103results about How to "Good suppression characteristics" patented technology

Disclosed are branched polyphosphonates produced via a superior transesterification process, and methods related thereto. These branched polyphosphonates exhibit a unique and advantageous combination of properties, such as outstanding fire resistance, improved heat stability, improved toughness, and superior processing characteristics. Also disclosed are polymer compositions that comprise these branched polyphosphonates and at least one other polymer, wherein the resulting polymer compositions exhibit flame retardant properties. Further disclosed are articles of manufacture produced from these polymers, such as fibers, films, coated substrates, moldings, foams, fiber-reinforced articles, or any combination thereof; these articles may be coated with a moisture barrier to enhance their moisture resistance properties.

The object of the present invention is to provide a nonaqueous electrolyte secondary battery which has excellent balance of general performance with respect to performance including durability, capacity, resistance, and output characteristics. Provided is a nonaqueous electrolyte battery comprising a positive electrode and a negative electrode each being capable of occluding and releasing metal ions, and a nonaqueous electrolyte solution, wherein the nonaqueous electrolyte solution contains an electrolyte, a nonaqueous solvent, and at least one compound selected from the group consisting of a compound having a fluorosulfonyl structure (—SO₂F), a difluorophosphate, and an isocyanate compound, and wherein the negative electrode has a negative electrode active material containing metal particles capable of alloying with Li and graphite particles.

[Problem] To realize radio data communication with high frequency efficiency and make all mobile station apparatus existing within a cell perform radio data communication without being affected by the deteriorated propagation path characteristics.

[Means for Solution] A base station apparatus (1) transmitting radio signals using a multicarrier modulation system includes a time manager (12) for obtaining time information to manage it; a transmission power setting section (11) for setting to some subcarriers among all subcarriers a first transmission power which enables the radio signals to reach all areas within a cell; a transmitter (2b, 4, 8, 9, and 10) for transmitting the radio signals using the subcarriers to which the first transmission power is allocated; and the transmission power setting section (11) changes at a certain time interval, subcarriers to which the first transmission power is set based on the obtained time information.

A drum head is broken down into a head body, which in turn is broken down into a solid portion and an accumulating portion, and a rigid base plate; the solid portion offers a beaten surface to a drummer, and the accumulating portion or an array of pillars and the base plate form in combination a locally vibratory portion; when a drummer strikes the beaten surface with a stick, the solid portion caves in for accumulating a part of the impact load, and gives rise to resilient deformation of the pillars beneath the cave so that another part of the impact load is accumulated in the deformed pillars as the elastic strain energy; the elastic strain energy is released through the local vibrations of the pillars, and the vibration energy is transmitted to a small amount of the air therearound so that the noise is faint.

The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

A high-frequency switch module includes a switch IC, a phase adjustment circuit, and a filter circuit. The phase adjustment circuit, which includes an inductor and capacitors, includes a π-type circuit in which the inductor is connected in series between an individual terminal and the filter circuit. The filter circuit is an LC parallel resonant circuit including a filter inductor and a filter capacitor. A distortion second harmonic signal from the individual terminal of the switch IC is reflected by the filter circuit through the phase adjustment circuit and returns to the switch IC through the phase adjustment circuit. This distortion second harmonic signal, whose phase is adjusted by the phase adjustment circuit, is cancelled out by a distortion second harmonic signal output to a common terminal of the switch IC.

A method for manufacturing an artificial leather comprises the following steps. First, ultramicrofiber-forming fibers having an islands-in-sea type cross-sectional configuration are formed by blend spinning or conjugate spinning. Secondly, a porous reinforcement sheet of low compactness is formed from polyester, polyurethane or polyolefin by spunbonding, meltblowing or calendering. Next, the ultramicrofibers are entangled with the reinforcement sheet by needle punching or spunlace to form the complex reinforced ultramicrofiber nonwoven fabric. The nonwoven is impregnated or coated with an elastomer resin composition, and then subjected to a coagulating process, a washing process, a drying process and a removing process to produce a semi-product leather. Finally, the semi-product leather is then processed to produce the artificial leather.

The invention discloses an antibacterial natural latex product based on a quaternary ammonium salt antibacterial agent and a preparation technology of the antibacterial natural latex product, and belongs to the technical field of latex materials. The antibacterial natural latex product is prepared from the following components by weight: 90 to 100 parts of natural latex, 1 to 9 parts of sulfur, 1 to 5 parts of a vulcanization accelerator, 1.5 to 2 parts of an anti-aging agent, 1 to 6 parts of zinc oxide, 0.5 to 2 parts of sodium fluosilicate, 1 to 3 parts of potassium castorate, 0.1 to 2 parts of potassium oleate, 0.5 to 1 part of potassium permanganate and 0.1 to 3 parts of the quaternary ammonium salt antibacterial agent. The antibacterial natural latex product is based on the antibacterial characteristic of a low-concentration quaternary ammonium salt compound. The adopted quaternary ammonium salt compound has the advantage of stable performance, and the compound is tightly combined with latex polymer molecules and cannot permeate the skin of people or an animal by changing the physicochemical property of material surface. The latex product prepared in the invention has the advantages of high antibacterial property, hygiene, high practicability and the like, and has a broad market prospect.

The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.

To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.

An intravascular catheter system for properly implanting a stent in a body lumen generally comprising a catheter having an elongated shaft with an inflatable balloon formed of compliant material and a stent mounted on the working length of the balloon. The balloon material is compliant within the working range of the balloon to provide substantial radial expansion. The wingless radially expansive balloon expands in a uniform manner, thereby producing uniform expansion and implantation of the stent. Another embodiment is directed to a balloon catheter, having a semi-compliant balloon or a noncompliant balloon formed at least in part of a block copolymer.

The present invention discloses lactobacillus rhamnosus, named lactobacillus rhamnosus HCS01-003. The strain is preserved on August 14, 2018 in the "China General Microbiological Culture Collection Center", and the preservation number is CGMCC No.16257. The invention also discloses an application of the strain used as an additive lactobacillus rhamnosus lyophilized powder which has strong anti-digestive tract anti-environment ability and good bacteriostatic property in preparing foods, health foods or pharmaceutical compositions. The invention further discloses an application of the strain used as a food additive lactobacillus rhamnosus lyophilized powder which has strong anti-digestive tract anti-environment ability and good bacteriostatic property in preparing infant foods.

A method for making carbon nanotube precious metal nanoparticles composite includes the following steps. A solution dissolving precious metal ions is provided. A water soluble polymer is provided and dissolved in water to form a solution of the soluble polymer. The solution of the precious metal ions is added into the solution of the soluble polymer to form a first mixture. A solution of carbon nanotubes is provided and added in the first mixture to form a second mixture. The second mixture is irradiated via radiation, the radiation have a wave length less than 450 nm.

An object of the present invention is to provide a thin biaxially oriented film excellent in dimensional stability against humidity change, as well as a magnetic recording medium and a film capacitor using the same. The present invention provides a single layered or laminated biaxially oriented film comprising an aromatic polyester (a) and a polyolefin (b) having a melting point of from 230 to 280° C., wherein the ratio of the polyolefin (b) is from 2 to 60% based on the entire weight of the film, and the film thickness is from 1 to 10 μm.

The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

A method of winding a glass ribbon (10), including: winding an interleaving material (20) and the glass ribbon together to produce a roll (40); and tensioning the interleaving material so as to control a roll inter-layer pressure. By controlling the roll inter-layer pressure, the roll can be formed with straight side walls. The tension in the interleaving material can be controlled so as to be greater than 0 and ≦0.25 pounds per linear inch of width of interleaving material. Also, there is provided an apparatus for winding glass ribbon together with interleaving material into a roll. The apparatus includes: an interleaving material supply path; a glass ribbon supply path; a roll winding mechanism (46); and a means (26) for applying tension to interleaving material traveling along the interleaving material supply path, as the interleaving material is wound into roll (40), so as to produce a pressure between the layers of the roll.

The flame retardant polycarbonate resin composition of the present invention includes (A) a polycarbonate resin, (B) a rubber-modified vinyl-based graft copolymer, (C) a metal salt of sulfonic acid, and (D) an anti-drip agent including a fluorinated terpolymer. The polycarbonate resin composition of the present invention can have excellent flame retardancy, heat resistance, and mechanical strength, well-balanced mechanical properties such as impact resistance, heat resistance, and fine workability, and an excellent appearance characteristic. Therefore, it can be useful for fabrication of molded products such as electric household appliances, office appliances, electrical and electronic devices, and internal parts thereof.

The present invention provides a method and system for mitigating fading and/or poor reception at a receiver. The receiver includes configurations each of which can provide different reception characteristics. The receiver evaluates the reception quality of the radio signal with the antenna in a first configuration and with the antenna in at least a second configuration and selects the antenna configuration that has the best evaluated reception for use until a subsequent iteration, when the process is repeated. The antenna configurations can correspond to configurations wherein reception is favored in different directions or to configurations wherein different antennas are selected, each antenna being spaced from each other antenna. The method can also improve the reception of a signal transmitted by selecting an antenna configuration for transmissions which provides improved reception quality at the destination receiver.

An electrodynamic transducer includes a frame and contains at least one electric coil which is placed in a static magnetic field and which can move about a rest position in a vertical free space. The coil(s) is wound around and fixed to a mandrel and a return member is used to return the coil-bearing mandrel to the rest position in the absence of an external bias, the straight cylinder defining an inner volume and an outer volume. The magnetic field is produced by outer and inner magnetic structures which each comprise at least one fixed permanent magnet in the form of a ring. The motor does not contain any ferromagnetic or magnetic part between the outer volume and the inner volume. At least the part of the frame that is used to fix the magnets is made from a non-ferromagnetic and non-magnetic material.

To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.

The optical film for protecting a polarizer of the present invention contains a mixture containing a polypropylene resin containing a propylene copolymer, and 2-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol.

An optical film for protecting a polarizer is provided that has an ultraviolet ray absorbing function and is excellent in optical characteristics.

A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode.

A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.