178results about How to "Improve characteristic" patented technology

Described within are systems and methods for disambiguating entities, by generating entity profiles and extracting information from multiple documents to generate a set of entity profiles, determining equivalence within the set of entity profiles using similarity matching algorithms, and integrating the information in the correlated entity profiles. Additionally, described within are systems and methods for representing entities in a document in a Resource Description Framework and leveraging the features to determine the similarity between a plurality of entities. An entity may include a person, place, location, or other entity type.

An atomic layer deposition apparatus, including: a chamber with an internal volume; a fixture assembly to hold a substrate within the internal volume of the chamber; a plurality of gas injection ports to facilitate the introduction of gas; at least one precursor gas arrangement to introduce precursor gas into the internal volume; and at least one inactive gas dispersion arrangement to introduce inactive gas into the internal volume. The inactive gas dispersion arrangement is in the form of a primary dispersion member configured to concentrically focus the precursor gas towards a surface of the substrate. A modeling system for an atomic layer deposition apparatus is also disclosed.

A disposable absorbent article is provided which includes a substantially liquid-impermeable, stretchable outer cover, a liquid permeable, stretchable top surface, and an absorbent body located between the outer cover and the top surface. The stretchable top surface can further include a first zone and a second zone. The stretchable outer cover can be configured to provide a first level of elongation when subjected to a tensile force of 100 gmf per inch (per 2.54 cm) of width according to the Material Elongation and Deformation Tensile Test set forth herein, while the first zone provides a second level of elongation that is less than the first level of elongation.

According to the invention it is disclosed an absorbent pad (1) comprising a liquid-impervious back sheet (2), a plurality of bodies (3) of liquid-absorbent material disposed on one surface of the back sheet (2), and a liquid-pervious cover sheet (4) covering said bodies (3) of absorbent material and secured to the back sheet (2) along channels (7) which separate said bodies (3) of absorbent material. The channels (7) progresses in a channel-pattern in which three channels (7), meeting in a joint, form respective edges (6) of said whole bodies (3) and said channels (7) being substantially free from absorbent material. A method for the manufacturing of such absorbent pad (1) is also disclosed.

[Object] To provide a manufacturing method that can easily enhance a reversed domain nucleation magnetic field of a magnetic recording layer in a perpendicular magnetic recording medium having, over a substrate, a soft magnetic layer, the magnetic recording layer having a granular structure, and a continuous layer having a high perpendicular magnetic anisotropy.[Solution] A perpendicular magnetic recording medium manufacturing method according to this invention is characterized by including a soft magnetic layer forming step of forming a soft magnetic layer over a substrate, a magnetic recording layer forming step of forming a magnetic recording layer having a granular structure as an upper layer of the soft magnetic layer, a continuous layer forming step of forming a continuous layer having a perpendicular magnetic anisotropy as an upper layer or a lower layer of the magnetic recording layer, and a heating step of heating a medium, obtained by forming the continuous layer in the continuous layer forming step, for improving a value of a reversed domain nucleation magnetic field.

Embodiments of invention are directed to devices, and methods of forming them, that can be used for removal of small volumes of tissue from the body, as is required for biopsy procedures. The procedures may be of the image-guided or non image-guided type. The devices described herein are applicable to biopsy of many types of tissue, particularly soft tissue. Applications include biopsy of the intestines, stomach, breast, pancreas, lung, liver, brain, skin, prostate, thyroid, heart, and other organs and tissues. Embodiments are directed to devices formed from a plurality of adhered layers of deposited materials.

An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode.

An organic EL display panel having a polymer organic EL layer with a uniform thickness is provided. The organic EL display panel includes a substrate, anode electrodes set on the substrate; a hole transport layer provided on the substrate on which the anode electrodes are set; banks provided in lines on the hole transport layer to define line-state pixel regions; an interlayer set in a line in the pixel region; a polymer organic EL layer set in a line on the interlayer in the pixel region; and a cathode electrode provided on the polymer organic EL layer.

An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.

Provided is a thin film semiconductor device such as an organic light-emitting display which includes a thin film transistor (TFT) having a lightly doped region. The thin film semiconductor includes a substrate, a first active pattern, a first lower conductive pattern, and a first upper conductive pattern. The first active pattern is disposed on the substrate and includes a channel region, a lightly doped region, and a heavily doped region. The first lower conductive pattern is disposed on the first active pattern and covers the channel region. The first upper conductive pattern is disposed on the first lower conductive pattern and covers the channel region and the lightly doped region.

A contact interconnect structure including the method of providing a semiconductor substrate including CMOS devices including active contact regions; forming a first set of dielectric layers to form a first thickness for etching a first set of openings through a thickness thereof including a bottom portion having a maximum width of less than about 70 nanometers; etching the first set of openings to contact active contact regions; filling the first set of openings with a first metal; forming a second set of dielectric layers to form a second thickness for etching a second set of openings through the second thickness comprising a bottom portion having a maximum width of less than about 70 nanometers; etching the second set of openings to provide electrical communication with the first set of openings; and, filling the second set of openings with a second metal to form contact interconnects.

Positive electrode active material particles for lithium ion secondary batteries include: a core particle including a first olivine-structured, lithium-containing phosphate compound which includes Fe and / or Mn and Li; and a shell layer attached to the surface of the core particle. The shell layer includes a second olivine-structured, lithium-containing phosphate compound which includes Fe and / or Mn and Li. At least the core particle includes a phosphorous compound represented by the formula (1): MemPnOp, where Me is Fe and / or Mn, 0<m≦3, 0<n≦3, and 0≦p≦5; a content C1 of the phosphorous compound in the core particle is 0.5 to 3 mol %; and when the shell layer includes the phosphorous compound represented by the formula (1), a content C2 of the phosphorous compound in the shell layer is smaller than the C1.

Methods of producing atomized intermetallic aluminide powders with a controlled oxygen content, and articles made from the powders by powder metallurgical techniques are disclosed. Gas atomized intermetallic aluminide powders can be oxidized to increase their oxygen content. Water atomized intermetallic aluminide powders can be milled to change their size, shape and / or oxygen content. Blends or mixtures of modified gas and water atomized intermetallic aluminide powders can be processed into articles by powder metallurgical techniques.

A sealed nonaqueous electrolyte secondary battery having a case which is deformed when the inner pressure is increased is characterized in that a material capable of occluding and releasing lithium is used as a negative electrode material, and a mixture of a lithium transition metal composite oxide containing Ni and Mn as transition metals and having a layered structure and a lithium cobaltate is used as a positive electrode material.

A radio frequency switching circuit having improved input / output power characteristics is provided. The circuit includes basic switching sections each including a plurality of FETs 13a-13d, 14a-14d, 11a-11d or 12a-12d connected in series. The basic switching sections are respectively provided between an input / output terminal 1 and the ground, between an input / output terminal 3 and the ground, between the input terminals 1 and 2, and between the input terminals 2 and 3. The circuit also includes a plurality of resistors 43a-43d, 44a-44d, 41a-41d and 42a-42d, each having one terminal connected to a drain electrode of a corresponding FET and the other terminal connected to a source electrode of the corresponding FET. A resistor connected between the drain and source electrodes of an FET, among the FETs included in a basic switching section in an OFF state, closer to the input / output terminal to which a signal is inputted has a smaller resistance value.

A gas sensor with a high temperature electrical connector is provided. The electrical connector incorporates a ceramic connector body having a pair of opposing ceramic body portions which each house a plurality of conductive terminals. The body portions are in pivoting engagement and fixed in a connector body retainer which also enables their pivoting, hinged movement. The pivoting engagement permits the ceramic body portions and terminals to hinge open to receive a gas sensor with a low insertion force and a hinge closed to provide the desired contact force.

A semiconductor memory device includes a memory cell having an FET of a floating body type, and a capacitor for storing a data charge; a bit line to which the source or the drain of the FET is connected; a precharging device for performing precharge control so that the bit line has a predetermined precharge voltage; a sense amplifier for amplifying and storing the potential of the bit line, which is set in accordance with the data charge read from the memory cell; a switching device, provided between the bit line and the sense amplifier, for performing selective connection therebetween; and a control part for controlling the precharging device, the sense amplifier, and the switching device. Except for each period for performing data reading or writing, the control part makes the precharging device perform the precharge control and makes the switching device disconnect the bit line from the sense amplifier.

There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.

An anode active material with a high capacity capable of providing superior cycle characteristics and a battery using it are provided. An anode contains an anode active material capable of reacting with lithium. The anode active material contains at least tin, iron, and carbon as an element. The carbon content is from 11.9 wt % to 29.7 wt %, and the iron ratio to the total of tin and iron is from 26.4 wt % to 48.5 wt %. Thereby, while a high capacity is maintained, the cycle characteristics are improved.

A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface.

A semiconductor device having a junction FET having improved characteristics is provided. The semiconductor device has a junction FET as a main transistor and has a MISFET as a transistor for control. The junction FET has a first gate electrode, a first source electrode, and a first drain electrode. The MISFET has a second gate electrode, a second source electrode, and a second drain electrode. The MISFET is an n-channel type MISFET and has electric characteristics of an enhancement mode MISFET. The second gate electrode and the second drain electrode of the MISFET are connected to each other by short-circuiting. The first gate electrode of the junction FET and the second source electrode of the MISFET are connected to each other by short-circuiting.

The present invention provides a flash memory device having a high degree of integration and high performance. The flash memory device has a double / triple gate structure where a channel is formed in a wall-shaped body. The flash memory device has no source / drain regions. In addition, although the flash memory device has the source / drain regions, the source / drain region are formed not to be overlapped with a control electrode. Accordingly, an inversion layer is induced by a fringing field generated from the control electrode, so that cell devices can be electrically connected to each other. The flash memory device includes a charge storage node for storing charges formed under the control electrode, so that miniaturization characteristics of cell device can be improved. According to the present invention, there is proposed a new device capable of improving the miniaturization characteristics of a MOS-based flash memory device and increasing memory capacity.

The invention is related to methods and compositions for improving feeding and / or production characteristics in animals. In an embodiment, the invention includes a method for improving feeding characteristics of an animal including administering a first composition comprising an effective amount of saponins to the animal, and administering a second composition comprising an effective amount of a preservative to the animal. In an embodiment, the invention includes a method for improving production characteristics of an animal including administering a first composition comprising an effective amount of saponins to the animal, and administering a second composition comprising an effective amount of a preservative to the animal.

The present invention provides an LDO regulator having a greatly improved overshoot characteristic through the use of an output voltage based feedback loop. More specifically, in the invention, one or more resistors in the divider network in a conventional LDO regulator is replaced with a variable resistor. By varying the resistance of the variable resistor as a function of the output voltage of the LDO regulator, the closed-loop gain of the LDO amplifier may be modulated in such a way as to reduce overshoot in the output voltage of the LDO regulator. In particular, the targeted final output voltage value may be arbitrarily lowered for a predetermined period of time, so that the LDO regulator output may rapidly reach a steady state voltage that is very close to the final desired regulating value without exceeding the final desired regulating value during regulator startup.

An article coated with an electrolytically deposited bio-compatible composite layer useful as an internal prosthetic device is disclosed. The bio-compatible composite coating that is electrolytically deposited onto the article comprises hydroxyapatite and chitosan. The introduction of chitosan into the crystal matrix of brushite / hydroxyapatite significantly improves the adhesive and chemical and mechanical stability properties of the coating.

A multicylinder internal combustion engine is provided with a plurality of cylinders sharing a single crankshaft. The combustion characteristics in the respective cylinders is improved by taking out part of combustion (expansion) gas produced in one of the cylinders at an earlier stage of the explosion (expansion) stroke, and then introducing the gas into another one of the cylinders in the suction or compression stroke.

Pharmaceutical compositions comprising aprepitant, wherein aprepitant solubility in aqueous media is enhanced.

A connector having a connector main body including a base and a plurality of signal terminals and a plurality of ground terminals both fixed to the base; and a cable positioning member made of conductors for positioning a plurality of cables relative to the connector main body, the cable positioning member including a plurality of securing portions at which the cable positioning member is secured to the ground terminals, and a cable holding portion including a plurality of outer conductor holding portions adapted to hold an outer conductor protruding from the end of each cable and a plurality of insulating layer holding portions adapted to hold an insulating layer protruding from the end of each cable. The cable positioning member is electrically contacted to the ground terminals at the securing portions and to the outer conductors at the outer conductor holding portions.