8results about How to "Improve power characteristics" patented technology

The invention relates to a composite diaphragm. The composite diaphragm comprises a porous base material; and a ceramic layer formed on one surface or both surfaces of the porous substrate and containing inorganic particles and a binder, in which the binder contains polyacrylamide and carboxymethyl cellulose having a weight average molecular weight of 180000 g / mol or more and a degree of substitution of 0.6 to 1.2 in a weight ratio of 60 to 90: 40 to 10, the composite diaphragm can simultaneously satisfy excellent mechanical stability, thermal stability and ionic conduction characteristics.

The application discloses an ultra-wideband GaAs amplitude-phase control transceiver front-end chip, which is applied to the field of phased array radars, and aims at the fact that high-low pass type phase shifters adopted in existing transceiver front-end chips are only applicable to low-frequency phase shift units, and are limited by the problem of filter order; the application proposes a novel phase shift structure based on a magnetic coupling all-pass network and an active complementary dual-mode amplification circuit, the structure can realize a great expansion of available frequency on the premise of ensuring phase shift precision, and a 180-degree phase shift network based on an active structure can effectively provide transmission gain, reduce the number of used link amplifiers, further reduce the noise coefficient of a receiving link and assist in improving the power characteristics of a transmitting link. The application of the technology helps to realize good phase shift precision, input and output return loss and lower phase shift error of the chip in an ultra-wideband range of 2-18GHz.

A positive electrode active material for a lithium secondary battery according to an embodiment of the present invention contains lithium metal oxide particles containing cobalt and aluminum. The lithium metal oxide particles have a secondary particle form in which primary particles are aggregated, and the ratio of the weight of aluminum contained in the primary particles to the weight of cobalt satisfies a predetermined relational expression. According to the present invention, a positive electrode having improved structural stability and high-temperature stability and having high energy density and high power characteristics can be realized.

The invention provides a printed circuit board. The printed circuit board includes a first wiring portion having a first insulating body and a plurality of first wiring layers. An uppermost first wiring layer of the plurality of first wiring layers is embedded on an upper side of the first insulating body, and at least a portion of an upper surface of the uppermost first wiring layer is exposed from an upper surface of the insulating body. The second wiring portion is disposed below the first wiring portion and includes a second insulating body and a plurality of second wiring layers. An electronic component is embedded in the first insulating body and partially exposed. The plurality of first wiring layers and the plurality of second wiring layers are electrically connected to each other. A minimum pitch of the wirings included in each of the plurality of first wiring layers is smaller than a minimum pitch of the wirings included in each of the plurality of second wiring layers.

This invention relates to a lead-acid battery, belonging to the field of lead-acid battery technology, to solve the problems of uneven current distribution and short cycle life of existing lead-acid batteries. The lead-acid battery includes a single cell, which comprises multiple positive and negative plates arranged in alternating layers. Each positive and negative plate includes a frame and tabs. The frame includes an upper frame, a lower frame, a left frame, and a right frame. Each positive and negative plate has a first tab and a second tab, symmetrically arranged along the length of the upper frame. The plane containing the first and second tabs is parallel to the plate surface. In the positive plate, the distance between the first and second tabs is d1; in the negative plate, the distance between the first and second tabs is d2, where d1 and d2 are different. In the positive plate, the first and second tabs are of the same size. The lead-acid battery of this invention has a long service life.

The method of preparing a negative active material for a secondary battery according to an exemplary embodiment of the present application includes adding a negative active material powder and a first binder powder to a mixer, adding a first solvent and performing first mixing to form a primary negative electrode composition, and after forming the primary negative electrode composition, adding a second binder powder to the mixer and performing second mixing to form a negative electrode composition.

The invention relates to a composite diaphragm. The composite diaphragm comprises a porous base material; and a ceramic layer which is formed on one surface or both surfaces of the porous substrate, and which contains inorganic particles and a binder, in which the average particle diameter (D50) of the inorganic particles is 0.20 [mu] m to 0.40 [mu] m, and in a particle size distribution diagram of the inorganic particles, the particle size distribution diagram of the inorganic particles is greater than the particle size distribution diagram of the inorganic particles, the particle size distribution diagram of the inorganic particles is greater than the particle size distribution diagram of the inorganic particles. The ratio (A / B) of the area (A) on the small particle diameter side to the area (B) on the large particle diameter side, based on the maximum peak, is 1.05 or more, and the composite separator can simultaneously satisfy excellent mechanical stability, thermal stability, and ion conductivity characteristics.

This invention discloses a nitride epitaxial structure, its preparation method, and its applications. The nitride epitaxial structure includes a substrate with atomic steps, on which a nucleation layer with a striped pattern is grown; and on the striped patterned nucleation layer, a transition layer, a first semiconductor layer, and a second semiconductor layer epitaxial structure are grown. The nitride epitaxial structure of this invention achieves a high-crystal-quality GaN epitaxial layer within an ultrathin thickness range. This epitaxial layer possesses the characteristics of ultrathinness and high crystal quality, which can effectively improve the heat dissipation characteristics, voltage withstand characteristics, and trapping effects of device structures. Especially when applied to high-frequency, high-power devices, the improvement in heat dissipation, voltage withstand, and trapping effects helps to enhance the power characteristics and linearity of the device.