A gate wire including a gate line, a gate pad and a gate
electrode is formed on a substrate. A gate insulating layer, a
semiconductor layer, a doped
amorphous silicon layer and a conductive layer are deposited in sequence, and then a
photoresist film pattern is formed thereon. The
photoresist film pattern includes a first portion positioned between a source
electrode and a drain
electrode, a second portion thicker than the first portion, and the third portion with no
photoresist. A data wire including a data line, a data pad, a source electrode, a drain electrode and a conductor pattern for storage
capacitor, an
ohmic contact layer pattern and a
semiconductor pattern are formed by
etching the conductive layer, the doped
amorphous silicon layer and the
semiconductor layer using the photoresist film pattern. A plurality of color filters of red, green and blue having apertures exposing part of the drain electrode are formed thereon. A
passivation layer made of acryl-based organic material having excellent planarization characteristic is formed thereon. A pixel electrode, an auxiliary gate pad and an auxiliary data pad connected to the drain electrode, the gate pad and the data pad via contact holes, respectively, are formed on the
passivation layer. The
contact hole exposing the drain electrode is located within the aperture.