64results about How to "Increase the effective luminous area" patented technology

The invention provides a display panel and a display device. The display panel comprises a first display area and a second display area, wherein the first display area comprises display units distributed in arrays; each display unit comprises a first pixel unit and a light transmitting unit; the second display area comprises second pixel units distributed in arrays; the light emitting area of eachfirst pixel unit is larger than that of each second pixel unit. Overall luminance of the first display area or a transparent display area is improved by increasing an effective light emitting area ofthe first display area, so that luminance difference between the transparent area and the normal display area is reduced.

An optical module includes a point light source device and an optical lens. The point light source device generates light. The optical lens includes an inner curved surface and an outer curved surface. The inner curved surface has a first roughly ellipsoidal shape having a first major axis and a first minor axis that is substantially perpendicular to the first major axis. The outer curved surface has a second roughly ellipsoidal shape having a second major axis that is substantially perpendicular to the first axis and the second minor axis that is substantially perpendicular to the second major axis. The light generated by the point light source device enters the optical lens through the inner curved surface and exits from the optical lens through the outer curved surface. Therefore, the number of optical modules used in a display device may be reduced to lower manufacturing cost thereof.

The invention relates to an LED chip and a processing technology thereof, and belongs to the technical field of manufacturing of photoelectron devices. The technology comprises the following steps: a P-type nitride layer on an epitaxial wafer substrate is etched to expose an N-type nitride layer; a current blocking layer is manufactured under a P-type electrode bonding pad area, an insulating substance under the P-type electrode bonding pad area, an insulating substance in direct contact with an N-type electrode bonding pad, and an expanding electrode and the P-type nitride layer, and an insulating substance on the side walls of a quantum well and P-type nitride are reserved through etching; an ITO film deposits on the surface of the substrate, a current expanding layer and alloy are manufactured through photoetching, a metal layer is formed on the surface of the substrate through vapor deposition, and after a part of the metal layer is stripped, a P-type electrode bonding pad, an N-type electrode bonding pad and an N metal expanding electrode are formed. Both the P-type electrode bonding pad and the N-type electrode bonding pad of the product are positioned on a P-type light-emitting surface and are the same in height; a part or all of the N metal expanding electrode is in direct contact with the N-type nitride layer. The invention has the advantages that the routing is convenient, the light-emitting efficiency and the brightness of the LED chip on the nitride substrate can be improved.

The invention provides an electroluminescent device with high light emitting efficiency, which comprises a transparent substrate, a light scattering layer positioned on the transparent substrate, a surface smooth layer positioned on the light scattering layer and an electroluminescent layer positioned on the surface smooth layer. The electroluminescent device has the following technical effects: 1, light scattering particles are exposed out of an adhesive, each of the light scattering layer and the surface smooth layer is provided with a waved surface, light emitted from the light emitting layer is directly scattered by the waved light scattering particles after passing through the waved surface smooth layer with a high refractive index, parts of light rays which are less than a critical angle are directly emitted out, the light rays which are greater than or equal to the critical angle are reflected back, are reflected again by a reflection electrode layer, passes through the surface smooth layer and are scattered again, another part of light is extracted, and extraction is repeatedly carried out, so that the light extraction efficiency is greatly improved, and the waved surface of the light scattering layer increases an effective light emitting area; 2, the electroluminescent device adopts is simple in preparation process and facilitates scale mass production.

The invention discloses an OLED (Organic Light Emitting Diode) lighting source, which is of a polygon structure, and comprises a base plate, and an electrode lead area and a lighting area located on the base plate. The lighting area comprises a first electrode, an organic function layer and a second electrode; one side of the lighting area is adjacent to the electrode lead area; auxiliary electrodes are respectively arranged on edges of other sides, are mutually connected, and are communicated with the electrode lead area. According to the OLED lighting source, only the auxiliary electrodes connected with the electrode lead area are arranged on the edges of the lighting area, and under the condition of equivalent uniformity of luminance, the effective lighting area can be increased, and the lighting efficiency is improved.

The invention discloses an LED chip structure and a preparation method thereof. The LED chip structure comprises a substrate, and an epitaxial layer positioned on the substrate; the epitaxial layer comprises a first area layer, a quantum well active layer and a second area layer. The LED chip structure further comprises a slot which extends from the second area layer to the second area layer or extending into the first area layer, a first electrode which is formed in the slot and in contact with the first area layer, and a second electrode which is formed on the second area layer. According to the LED chip structure, the area of an etching are of an LED chip can be reduced, the effective lighting area of the LED chip can be increased, and as a result, the lighting efficiency is increased.

An external electrode fluorescent lamp has external electrodes at opposite ends. The portions provided with the external electrodes are bent so that their axes are orthogonal to the axis of a light emitting sections. A conventional external electrode fluorescent lamp is not bent in its portions provided with external electrodes. Since the external electrodes of the external electrodes fluorescent lamps serve concurrently as holding sections for the fluorescent lamps the axial length is made greater than the outer diameter so as to provide sufficient strength. The width of the frame section of the fluorescent lamp of the invention when mounted on a backlight unit is smaller than the width of the frame section of conventional fluorescent lamp. Therefore, the effective light emitting area of the backlight unit can be enlarged.

The invention discloses a production method of a free nanometer columnar array for improving luminescence of an OLED device. The method comprises the steps that firstly, an ITO substrate is cleaned byusing a laboratory ITO conductive glass cleaning agent with a certain concentration and an ultraviolet light cleaning machine in sequence; then even PMMA/PS thin film is prepared by using a common technology, the ITO substrate with the PMMA/PS thin film is annealed, and a free nanometer columnar array is obtained; finally, an organic layer and an electrode layer of the OLED device are subjected to vapor deposition in sequence, and the OLED device is obtained after being packaged. According to the production method, the phase separation process of the PMMA/PS thin film is regulated and controlled, and a free nanometer columnar array structure is prepared and obtained on the ITO substrate and is applied to the OLED device; the manufacturing technology is simple, the cost is low, meanwhile,the surface area of the thin film is effectively improved, and the effective luminescence area of the device is increased; meanwhile, the light emergence angle is changed, the total reflection loss isreduced, the light emergence rate is improved, and luminescence of the OLED device is improved.

The invention relates to a display substrate, a manufacturing method thereof and a displaying device comprising the display substrate. A pixel unit in the display substrate comprises a first electrode and a first connecting part which is connected with the first electrode. The first connecting part is connected with a first connecting wire through a first via hole. The first connecting line of the pixel unit is connected with the first connecting line of another pixel unit above the pixel unit and the first connecting line of another pixel unit below the pixel unit. According to the technical solution of the display substrate, the first connecting line is connected with the first connecting part through the first via hole and furthermore is connected with a common electrode. Because the first connecting line is also used for connecting with the first connecting lines of another pixel unit above the pixel unit and another pixel unit below the pixel unit, thereby connecting with the common electrode in the longitudinal pixel unit. Compared with a manner of connecting with the common electrode in the longitudinal pixel unit through two via holes and two connecting lines in prior art, the manner of the display substrate is advantageous in that only one via hole is required; and relatively small reserved area for the via hole on the pixel electrode is realized, thereby enlarging an effective light emitting area and furthermore increasing an aperture ratio.

The invention provides an AMOLED pixel drive circuit and a driving method thereof. The pixel drive circuit with a 6T1C structure is employed with a specific drive time sequence, so that threshold voltages for driving thin film transistors can be effectively compensated for and currents flowing through organic light emitting diodes are stable, the light emitting brightness of the organic light emitting diodes is uniform and an image display effect is improved; through the cooperation of N-type thin film transistors and P-type thin film transistors, the numbers of thin film transistors and scanning control signals are reduced, the structure of the pixel drive circuit is simplified and an effective light emitting area is increased.

The invention discloses a vertical high voltage light emitting diode chip and a manufacturing method thereof. With the design of the vertical high voltage light emitting diode chip, the back surface electrode in a first chip region is electrically connected with a conductive substrate through a hole and a bonding layer and the back surface electrode is exposed without etching in the first chip region, thereby ensuring that the effective light emitting area of the vertical high voltage light emitting diode chip is large; besides, the back surface electrode of the first chip region does not needto be wired, thereby saving cost and improving reliability; in addition, the current spreading of each chip region is vertical, and the back surface electrode of the first chip region and the front surface electrode of the Nth chip region form a vertical structure so that the current spreading of the vertical high voltage light emitting diode chip is good, and the current resistance ability can be improved by avoiding current congestion; furthermore, the vertical high voltage light emitting diode chip has a better light type and meets the Lambert distribution and is easier to distribute light.

The invention provides a display panel and a display device. The display panel includes a film transistor array layer, a first organic insulating layer, a plurality of first electrodes, a second organic insulating layer, an organic light emitting layer and a second electrode, wherein the first electrode, the organic light emitting layer and the second electrode form an organic electroluminescent device, a first interval is formed between first electrodes included in adjacent sub-pixels with the same color, the second organic insulating layer corresponding to the first interval has a first height, a second interval is formed between the first electrodes included in the adjacent sub-pixels with different colors, the second organic insulating layer corresponding to the second interval has a second height, and the second height is greater than the first height. The display panel is advantaged in that manufacturing difficulty can be reduced, printing precision and the printing speed are improved, and film thickness uniformity of the organic light emitting layer is improved.

The invention discloses an alternating current (AC) light-emitting device. The device comprises a substrate and a plurality of light-emitting units, wherein the light-emitting units are arranged on the substrate, each light-emitting unit contains a first semiconductor layer, a luminous layer and a second semiconductor layer from bottom to top, at least one first electrode and second electrode are separately arranged on the first semiconductor layer and the second semiconductor layer, and each light-emitting unit is coupled with at least one adjacent light-emitting unit through a wire. As the light-emitting device has a plurality of light-emitting units and each light-emitting unit is coupled with at least one adjacent light-emitting unit through a wire, the problem that as one wire is broken, the AC light-emitting device is open can be avoided.

An organic EL display in which the film thickness of an organic emissive layer is made uniform so as to increase the effective light emission area. An anode and a common cathode are formed for each pixel on the organic EL display. Switching by thin-film transistors causes current to flow between the anode and the cathode so that the organic EL element emits light. The organic EL element comprises a hole transport layer, the organic emissive layer, and an electron transport layer. Among a plurality of pixels disposed in a matrix configuration, the organic emissive layer is formed in common with adjacent pixels of the same color. Forming the organic emissive layer in common can prevent a decrease in the film thickness of the organic emissive layer at the edges of the shadow mask during vapor deposition and result in a uniform film thickness of the organic emissive layer.

The invention discloses an Integrated LED (Light Emitted Diode) chip and a manufacturing method thereof. The method comprises the following steps of: S1, growing an epitaxial layer on a substrate to form a wafer matrix; S2, on the wafer matrix, forming an isolation groove for isolating adjacent mono-cells by laser cutting, wherein the bottom of the isolation groove stretches to the substrate of the wafer matrix; S3, removing a part of a second semiconductor layer and a emitting layer to enable a first semiconductor layer under the second semiconductor layer and the emitting layer to be exposed; S4, forming a transparent conductive film on the surface of the second semiconductor layer; S5, forming a passivation layer on a side wall and in the isolation groove, wherein the side wall formed by the superposition of the first semiconductor layer, the second semiconductor layer and the emitting layer; and S6, forming metal connecting wires among the mono-cells isolated by the isolation groove, so as to form the integrated LED chip. According to the Integrated LED (Light Emitted Diode) chip and the manufacturing method thereof disclosed by the invention, by forming the isolation groove by means of laser cutting, the manufacturing process is simplified, the production efficiency is improved, and the effective light-emitting area of the chip is increased.

The invention provides a vertical cavity surface emitting laser array and a manufacturing method and application thereof. The vertical cavity surface emitting laser array comprises at least two emitters, wherein each emitter comprises at least two emitting units, and a first conductive connection layer is arranged between the emitting units; and at least two insulating regions which are arranged between at least two emitters, wherein at least two emitters are connected in series. The vertical cavity surface emitting laser array can improve the light emitting area.

The invention provides an OLED device with high stability and a preparation method thereof, the device includes a substrate, a first electrode material layer disposed on the substrate, and isolation posts. The first electrode material layer is patterned to form a plurality of first electrode cells, a first patterned region is arranged between adjacent first electrode cells, the isolation posts areparallel to and spaced from one another, and are perpendicular to the direction of the first electrode cell. The device is characterized in that at least a portion of the isolation columns are in direct contact with the first electrode cells and/or the substrate. By not providing an insulating material layer under the isolation column, the stability of the screen body is improved, and the pixel opening rate is effectively increased.

The invention provides an organic light-emitting display panel, a manufacturing method thereof and an organic light-emitting display device, and the organic light-emitting display panel comprises a display region and a camera region. Each of the camera shooting area and the display area comprises a substrate and a plurality of pixel units formed on the substrate, and an organic light emitting diode of each pixel unit comprises a stacked structure formed by an anode, an organic light emitting layer and a cathode; in the camera shooting area, the stacked structure of at least one organic light-emitting diode is a curved surface structure or a wave structure, and the curved surface structure faces the substrate or is opposite to the substrate. According to the organic light-emitting display panel, the manufacturing method thereof and the organic light-emitting display device, the OLED device in the camera shooting area is designed to be of the curved surface structure or the wave structure, so that the effective light-emitting area is increased, the photoelectric performance and the brightness of the OLED device in the camera shooting area are improved, the parallax problem is solved, and the user experience is improved.