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Production of gallium nitride light emitting diode chip with small volume and hight brightness

A technology for light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of not involving small-volume high-brightness chip manufacturing technology, unable to realize small-volume chips, and no substantial innovation, etc. Uniform current distribution, increased luminous efficiency, and increased number of effects

Inactive Publication Date: 2006-05-31
DAUAN LUMEI OPTOELECTRONICS
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Problems solved by technology

[0003] At present, there are relevant reports on this technology in various journals and patent documents, such as: "A Method for Making the N Electrode of Gallium Nitride Light-Emitting Diode Chips" with the publication number CN1466227A of the Chinese invention patent; "" with the publication number CN1351383A "Manufacturing method of gallium nitride-based blue light-emitting diode chip"; publication number is CN1379489A "substrate processing method of high-brightness gallium nitride-based light-emitting diode epitaxial wafer"; all disclose the corresponding gallium nitride-based light-emitting diode chip Preparation of related technologies, but the technologies disclosed in the above-mentioned documents do not involve the manufacturing technology of small-volume high-brightness chips, that is, small chips. The small size of the chip makes the application field of the chip more limited

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  • Production of gallium nitride light emitting diode chip with small volume and hight brightness

Examples

Experimental program
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Embodiment Construction

[0024] The following is an example to illustrate the manufacturing process of the small chip:

[0025] To make a chip with an area of ​​0.275×0.275mm2, the P electrode is circular, φ=0.09mm; the N electrode is a water drop-shaped special geometric figure (see the attached drawing) φ=0.09mm, and the following steps are taken to realize it:

[0026] (1) Extended growth

[0027] Using sapphire as a substrate, growing an N-type AlGaN buffer layer, an N-type GaN layer, and a P-type GaN epitaxial layer by MOCVD, and growing a P+ layer doped with manganese (Mg) on ​​the P-type epitaxial layer;

[0028] (2) Evaporating transparent electrodes

[0029] Then using an electron beam evaporation table, under high vacuum for 10 -5 ~10 -8 , under the condition of an evaporation rate of 15 Å / sec; a thin Ni\Au layer is formed, which ensures uniform current spreading and provides high-quality ohmic contact;

[0030] (3) Etching steps

[0031] Using the reactive ion etching method, the mixed...

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Abstract

A process for preparing the small-size high-brightness GaN LED chip includes such steps as epitaxial growth, evaporating transparent electrode, etching to form step, passivating, preparing P and N electrodes, annealing, testing its parameters, grinding, cutting and classifying.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting diode chip, in particular to a method for manufacturing a small-volume, high-brightness gallium nitride light-emitting diode chip. Background technique [0002] Light-emitting diode (LED) is a light-emitting device that converts electrical energy into light energy. At present, the manufacturing technology of red, orange, yellow, and general green light-emitting diodes has matured. The third-generation semiconductor materials represented by gallium nitride, It has the characteristics of high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, and is currently the most advanced semiconductor material. [0003] At present, there are relevant reports on this technology in various periodicals and patent documents, such as: "A Method for Making the N Electrode ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 肖志国王省莲马欣荣陈向东
Owner DAUAN LUMEI OPTOELECTRONICS
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