The invention discloses a single-mode high-power high-brightness GaSb-based bragg reflection master oscillator power amplifier (MOPA) integrated semiconductor laser and a manufacturing method thereof. The bragg reflection MOPA integrated semiconductor device comprises a substrate, an epitaxy structure, a gain amplification region, a master oscillator region, a bragg reflection region and optical limiting grooves, wherein the epitaxy structure grows on the substrate and comprises an N-type lower contact layer, an N-type lower limiting layer, a lower waveguide layer, an active region, an upper waveguide region, a P-type upper limiting layer and a P-type upper contact layer from bottom to top; the gain amplification region is located on the front part, namely a light outlet part, of the semiconductor laser, and is in a conical structure which is formed by etching the P-type upper contact layer downwards; the master oscillator region is located at the rear part of the gain amplification region and is in a ridge waveguide structure which is formed by etching the P-type upper limiting layer downwards; the bragg reflection region is located at the rear part of the master oscillator region and is in a periodical bragg grating structure which is formed by etching the P-type upper limiting layer downwards; and the optical limiting grooves are symmetrically distributed in two sides of the ridge waveguide and are obliquely arranged together with the ridge waveguide.