The invention discloses a single-mode high-power high-brightness GaSb-based bragg reflection
master oscillator power
amplifier (MOPA) integrated
semiconductor laser and a manufacturing method thereof. The bragg reflection MOPA integrated
semiconductor device comprises a substrate, an
epitaxy structure, a
gain amplification region, a
master oscillator region, a bragg reflection region and
optical limiting grooves, wherein the
epitaxy structure grows on the substrate and comprises an N-type lower
contact layer, an N-type lower limiting layer, a lower
waveguide layer, an active region, an upper
waveguide region, a P-type upper limiting layer and a P-type upper
contact layer from bottom to top; the
gain amplification region is located on the front part, namely a light outlet part, of the
semiconductor laser, and is in a conical structure which is formed by
etching the P-type upper
contact layer downwards; the
master oscillator region is located at the rear part of the
gain amplification region and is in a
ridge waveguide structure which is formed by
etching the P-type upper limiting layer downwards; the bragg reflection region is located at the rear part of the master oscillator region and is in a periodical bragg
grating structure which is formed by
etching the P-type upper limiting layer downwards; and the
optical limiting grooves are symmetrically distributed in two sides of the
ridge waveguide and are obliquely arranged together with the
ridge waveguide.