Light-emitting diode and method of preparing the same

Abstract

The invention discloses a LED, which comprises: a sapphire substrate, a GaN buffer layer, an N / P-type GaN / ohmic contact layer, an InGaN / GaN quantum trap active layer, and a concentric P-type ohmic contact transparent electrode with grooves between near ring electrodes manufactured by dry etching. This invention makes even current injection, increases probability of side-surface light, reduces reflection angle, and thereby decreases greatly light energy loss.

Description

technical field [0001] The invention relates to a light emitting diode, in particular to a light emitting diode based on gallium nitride semiconductor material. The invention also relates to a preparation method of the light emitting diode. Background technique [0002] Semiconductor light-emitting diodes have a wide range of applications in the fields of full-color large-screen image display, optical storage, sign recognition, underwater and space communications, medical equipment, photoelectric integration, and military reconnaissance. In particular, gallium nitride-based blue, violet, and ultraviolet semiconductor light-emitting diodes can be used as the basic light source of white light tubes, and have the advantages of energy saving, greenness, and environmental protection. It has broad application prospects and huge market demand. [0003] Semiconductor light-emitting diodes inject current into the active layer located at the P-N junction, and emit light through the ...

AI Technical Summary

Problems solved by technology

Due to the staggered structure of its electrodes, if there is a slight deviation in the production, the staggered structure is not uniform and symmetrical, which will lead to insufficient current expansion, resulting in uneven light emission, and the light output area is small, and there is a limitation of total reflection angle, and the light output efficiency is low.

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