137results about How to "Improve light extraction rate" patented technology

A patterned color conversion film and a display device using the same are disclosed. The patterned color conversion film of the present invention comprises: a separator with plural openings; and plural pixel units disposed in the openings respectively, each pixel unit respectively comprising: a medium and scattering particles dispersed therein. Herein, at least one of the plural pixel units comprises quantum dots having the scattering particles sized of between 0.05 and 1 μm when a volume concentration of the quantum dots is in a range more than or equal to 5% and less than or equal to 80%, or having the scattering particles sized of between 0.2 and 2 μm when the volume concentration of the quantum dots is in a range less than 5% and more than or equal to 0%.

An organic light emitting diode display includes a display substrate including a plurality of organic light emitting diodes, a plurality of color filters on the plurality of organic light emitting diodes respectively corresponding thereto, and a plurality of light scattering particles dispersed in the plurality of color filters.

The invention relates to a patterning color conversion film and a display device applying the same. The patterning color conversion film comprises a separator and a plurality of pixel units. The separator is provided with a plurality of openings in a separating mode, the pixel units are arranged in the openings respectively. Each pixel unit comprises a substrate and a plurality of scattering particles which are scattered in the substrate, at least one pixel unit comprises a plurality of quantum dots, wherein the volume percentage concentration of the pixel unit which comprises the quantum dots is larger than or equal to 5V% and smaller than or equal to 80V%, and the particle diameters of the scattering particles are 0.05-1 micrometer; or when the volume percentage concentration is smaller than 5V% and larger than or equal to 0V%, the particle diameters of the scattering particles are 0.2-2 micrometers.

The present invention relates to an electroluminescence device based on a boron-containing organic compound, wherein a main body material comprises a first organic compound and a second organic compound, the difference between a singlet state energy level and a triplet state energy level of the first organic compound is not greater than 0.2 eV, the singlet energy level of the second organic compound is greater than the singlet energy level of the first organic compound by more than 0.1 eV, and the triplet energy level of the second organic compound is greater than the triplet energy level of the first organic compound by more than 0.1 eV; the first organic compound and the second organic compound have the different carrier transport characteristics, wherein an object material is the boron-containing organic compound, the singlet energy level of the object material is lower than that of the first organic compound, and the triplet energy level of the object material is lower than that ofthe first organic compound. An organic light-emitting device prepared by the method has the characteristics of high efficiency and long service life.

The invention provides an active organic light-emitting diode (OLED) display device and a manufacturing method thereof. The active OLED display device comprises a display area and a non-display area. The non-display area comprises a negative electrode power line, wherein an insulating layer is arranged on the negative electrode power line, a planarization layer further covers the insulating layer and extends to and covers the negative electrode power line, and a gradient included angle alpha formed by the planarization layer and the contact surface of the negative electrode power line is smaller than a gradient included angle beta formed by the insulating layer and the contact surface of the negative electrode power line, so transition is flatly and slowly formed from a negative electrode to the negative electrode power line, smoothness from the negative electrode to the contact area of the negative electrode power line is increased, and contact resistance is effectively reduced. The planarization layer covers a non-pixel area of a positive electrode, and the thickness of the planarization layer is larger than or equal to the sum of the thickness of the positive electrode, the thickness of an organic functional layer and the thickness of the negative electrode, so a pixel area can be protected against scratching, the rate of finished products of the display device is effectively guaranteed, a manufacturing process is simple, and the process is easy to achieve.

The invention provides an OLED display panel and a preparation method thereof. Each pixel opening area is provided with a first micro lens and a second micro lens; the first micro lens is positioned in the pixel opening area, is exposed of and seals the pixel opening area; the second micro lens and the first micro lens are arranged in an aligned manner; the second micro lens covers the first microlens and the pixel opening area; wherein a first planarization layer is arranged between the first micro lens and the second micro lens, a second planarization layer is arranged on the surface of thesecond micro lens, and the refractive index of the first micro lens is smaller than that of the first planarization layer, so that the first micro lens enables the visual angle of emergent light to be narrowed, and more light is emitted to the second micro lens; the refractive index of the second micro lens is greater than that of the second planarization layer, and the emission angle of the emergent light of the second micro lens is increased, so that the display visual angle of the OLED is enlarged, and the double-layer micro lens can improve the light extraction rate of the OLED display panel and improve the display visual angle.

The invention discloses an LED (Light Emitting Diode) structure and a manufacturing method thereof. The LED structure comprises a base plate, a light emitting epitaxy structure, a first electric contact layer, a second electric contact layer, a transparent insulating layer, a first reflection layer, a second reflection layer, a first barrier layer, a second barrier layer, a first electric electrode and a second electric electrode. The first electric contract layer and the second electric contact layer are respectively arranged on a first electric semiconductor layer and a second electric semiconductor layer which are in a light emitting epitaxy structure. The transparent insulating layer covers the light emitting epitaxy structure, the first electric contact layer and the second electric contact layer and comprises a first contact window and a second contact window which respectively expose the first electric contact layer and the second electric contact layer. The first reflection layer and the second reflection layer respectively cover the first contact window and the second contact window and extend on the transparent insulating layer. The first barrier layer and the second barrier layer respectively cover the first reflection layer and the second reflection layer. The first electric electrode and the second electric electrode are respectively arranged on the first barrier layer and the second barrier layer and fully fill the first contact window and the second contact window.

The invention discloses an LED structure and a fabrication method. The method comprises the following steps: placing a substrate in a solution for reaction; naturally forming a chemical reaction layer on the surface of a cutting street region of the substrate; forming a plurality of concave parts and convex parts on the surface of the cutting street region by selective etching; growing a semiconductor layer structure on a component region and the cutting street region on the surface of the substrate by an epitaxial growth technology; and then forming the LED by the semiconductor layer structure on the component region using yellow light lithography process.

The invention discloses a LED and a manufacturing method thereof. The LED at least comprises: a conductive substrate with oppositely a first and a second surfaces; a reflection structure at least comprising a conductive reflection layer jointed on the conductive substrate, and a conductive dispersed Bragg reflection structure overlapped on the conductive reflection layer; a light emitting epitaxial structure arranged on the reflection structure; a first electrode arranged on part of the light emitting epitaxial structure; and a second electrode jointed with the second surface of the conductive substrate.

Disclosed is a light-emitting diode which comprises a microlens baseplate, a reflecting layer, a cushioning layer, a first electric semiconductor layer, a source bed, a second electric semiconductor layer, a first electrode and a second electrode. A plurality of microlenses are arranged on the upper surface of the microlens baseplate; the cushioning layer is arranged on the upper surface of the microlens baseplate, and the first electric semiconductor layer is arranged on the cushioning layer; the source bed is partially arranged on the first electric semiconductor layer; the second electric semiconductor layer is arranged on the source bed; the first electrode is arranged on the other part of the source bed, which is uncovered by the first electric semiconductor layer; the second electrode is arranged on the second electric semiconductor layer; the reflecting layer is arranged on the lower surface of the microlens baseplate.

The invention discloses an LED (light-emitting diode) chip and a manufacturing method of the LED chip. The LED chip is characterized in that a first metal nanoparticle array is formed on an interface between an active layer and an adjacent layer of the active layer. Metal nanoparticles of the first metal nanoparticle array are excited by the light emitted from the active layer and provides an additional quantum well localized state for the active layer, so that the probability that electrons conduct radiationless recombination with voids by a defect level is reduced; an inner quantum effect is improved, and the luminous efficiency of the LED chip is improved.

The invention provides an active type OLED display device and a manufacturing method thereof. The active type OLED display device comprises an OLED pixel unit, wherein the OLED pixel unit comprises at least two TFTs (thin film transistors) as well as anodes, cathodes and organic functional layers which are arranged on the TFTs; the active type OLED display device further comprises a cathode power line and an insulating layer which is arranged between the cathodes and the cathode power line; contact holes used for communicating the cathodes and the cathode power line are formed in the insulating layer; cathode thickening layers are arranged on the cathodes; and the cathode thickening layers are only flatly arranged in orthographic projection areas of the contact holes on the cathodes. The thickness of the cathodes in cathode power supply contact areas is larger than that of the cathodes in other areas; the cathodes are thickened after the cathodes are prepared through an open type shade, so that the contact resistance between the OLED cathodes and the cathode power line is effectively reduced, and at the same time, the cathodes in an OLED open area are not thickened, so that the luminous efficiency of an OLED is not affected; and the preparation technology is simple and the technology can be easily implemented.

The invention discloses an organic light emitting display panel and a display device. The organic light emitting display panel comprises a substrate, an organic light emitting device and a cap layer, wherein the organic light emitting device is arranged on the substrate; the cap layer is arranged at the side far away from the substrate of the organic light emitting device; the cap layer comprises scattering particles; and a scattering micro-structure is arranged on the surface far away from the organic light emitting device of the cap layer. According to the organic light emitting display panel and the display device which are provided by the invention, the scattering particles and the scattering micro-structure are simultaneously arranged on the cap layer, and the light is emergent to each direction on the surface of the organic light emitting display panel through the combined action of two structures, so that the scattered light can be seen from all angles of the organic light emitting display panel, the view color cast phenomenon is improved, and meanwhile, the total reflection of the light can be reduced through the scattered particles, the optical loss is reduced and the light output rate is improved, and thus the luminous efficiency of the OLED device is improved.

The invention discloses an organic electrogenic light-emitting component, comprising a base material, a first optical structure, a transparent electrode, an organic light-emitting structure, a reflective layer and a second optical structure. The base material possesses a first surface and a second surface. The first optical structure is located on the first surface of the base material and possesses a first haze. The transparent electrode is located on the first optical structure. Theorganic light-emitting structure is located on the transparent electrode; the reflective layer is located on the organic light-emitting structure. The second optical structure is located on the second surface of the base material, wherein the first haze is smaller than a second haze. The organic electrogenic light-emitting component can substantially raise light out rate of the organic electrogenic light-emitting component.

The invention relates to an LED light-emitting module processing method which comprises the steps of: respectively welding at least one LED and two or more conductive terminals on a circuit substrate of a light source module to form electrical connection, integrally forming an accommodating cup part outside the circuit substrate in a covering and ejecting mode and respectively forming openings for exposing the LEDs and the conductive terminals in the upper side and the lower side of the accommodating cup part; and carrying out secondary package on the surfaces of the tops of the accommodating cup part and the LEDs in a covering and ejecting mode to form a lens with preset shape, wherein the lens can be directly secondarily packaged and formed on the accommodating cup part and the LEDs to ensure that the inside of the lens does not have clearance so that the phenomena of refraction and light attenuation because lights passes through different media can be decreased for improving the intensity of illumination of the LEDs through projecting bright lights towards the lens and then being capable of ensuring that the light source module generates a planar light source uniformly and outwards emitting lights.

The invention relates to a light emitting diode surface light source device, which comprises a substrate and a plurality of light emitting diode chips arranged on the substrate in array type arrangement. The thickness of the substrate is more than 1 mm. The area of the light emitting diode chip is between 0.08 and 0.25 mm <2>; and the distance between every two light emitting diode chips is more than twice of the dimension of the chip. The light emitting diode surface light source device uses the chip with small dimension and controls the distance between the chips and the thickness of the substrate, can achieve the promotion of luminous efficiency of the whole surface light source device through utilization of the chip with the small dimension, can maintain the temperature of the chip in a lower state, reduce the amplitude needed for radiation and is further favorable for the following radiation design of the whole light emitting diode surface light source device.

The invention discloses a QLED field effect transistor with the improved light extraction ratio, and a preparation method for the QLED field effect transistor. The QLED field effect transistor sequentially comprises an SOI substrate with the surface being provided with a plurality of nano-pits, and an OLED device located on the surface of the SOI substrate. The SOI substrate comprises a first silicon layer, an insulating layer and a second silicon layer, wherein the first silicon layer, the insulating layer and the second silicon layer are sequentially arranged. According to the invention, the surface of the SOI substrate is provided with the plurality of nano-pits, thereby enabling the surface of the SOI substrate to be in an uneven structure, and enabling the QLED device to form an uneven structure. Compared with a conventional plane structure, the QLED field effect transistor can improve the light extraction ratio, and improve the luminous efficiency of the device.

The embodiment of the invention provides an OLED light emitting device, a preparation method, a display substrate and a display device, and relates to the technical field of display. According to the technical purposes, the light extraction efficiency of the OLED light emitting device can be improved, and the visual angle can be increased. The OLED light emitting device comprises a reflecting electrode, an organic light-emitting layer and a semitransparent electrode, wherein the reflecting electrode, the organic light-emitting layer and the semitransparent electrode are arranged in sequence; the OLED light emitting device further comprises a light extraction layer which is located on the side, away from the organic light-emitting layer, of the semitransparent electrode and makes contact with the semitransparent electrode, the light extraction layer is of a single-layer structure in which the refractive index is decreased progressively in the light-emitting direction, and the light-emitting direction is the direction, away from the organic light-emitting layer, of the light extraction layer, wherein the refractive index of the side, making contact with the semitransparent electrode, of the light extraction layer is larger than the refractive index of the semitransparent electrode.

The invention relates to a luminescent diode (LED) and a manufacturing method thereof. The LED at least comprises the following processes: a conductive base plate is provided with a first surface relative with a second surface; a metal joint layer is arranged on the first surface of the conductive base plate; a metal reflecting layer is jointed with the metal joint layer; an N type semiconductor layer is arranged on the metal reflecting layer; an active layer is arranged on the N type semiconductor layer; a P type semiconductor layer is arranged on the active layer; a window layer is arranged on the P type semiconductor layer, wherein the thickness of the window layer is above 50Mum and the window layer is composed of transparent conductive material; a P type electrode is arranged on the window layer.

The invention relates to a sapphire-substrate single-electrode LED chip structure and a preparation method thereof. The sapphire-substrate single-electrode LED chip structure comprises a sapphire substrate. Epitaxial structural layers are grown on the sapphire substrate. The epitaxial structural layers include a U-GaN layer, an N-GaN layer, an MQW layer and a P-GaN layer. The MQW layer and a P-GaN layer are partially etched, and the N-GaN layer is exposed. An ITO layer is arranged on the P-GaN layer. A positive electrode is arranged on the ITO layer. The sapphire-substrate single-electrode LED chip structure is characterized in that negative electrodes are arranged on the side surfaces of the sapphire substrate, the negative electrodes are arranged in a skewed slot of one side surface or skewed slots of a plurality of side surfaces or side edges, and metal 1-5 [mu]m in thickness covers side walls of the skewed slots to form the negative electrodes. According to the invention, the area ratio of the electrodes is greatly lowered, and the light extraction rate of the chip is effectively improved.

A pixel structure, a manufacturing method and a display panel are provided. The pixel structure comprises a thin-film transistor array pattern unit and a pixel pattern unit which are disposed stacked; the pixel pattern unit includes a concave-convex structure film layer disposed on the thin-film transistor array pattern unit, a protection layer covered on the concave-convex structure film layer, a pixel electrode layer located on the protection layer, and electrically connected to the thin-film transistor array pattern unit and an emitting definition region so as to increase a light extraction rate of the light emitting device, decrease the power consumption of the display device and extend the life.

The invention discloses a method for enhancing the luminous efficiency of a nitride-based LED by using metal nanoparticles. The method comprises the following steps: (1) cleaning; (2) preparing a block copolymer organic solution; (3) coating; (4) preparing a precursor solution; (5) soaking; (6) curing. According to the method provided by the invention, the highly ordered metal nanoparticles are self-assembled on the surface of the GaN-based epitaxial thin film by utilizing a PS-b-P4VP block copolymer template method, the self-assembled metal nanoparticles are uniform in size and highly orderedin the arrangement, the plasma elements are generated through the surface ordered metal nanostructures to improve the light extraction rate, the whole enhancement method is simple and feasible in process, high in repeatability and suitable for large-scale industrial operation, subsequent special environments such as acid, alkali and high temperature do not exist, adverse effects on the GaN-basedepitaxial film structure are avoided and the product quality is guaranteed.