The invention provides an
interconnection structure and a forming method thereof, and belongs to the field of semiconductors. The
interconnection structure comprises a substrate which is provided with a groove; the
barrier layer is formed on the inner wall and the bottom of the groove; and the bonding layer is formed on the inner wall and the bottom of the
barrier layer, and the bonding layer is doped with
metal and is filled in the groove. According to the method, the
metal Sn is doped in the Ru thin film, and Ru has a very high
melting point, small intersolubility with
copper and excellent wettability and adhesion, so that the Ru thin film can be directly electroplated with
copper. The barrier
layers of Ru and TaN materials are combined, so that the
barrier layer has excellent
diffusion barrier property on Cu, and the good adhesion of Cu on Ru can be maintained. Besides,
metal Sn is doped in the Ru thin film, the lattice continuity of Ru can be destroyed by
doping a trace amount of
Sn element, grains can be refined, and the rapid
diffusion path of
copper along the
grain boundary can be reduced by a finer and more disordered
grain structure, so that the blocking performance is improved, and the reliability of the
interconnection structure is effectively improved.