Trap state regulation and control based nonvolatile multi-bit micro/nanometer resistive random access memory and use method therefor

Abstract

The invention discloses a trap state regulation and control based nonvolatile multi-bit micro/nanometer resistive random access memory and a use method therefor. The resistive random access memory comprises an insulating substrate, a single Sn-element-doped ZnO one-dimensional micro/nanowire, electrodes, a packaging material and the like; the single Sn-element-doped ZnO one-dimensional micro/nanowire is put on the insulating substrate, and electrodes are welded at the two ends of the nanowire respectively; and the single Sn-element-doped ZnO one-dimensional micro/nanowire and the electrodes are packaged on the insulating substrate by the packaging materials. In information write-in, a write-in voltage is applied between the electrodes at the two ends; in nonvolatile multi-bit storage, the write-in voltage is applied between the electrodes at the two ends, then the write-in voltage is removed and a read voltage is applied; in information erasure, the write-in voltage is applied between the electrodes at the two ends, then the write-in voltage is removed and the read voltage is applied; then the resistive random access memory is put in an environment at a temperature of 70 DEG C and then put in a room temperature. According to the resistive random access memory, response and storage to electric field information is realized; and meanwhile, the resistive random access memory is simple and convenient in process, small in volume, light and portable, high in compatibility and capable of realizing efficient utilization.

Description

technical field [0001] The present invention relates to the technical field of micro / nano materials, and relates to a non-volatile multi-bit micro / nano resistive memory that utilizes trap states to regulate resistance states. Large and small electrical signals are used to read, write, store and erase information. Background technique [0002] In recent years, among all kinds of new non-volatile memory devices, resistive memory has the advantages of simple structure, low energy consumption, fast response speed, good repeatability of reading and writing, long information storage time, non-destructive reading, and The advantages of extended assembly and CMOS process compatibility have attracted extensive attention from scientists at home and abroad. As a key physical phenomenon in RRAM, resistive switching effect is widely found in electrolyte materials, perovskite materials, and transparent metal oxides. The current-voltage characteristic curve of the resistive switching dev...

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Problems solved by technology

[0003] Although researchers at home and abroad have obtained some achievements in non-volatile RRAM, in order to obtain non-volatile multi-bit storage performance, researchers will construct gate voltage or design special device structure when designing devices, and a few do not Resistive memory that needs to build a gate voltage or a special device structure has only two resistance states, and it is difficult to achieve multi-bit storage performance

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