Fin type field effect transistor with SiGeSn channel and forming method thereof

Abstract

The invention provides a fin type field effect transistor with a SiGeSn channel and a forming method thereof. The forming method comprises the following steps of providing a substrate, forming a fin-shaped Ge structure on the substrate, injecting atoms or molecules or ions or plasma containing a Si element and a Sn element into the fin-shaped Ge structure so that a SiGeSn layer can be formed, and forming a gate stack structure on the SiGeSn layer. According to the forming method, a FinFET with a SiGeSn channel area small in thickness and good in quality can be obtained; the method has the advantages of being simple and easy to implement and low in cost.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor with a SiGeSn channel and a forming method thereof. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) have served the integrated circuit industry for over forty years. People have invented a variety of ingenious techniques to make the feature size shrink continuously, but it has not changed its basic structure. However, the integrated circuit design window, including performance, dynamic power consumption, static power consumption, and device tolerances, has shrunk to the point where a new transistor structure has to be invented. As the gate length continues to shrink, the transfer characteristics of the MOSFET (I ds -V gs ) degenerates mainly in two aspects. One is that the subthreshold slope becomes larger and the threshold voltage decreases, that is, by reducing the gate electrode voltage V g...

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Problems solved by technology

This method can obtain SiGeSn films with better crystal quality, but the equipment is expensive, the growth process is time-consuming, and the cost is high, which will be limited in large-scale production

Some people also use chemical vapor deposition (CVD) to grow SiGeSn films, but the quality of SiGeSn films is poor, the thermal stability is not good, Sn is easy to segregate, and it is not suitable for semiconductor devices.

Moreover, in the FinFET structure, it is generally necessary to use the method of selective area formation to form SiGeSn. In theory, chemical vapor deposition can be used to selectively grow SiGeSn thin films. However, the current method has poor thermal stability when non-selectively growing SiGeSn alloys. , Sn is easy to segregate, its selective growth process is not yet mature, and the cost is high

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