Fin type field effect transistor with SiGeSn source drain and forming method thereof

Abstract

The invention provides a fin type field effect transistor with SiGeSn source drain and a forming method thereof. The forming method comprises the following steps of providing a substrate, forming a fin-shaped SiGe structure on the substrate, forming a gate stack or a pseudo gate on the fin-shaped SiGe structure, forming an opening of a source area and an opening of a drain area in the two sides of the gate stack or the pseudo gate, exposing the fin-shaped SiGe structure from the positions of the openings, and injecting atoms or molecules or ions or plasma containing a Sn element into the fin-shaped SiGe structure so that an SiGeSn layer can be formed at the positions of the openings. According to the forming method of the fin type field effect transistor, a FinFET with the SiGeSn source drain can be formed; the thickness of the SiGeSn source drain is small, the crystalline quality is good, and therefore the transistor has the good electrical property; the method has the advantages of being simple and easy to implement and low in cost.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor with SiGeSn source and drain and a forming method thereof. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) have served the integrated circuit industry for over forty years. People have invented a variety of ingenious techniques to make the feature size shrink continuously, but it has not changed its basic structure. However, the integrated circuit design window, including performance, dynamic power consumption, static power consumption, and device tolerances, has shrunk to the point where a new transistor structure has to be invented. As the gate length continues to shrink, the transfer characteristics of the MOSFET (I ds -V gs ) degenerates mainly in two aspects. One is that the subthreshold slope becomes larger and the threshold voltage decreases, that is, by reducing the gate electrode volta...

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Problems solved by technology

[0006] The present invention aims to solve at least to a certain extent the problems of difficulty i

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