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method for preparing CTS or CTSSe film

A copper-tin-sulfur and thin-film technology, which is applied in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as limited fossil fuel reserves, achieve simple preparation equipment and processes, and large-area uniform preparation , the effect of low cost of preparation

Active Publication Date: 2015-11-11
UNIV OF SCI & TECH OF CHINA
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  • Claims
  • Application Information

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Problems solved by technology

[0002] The world's energy usage is about 4.7×10 20 Joule / year, as the world population continues to grow exponentially, energy demand continues to increase. By the end of 2050, energy consumption is expected to be about twice that of today. At present, energy demand mainly depends on the consumption of fossil fuels. However, fossil fuel reserves are limited, and fossil fuels Burning fuel produces CO 2 , NO 2 , CO, SO 2 cause pollution

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  • method for preparing CTS or CTSSe film
  • method for preparing CTS or CTSSe film

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preparation example Construction

[0053] In some specific embodiments of the present disclosure, the preparation method of the CTS or CTSSe film involved in the present disclosure is achieved through the following technical solutions, specifically including the following steps:

[0054] 1) First, the substrate is cleaned: the substrate is immersed in ethanol and ammonia solution in sequence, then deionized water is ultrasonically oscillated and rinsed, and blown dry with nitrogen.

[0055] 2) Depositing a layer of SnS thin film by chemical solution deposition on the surface of the clean substrate obtained in step 1); wherein the deposition solution is a mixed solution comprising stannous salt, complexing agent, sulfur-containing compound and an alkaline solution for adjusting pH; The concentration of the stannous salt in the mixed solution is 0.02-0.06M, the volume fraction of the complexing agent is 2%-8%, the concentration of the sulfur-containing compound is 0.06-0.12M, and the pH is adjusted to 10-14 with a...

Embodiment 1

[0069] Example 1: Preparation of thin films based on CTS (substrate / SnS / Cu stacking sequence)

[0070] 1) Clean the molybdenum-coated glass substrate first: immerse the substrate in ethanol and ammonia solution in sequence, then deionized water for ultrasonic vibration and rinse, and blow dry with nitrogen.

[0071] 2) on the surface of the clean molybdenum substrate obtained in step 1), chemical solution deposition deposits a layer of SnS thin film; the molybdenum substrate is vertically placed in a 30ml vial, and the deposition solution is configured: 1g of analytically pure stannous chloride ( SnCl 2 2H 2 O) add 5ml absolute ethanol to dissolve, then add 3ml28% ammoniacal liquor, add 12ml50% triethanolamine after 5s as complexing agent and the 1M thioacetamide of 8ml (C 2 h 5 NS) as a sulfur source, the concentration of tin protochloride in the deposition solution is 0.044M, the volume fraction of triethanolamine is 6%, the concentration of thioacetamide is 0.08M, and th...

Embodiment 2

[0074] Example 2: Preparation of thin films based on CTS (substrate / Cu / SnS stacking sequence)

[0075] 1) Clean the molybdenum-coated glass substrate first: immerse the substrate in ethanol and ammonia solution in sequence, then ultrasonically rinse with deionized water, and blow dry with nitrogen.

[0076] 2) On the surface of the clean molybdenum substrate obtained in step 1), chemical solution deposition deposits a layer of Cu thin film; the molybdenum substrate is vertically placed in a 30ml vial, and the deposition solution is configured; take a 100ml beaker, and first take a concentration of 0.5 M copper sulfate (CuSO 4 ·5H 2 O) 13ml, reducing agent sodium ascorbate (C 6 h 7 o 6 Na) 0.5M7ml joins in the beaker, utilizes stirring bar to stir, the time is 30s, then the complexing agent trisodium citrate of 0.5M (C 6 h 7 o 5 Na 3 2H 2 (2) 13ml is added wherein rapidly, after stirring 90s, add the 28% ammoniacal liquor of 0.7ml, add deionized water to 60ml, at this ...

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Abstract

The invention provides a method for preparing a CTS or CTSSe film. The method comprises a step 1 of cleaning a substrate to obtain a clean substrate; a step 2 of continuously and alternately depositing a SnS film and a Cu film on the clean substrate in the step 1 in any sequence by using a solution deposition method; performing heat treatment on a laminate containing a Sn-element film and a Cu-element film acquired in the step 2 in sulfur or selenium atmosphere in order to obtain the copper-tin-sulfur or CTS or CTSSe film.

Description

technical field [0001] The disclosure relates to the technical field of solar cell materials and devices, in particular to a method for preparing a copper-tin-sulfur or copper-tin-sulfur-selenide thin film. Background technique [0002] The world's energy usage is about 4.7×10 20 Joule / year, as the world population continues to grow exponentially, energy demand continues to increase. By the end of 2050, energy consumption is expected to be about twice that of today. At present, energy demand mainly depends on the consumption of fossil fuels. However, fossil fuel reserves are limited, and fossil fuels Burning fuel produces CO 2 , NO 2 , CO, SO 2 cause pollution. Therefore, finding renewable clean energy to replace traditional energy is the main topic to solve energy problems. Among the currently known renewable energy sources, solar energy is the most abundant and cleanest new energy source. [0003] Among many solar cell researches, copper zinc tin sulfur selenide (CZT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02H01L21/477
CPCH01L21/02422H01L21/02568H01L21/02628H01L21/477H01L31/18Y02P70/50
Inventor 朱长飞王亚光李建民刘伟丰江国顺
Owner UNIV OF SCI & TECH OF CHINA
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