32 results about "Absorption edge" patented technology

An element quantitative analysis method and device, electronic equipment and storage medium are disclosed. The element quantitative analysis method comprises: obtaining spectral data of a sample to be measured and a reference sample through rays, the sample to be measured comprising at least one element to be measured, and the reference sample being a sample with the same matrix composition as the sample to be measured but not containing the element to be measured; determining a transmittance value at an absorption edge of each element to be measured in the sample to be measured based on the spectral data of the sample to be measured and the reference sample; and determining a concentration value of each element to be measured in the sample to be measured based on the transmittance value at the absorption edge of each element to be measured in the sample to be measured.

The invention relates to the technical field of photocatalysis, in particular to a medium-entropy sulfide photocatalyst and a preparation method and application thereof.Atomic-scale uniform distribution of quaternary metal elements generates a remarkable medium-entropy effect, an energy band structure can be regulated and controlled through a local stress field formed through lattice distortion, and the light absorption edge of a material is expanded; meanwhile, the carrier migration rate is increased through the electron synergistic effect among multiple elements, and photocatalytic reaction kinetics is remarkably enhanced; in addition, the unique particle morphology of the medium-entropy sulfide provides abundant active site exposure and efficient substance transmission channels; compared with traditional sulfides, the structure reduces the recombination rate of photo-induced electron-hole pairs, and effectively improves the photocatalytic activity.

The invention provides an N-doped TiO2-BiVO4 heterojunction photocatalytic coating as well as a preparation method and application thereof, and belongs to the technical field of photocatalytic materials. Nitrogen doping is achieved through nitrogen source pyrolysis, an N-doped Bi-Ti heterojunction is formed, the molar ratio of Bi to Ti can be optimized, a tight heterojunction interface is formed, a light absorption edge is subjected to red shift to 600 nm, the carrier separation efficiency is improved, N doping is introduced into an intermediate energy level, the light response range is widened through BiVO4, the net degradation rate of formaldehyde within 24 hours reaches 78% through cooperation of the two, and the light response range is widened through BiVO4. Meanwhile, the problems that an existing photocatalytic coating is low in visible light utilization rate and poor in adhesive force are solved.

The invention belongs to the field of organic photoelectric materials, and relates to a cyanoindanone-modified boron-aza polycyclic aromatic hydrocarbon, and a preparation method and application thereof, and the cyanoindanone-modified boron-aza polycyclic aromatic hydrocarbon has a structure as shown in a general formula I and a general formula II. The cyanoindanone-modified boron-nitrogen heterocyclic polycyclic aromatic hydrocarbon provided by the invention shows the properties of wide spectrum and strong absorption, and meanwhile, the boron-nitrogen compound has a red-shifted absorption edge which can reach 815 nm at most.

This invention provides an N-doped TiO₂ 2 -BiVO 4 This invention relates to heterojunction photocatalytic coatings, their preparation methods, and applications, belonging to the field of photocatalytic materials technology. The invention achieves nitrogen doping through nitrogen source pyrolysis, forming a N-doped Bi-Ti heterojunction. Furthermore, by optimizing the Bi:Ti molar ratio, a tight heterojunction interface can be formed, redshifting the light absorption edge to 600 nm and improving carrier separation efficiency. N doping introduces intermediate energy levels, resulting in BiVO₄… 4 By broadening the light response range, the two work together to achieve a net formaldehyde degradation rate of 78% in 24 hours, while also solving the problems of low visible light utilization and poor adhesion of existing photocatalytic coatings.

According to the silicon-based epitaxial detector and the preparation method thereof provided by the invention, the tensile stress of the epitaxial layer crystal can be effectively improved, and the direct band gap of the crystal is narrowed, so that the absorption edge of the crystal can be widened to the C + L wave band, and the detection wave band of the detector is widened to the C + L wave band from the C wave band. The silicon-based epitaxial detector comprises an SOI substrate, the SOI substrate comprises a bottom silicon layer, a buried oxide layer and a top silicon layer, the buried oxide layer is deposited on the upper surface of the bottom silicon layer, and the top silicon layer is deposited on the upper surface of the buried oxide layer; the first middle silicon oxide layer grows on the upper surface of the top silicon layer, and a groove which penetrates through the first middle silicon oxide layer and at least reaches the upper surface of the top silicon layer is formed in the first middle silicon oxide layer; the epitaxial layer is formed in the groove; and the strain dielectric layer covers the upper surface of the epitaxial layer, has compression stress inside, and is used as a stress source to apply the compression stress to the epitaxial layer.

The invention relates to an optically variable security element (12) for securing security papers, value documents and other value items, comprising at least one color-changing multilayer interference layer element (22) having a reflective layer (28), at least one absorbent layer (24) and at least one dielectric spacer layer (26) between the reflective layer (28) and the at least one absorbent layer (24), due to its layered structure, the multilayer interference layer element (22) produces an intrinsic color shift effect with a first color when viewed from a first viewing direction and with a second, different color when viewed from a second viewing direction. According to the invention, a blue light absorber (32) having an absorption edge in the wavelength range of 380 nm to 460 nm is arranged above and / or below the at least one multi-layer interference layer element (22), said absorber selectively absorbing a blue light component in order to vary the intrinsic color shift effect of the at least one multi-layer interference layer element (22), the security element (12) is configured such that the security element (12) exhibits a modified color shift effect between a third color when viewed from the first viewing direction (40) and a fourth color which is different when viewed from the second viewing direction (42), the third color being different from the first color in hue and / or color purity, and the fourth color being different from the first color in hue and / or color purity. And / or the fourth color differs from the second color in hue and / or color purity.

A temperature monitoring system includes a semiconductor member mounted onto the surface of an object having a surface whose temperature is to be monitored. The semiconductor member has a temperature-dependent bandgap with an absorption edge that varies with temperature. A light source is configured to illuminate the semiconductor member with monochromatic light. The monochromatic light has a wavelength equal to an absorption edge wavelength that is associated with the absorption edge when the semiconductor member is at a specified temperature. An imaging device is configured to receive light reflected from the semiconductor member when illuminated with the monochromatic light such that a surface temperature of the object is at the specified temperature when a change in an amount of reflected light that is received indicates that the wavelength of the monochromatic light is equal to the absorption edge wavelength at the specified temperature.

The present disclosure relates to a method for manufacturing a regenerated positive electrode active material. Provided is a technique for restoring the capacity in a degraded positive electrode active material and reducing the reaction resistance increased due to degradation without using a firing means. According to the technology disclosed herein, a method for producing a regenerated positive electrode active material is provided. The manufacturing method comprises the following steps: preparing a positive electrode active material; and grinding the positive electrode active material. The positive electrode active material includes a core particle having a layered crystal structure, and a coating portion having a rock salt crystal structure on the surface of the core particle. In this production method, at least a portion of the coated portion is separated from the core particles by grinding. The ratio (IB / IA) of the peak intensity IA at 8341 eV of the nickel (Ni)-K absorption edge as measured in XAFS analysis of the positive electrode active material before polishing to the peak intensity IB at 8341 eV of the nickel (Ni)-K absorption edge as measured in XAFS analysis of the positive electrode active material after polishing is 0.7 or less.

The application provides an X-ray absorption detection device, an X-ray absorption detection method, a storage medium and a computer program product; the X-ray absorption detection device comprises an X-ray source, a curved crystal, a sample table and a detector; the X-ray absorption detection device further comprises a rotation adjusting sub-device and a controller; the curved crystal and the detector are arranged on the rotation adjusting sub-device; wherein the controller is configured to determine a measurement parameter based on an absorption edge energy of a to-be-detected element through a first model; the measurement parameter comprises an optical path parameter of a Rowland circle; based on the optical path parameter, the rotation adjusting sub-device is controlled to be translated and / or rotated, so that the curved crystal and the detector are located on the optical path of the Rowland circle, and a measured sample on the sample table is located on a diffraction optical path of the Rowland circle.

To provide a light-emitting device with high emission efficiency and high reliability. A light-emitting layer of the light-emitting device includes a first substance emitting light from a doublet excited state based on f-d transition and a second substance that is a fluorescent substance. The longest-wavelength absorption edge among absorption edges in the absorption spectrum of the first substance is positioned at a wavelength shorter than the wavelength of the longest-wavelength absorption edge among absorption edges in the absorption spectrum of the second substance. The first substance has a short exciton lifetime and high exciton generation efficiency, and efficient energy transfer occurs between the first substance and the second substance; thus, the light-emitting device can have high emission efficiency and high reliability.

This invention relates to the field of photocatalytic materials and green hydrogen production technology, specifically to a g-C3N4 / Mn 0.3 Cd 0.7 S-type Z-type heterojunction photocatalyst, its preparation method and application, a g-C3N4 / Mn 0.3 Cd 0.7 The Z-type heterojunction photocatalyst of S is a 2D g-C3N4 sheet supported on 1D Mn. 0.3 Cd 0.7 A composite structure of S nanorods; wherein Mn 0.3 Cd 0.7 The (002) lattice spacing of S is 0.34 nm, the light absorption edge of the composite catalyst is 540±5 nm, the band gap is 2.35~2.55 eV, and the electrochemical double-layer capacitance is 100.85±2 μF·cm. ‑2 The elements C, N, Mn, Cd, and S are uniformly distributed in the catalyst, and the heterojunction interface forms a close contact. The catalyst has ultra-high hydrogen evolution activity, excellent cycle stability, and strong redox capability.

The invention discloses a tunable near-infrared image sensor, the tunable near-infrared image sensor is applied to biological feature recognition, and the tunable near-infrared image sensor comprises a plurality of arrayed pixel sensing units; the pixel sensing unit comprises a semitransparent first electrode and a transparent second electrode, the total reflection second electrode is arranged opposite to the first electrode, and the total reflection second electrode and the first electrode form a microcavity used for enhancing the spectral response of a near-infrared target wave band; the photoelectric conversion layer is arranged between the first electrode and the second electrode, and a section of absorption edge of an absorption wave band of the photoelectric conversion layer serves as a near-infrared target wave band to be enhanced by the microcavity in spectral response; the optical modulation layer is used for absorbing and filtering light of other wave bands except the near-infrared target wave band and transmitting carriers, and is arranged between the first electrode and the photoelectric conversion layer; and the cavity length of the microcavity is regulated and controlled by regulating the thickness of the optical modulation layer, so that the spectral response of the near-infrared target wave band is enhanced, and the peak wave band is regulated and controlled.

Light-emitting device comprising: an EL layer between a pair of electrodes, wherein the EL layer comprises a light-emitting layer, wherein the light-emitting layer comprises an organic compound comprising a naphtho[2',1':4,5]furo[2,3-b]pyrazine skeleton and a phosphorescent substance, where a T1 level of the phosphorescent substance T G lower than or equal to 2.5 eV, where the T G a T1 level is derived from an absorption edge of an absorption spectrum of the phosphorescent substance, where a difference between a T1 level of the organic compound T H and the T1 level of the phosphorescent substance T G a formula (1) is satisfied, and 0.1 eV ≦ TH − TG ≦ 0.4 eV where the T Ha Tl level is derived from an emission edge on a short wavelength side of a phosphorescence spectrum of the organic compound.

This application relates to the field of X-ray detection technology, specifically to a high-throughput X-ray multi-energy spectral detection system and method. The detection method includes preparing n filters Z with different K absorption limits. i , i∈(1,n), n≥15; the incident X-rays, after collimation, pass through each filter Z i The electrical signal S was detected after attenuation. i S i =∫η×[φ(E)×C i (E)]dE,(E min E max ); for electrical signal S i The incident X-ray energy spectrum is obtained by discretizing the spectrum and then solving for the least squares solution. Based on the detection principle of energy integration, this application achieves flexible modulation and demodulation of high-throughput X-ray energy spectra through mathematical combinations of filters with different linear attenuation coefficients, balancing detection cost with obtaining high-resolution X-ray energy spectra.

The invention discloses a lithium molybdenum chromate single crystal, a preparation method thereof and an optical filter, and belongs to the technical field of optical materials. The general chemical formula of the lithium molybdenum chromate single crystal is Li2CrxMo1-xO4, x is larger than or equal to 0.005 and smaller than or equal to 0.5, the lithium molybdenum chromate single crystal is a trigonal system, the space group is R, the lithium molybdenum chromate single crystal is in cut-off absorption at the wavelength of 500 nm or below, the lithium molybdenum chromate single crystal has high transmittance from 500 nm or above to the infrared band, the room-temperature heat conductivity is 4 W * m <-1 > * K <-1 >, and the lithium molybdenum chromate single crystal is suitable for manufacturing 500 nm long-wave-pass optical filters high in stability and reliability. According to the invention, a proper amount of hexavalent chromium (Cr < 6 + >) is introduced into a lithium molybdate matrix, and an absorption edge can be moved and a required long-wave-pass characteristic can be formed by regulating and controlling the content of hexavalent chromium; meanwhile, the oxide crystal is more suitable for high-power transmission and optical application in a harsh environment due to high thermal conductivity and mechanical stability, and the problem that an existing thin film and a polymer optical filter are insufficient in thermal stability and high-power bearing is solved.

The invention provides a maximum infrared active optical phonon frequency quantitative prediction method and model, and the model comprises the steps: 1, obtaining a lattice structure of a sample material, and deducing intrinsic physical parameters of the sample material based on the crystal structure as model input data; determining a chemical bond type mu and a proportionality coefficient F mu of the dominant highest-frequency infrared active optical phonon mode through space group symmetry analysis; 2, calculating through DFPT to obtain vDFPT of a to-be-detected sample material system, and determining conditional constants k0 and alpha of the to-be-detected sample material system through MCMC fitting; 3, outputting the highest infrared active optical phonon frequency through a formula; according to the method, the multi-chemical bond coupling effect, the bond valence and the lattice structure are fully considered, the influence of temperature and element doping is further considered in detail, the prediction precision is remarkably improved, and the method is suitable for infrared optical performance optimization, infrared cut-off absorption edge design and high-throughput screening of multi-element oxide systems such as perovskite, pyrochlore and spinel.

The application belongs to the field of organic photovoltaic materials, and relates to a multiple resonance type non-fullerene acceptor material, a preparation method and application, the multiple resonance type non-fullerene acceptor material has the structures shown in general formula I and general formula II. The multiple resonance type non-fullerene acceptor material provided by the application has a maximum absorption edge of 812 nm, and a molar absorption coefficient as high as 6.01*10 4 M ‑ 1 cm ‑1 , and simultaneously has a deep LUMO energy level, the lowest being -3.62 eV.

The invention provides a tungsten oxide modified TiO2 nanorod array as well as a preparation method and application thereof, and belongs to the technical field of photoelectrocatalysis. The tungsten oxide modified TiO2 nanorod array provided by the invention comprises TiO2 nanorods and sea urchin-shaped WO3 deposited on the surfaces of the TiO2 nanorods, the sea urchin-shaped WO3 comprises a WO3 central core and a WO3 nanometer needle tip which radiates outwards. According to the invention, a heterojunction interface and a built-in electric field are formed between WO3 and TiO2, so that the recombination of photo-induced electron-hole pairs is effectively inhibited, and the charge separation and transmission efficiency is enhanced. Meanwhile, due to the introduction of WO3, the light absorption edge of the composite material is slightly subjected to red shift, and the response of an ultraviolet region is enhanced. The invention also provides a preparation method of the tungsten oxide modified TiO2 nanorod array, and the firm combination and the crystallization quality of the heterojunction are ensured only through a simple hydrothermal and annealing preparation method.

Provided is a technique to recover a capacity of a degraded positive electrode active material and to reduce a response resistance increased by the degradation without using a means for baking. A manufacturing method disclosed herein includes polishing the positive electrode active material. The positive electrode active material includes a core particle having a layered crystal structure and includes a coating part having a rock salt crystal structure on a surface of the core particle. A ratio (IB / IA) of a peak strength IA at 8341 eV on a nickel (Ni)—K absorption edge measured by a XAFS analysis on the positive electrode active material before the polishing and a peak strength IB at the 8341 eV on the nickel (Ni)—K absorption edge measured by the XAFS analysis on the positive electrode active material after the polishing becomes equal to or less than 0.7.

The application relates to the technical field of photocatalytic material preparation, and discloses a preparation method of calcium hydroxystannate material based on morphology reconstruction to enhance intrinsic light absorption, which comprises the following steps: firstly, a regular polyhedral calcium hydroxystannate precursor powder is prepared by adopting a liquid phase precipitation method; subsequently, deionized water and anhydrous ethanol are mixed to construct a solvent cage medium, and a low-concentration etching working solution is prepared by adding an organic weak acid; the precursor is added into the working solution for constant-speed stirring, morphology reconstruction is carried out on the crystal surface by using the solvent cage shielding effect and acid etching effect, and solid-liquid separation is carried out immediately after the reaction is completed; the obtained precipitate is washed and dried to obtain the calcium hydroxystannate material with a surface micro-rough structure. Through a mild and limited etching process, a defect layer rich in oxygen vacancies is constructed in situ on the crystal surface, the micro-morphology is reconstructed into an octagonal shape, the band gap width is effectively reduced, the light absorption edge is red-shifted, carrier recombination is inhibited, and therefore the photocatalytic mineralization performance of the material under visible light is improved.

The invention discloses a self-adaptive spectral response visible-near infrared organic photoelectric detector and application thereof. The self-adaptive spectral response visible-near infrared organic photoelectric detector comprises a bottom electrode layer, a heterojunction photosensitive layer and a top electrode layer, the heterojunction photosensitive layer comprises a bulk heterojunction layer formed by a first organic acceptor material and an organic donor material or an organic donor layer formed by the organic donor material and an organic acceptor layer formed by a second organic acceptor material which are sequentially arranged in the direction of incident light; the bulk heterojunction layer or the organic donor layer and the organic acceptor layer have different absorption edges, and the absorption wave band of the bulk heterojunction layer or the organic donor layer and the absorption wave band of the organic acceptor layer are partially overlapped; the organic light detector responds to a narrowband wave band under the first bias voltage and responds to a broadband wave band under the second bias voltage. By utilizing the characteristics of the heterojunction photosensitive layer, high sensitivity and high signal-to-noise ratio can be obtained in a narrow-band wave band, and comprehensive detection capability can be provided in a wider broadband wave band range.

An amorphous alloy soft magnetic powder has a composition represented by (FexCo1−x)100−(a+b)(SiyB1−y)aMb, where M is at least one selected from the group consisting of C, S, P, Sn, Mo, Cu, and Nb, and x, y, a, and b satisfy 0.73≤x≤0.85, 0.02≤y≤0.10, 13.0≤a≤19.0, and 0≤b≤2.0. A Si—K absorption edge XANES spectrum obtained when performing an XAFS measurement on particles has a peak A present in a range of 1842±1 eV, a peak B present in a range of 1845±1 eV, and a peak C present in a range of 1848±1 eV. An intensity ratio A / C is 0.40 or less, and an intensity ratio B / C is 0.60 or less.

The invention relates to an intermediate band gap photovoltaic cell and a preparation method thereof, and the photovoltaic cell is of a multi-layer structure and comprises an absorption layer, a collector electrode, an emitter electrode, a front window layer and a rear window layer. The absorption layer is an absorption layer with a middle band gap; the preparation method comprises the following steps: growing the absorption layer; when the absorption layer is grown, a middle band gap is formed in a doping or quantum dot mode. The absorption layer is simple in structure, reasonable in design and ingenious in conception, the (single-layer) absorption layer has more absorption edges due to introduction of the middle band gap, the absorption range can be widened, more photons can be absorbed, and energy can be converted more efficiently (heat loss is reduced).

Processing is performed on projection data acquired by a photon-counting detector that converts incident radiation into the number of detected photons for each of a plurality of energy bins. Material decomposition of a subject is performed based on a plurality of pieces of calibration data representing energy spectra of a predetermined calibration member and an energy spectrum of an energy region on at least one side with respect to an absorption edge of a photon energy of a material expected to be present in a body of the subject during imaging of the subject, in projection data acquired by measuring the subject with the photon-counting detector.

The present application relates to a semiconductor nanoparticle containing an AgCu chalcogenide represented by the following formula composed of Ag, Cu, and a chalcogen element (Ch). In the present application, it is necessary to contain Te as the chalcogen element. By applying Te, which is larger in mass among chalcogen elements, the photoresponsivity shifts to the long wavelength side. The semiconductor nanoparticle according to the present application contains 90 atomic% or more of the AgCu chalcogenide, and the absorption edge wavelength on the long wavelength side of the absorption spectrum becomes 1200 nm or more. In the formula, Ch is a chalcogen element. x, y, z are the atomic numbers of Ag, Cu, and the chalcogen element, and 0.2 ≤ z / (x+y) ≤ 1. In addition, 1.0 ≤ x / y ≤ 10.0.

The application discloses a lithium molybdate-chromate monocrystal, a preparation method thereof and an optical filter, and belongs to the technical field of optical materials. x Mo 1‑x O4, wherein 0.005<=x<=0.5, the lithium molybdate-chromate monocrystal is of a trigonal system, a space group is R, is of a cut-off absorption below a wavelength of 500 nm, has a high transmittance from above 500 nm to an infrared wave band, and has a room-temperature thermal conductivity of 4 W.m ‑1 ·K ‑1 -1.K-1, and is suitable for manufacturing a 500 nm long-wave-pass optical filter with high stability and high reliability. The application introduces appropriate hexavalent chromium (Cr 6+ ) into a lithium molybdate matrix, and can move an absorption edge and form a required long-wave-pass characteristic by adjusting the content of hexavalent chromium; meanwhile, the high thermal conductivity and mechanical stability of the oxide crystal make it more suitable for high-power transmission and optical application in a harsh environment, and solve the problems of the existing thin film and polymer optical filter in thermal stability and high-power bearing.

Ions (105) are implanted into a multiple quantum well structure (102), and the multiple quantum well structure (102) in a second region (152) is then disordered through heating to form a disordered layer (106) (second step). Since a mask layer (104) is formed, the ions (105) are not implanted into the multiple quantum well structure (102) in a first region (151). By diffusing impurities introduced by ion implantation through heating, semiconductor materials constituting a well layer and barrier layer can be mutually diffused, the multiple quantum well is disordered, the band gap of the multiple quantum well structure (102) in the second region (152) is increased, and only an absorption edge wavelength is shortened.

To provide a semiconductor nanoparticle which has improved light absorption characteristics in a long wavelength region and can suitably cope with a near infrared region and a short wave infrared region.SOLUTION: The present invention relates to a semiconductor nanoparticle containing an AgTeS compound composed of Ag, Te, and S as essential constituent elements. The AgTeS compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles according to the present invention contain 90 atom% or more of the AgTeS compound. The long-wavelength-side absorption-edge wave length is equal to or longer than 1100nm. In addition, the semiconductor nanoparticles according to the present invention can also emit light. (In the formula, x, y, and z are the numbers of atoms of Ag, Te, and S, and 0.5 ≤ x / (x + y + z) ≤ 0.7.). In addition, 0.3 ≤ y / (y + z) ≤ 0.99. ) SELECTED DRAWING: Figure 2