54 results about "Absorption edge" patented technology

An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

The present invention relates to a semiconductor nanoparticle containing an AgAuTe compound comprising Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticle is represented by the following formula. The semiconductor nanoparticle according to the present invention contains 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticle according to the present invention has an improved light absorption characteristic in the long wavelength range and can suitably support applications in the near-infrared range and the short-wave infrared range. Specifically, the semiconductor nanoparticle according to the present invention has an absorption edge wavelength on the long wavelength side of the absorption spectrum of 1200 nm or greater. AgxAuyTez (In the formula, x, y, and z represent the number of atoms of Ag, Au, and Te, respectively, and 0.25 ≤ z / (x + y) ≤ 1 holds true. In addition, y / (x + y + z) > 0.10 also holds true.)

An element quantitative analysis method and device, electronic equipment and storage medium are disclosed. The element quantitative analysis method comprises: obtaining spectral data of a sample to be measured and a reference sample through rays, the sample to be measured comprising at least one element to be measured, and the reference sample being a sample with the same matrix composition as the sample to be measured but not containing the element to be measured; determining a transmittance value at an absorption edge of each element to be measured in the sample to be measured based on the spectral data of the sample to be measured and the reference sample; and determining a concentration value of each element to be measured in the sample to be measured based on the transmittance value at the absorption edge of each element to be measured in the sample to be measured.

The invention relates to the technical field of photocatalysis, in particular to a medium-entropy sulfide photocatalyst and a preparation method and application thereof.Atomic-scale uniform distribution of quaternary metal elements generates a remarkable medium-entropy effect, an energy band structure can be regulated and controlled through a local stress field formed through lattice distortion, and the light absorption edge of a material is expanded; meanwhile, the carrier migration rate is increased through the electron synergistic effect among multiple elements, and photocatalytic reaction kinetics is remarkably enhanced; in addition, the unique particle morphology of the medium-entropy sulfide provides abundant active site exposure and efficient substance transmission channels; compared with traditional sulfides, the structure reduces the recombination rate of photo-induced electron-hole pairs, and effectively improves the photocatalytic activity.

The invention provides an N-doped TiO2-BiVO4 heterojunction photocatalytic coating as well as a preparation method and application thereof, and belongs to the technical field of photocatalytic materials. Nitrogen doping is achieved through nitrogen source pyrolysis, an N-doped Bi-Ti heterojunction is formed, the molar ratio of Bi to Ti can be optimized, a tight heterojunction interface is formed, a light absorption edge is subjected to red shift to 600 nm, the carrier separation efficiency is improved, N doping is introduced into an intermediate energy level, the light response range is widened through BiVO4, the net degradation rate of formaldehyde within 24 hours reaches 78% through cooperation of the two, and the light response range is widened through BiVO4. Meanwhile, the problems that an existing photocatalytic coating is low in visible light utilization rate and poor in adhesive force are solved.

The invention belongs to the field of organic photoelectric materials, and relates to a cyanoindanone-modified boron-aza polycyclic aromatic hydrocarbon, and a preparation method and application thereof, and the cyanoindanone-modified boron-aza polycyclic aromatic hydrocarbon has a structure as shown in a general formula I and a general formula II. The cyanoindanone-modified boron-nitrogen heterocyclic polycyclic aromatic hydrocarbon provided by the invention shows the properties of wide spectrum and strong absorption, and meanwhile, the boron-nitrogen compound has a red-shifted absorption edge which can reach 815 nm at most.

This invention provides an N-doped TiO₂ 2 -BiVO 4 This invention relates to heterojunction photocatalytic coatings, their preparation methods, and applications, belonging to the field of photocatalytic materials technology. The invention achieves nitrogen doping through nitrogen source pyrolysis, forming a N-doped Bi-Ti heterojunction. Furthermore, by optimizing the Bi:Ti molar ratio, a tight heterojunction interface can be formed, redshifting the light absorption edge to 600 nm and improving carrier separation efficiency. N doping introduces intermediate energy levels, resulting in BiVO₄… 4 By broadening the light response range, the two work together to achieve a net formaldehyde degradation rate of 78% in 24 hours, while also solving the problems of low visible light utilization and poor adhesion of existing photocatalytic coatings.

The present invention discloses a visible light-responsive photocatalytic antibacterial material and a preparation method thereof, and its chemical formula is: Ag2TaNb 7‑7x V 7x O 21 , where x is the molar number of vanadium ions V 5+ substituting niobium ions Nb 5+ , and 0 ≤ x ≤ 0.07. The partial substitution of niobium ions Nb 5+ by vanadium ions V 5+ in the lattice causes the optical cut-off light absorption edge of the material to redshift, broadening the light absorption wavelength range of the material in the visible light region; at the same time, the lattice perturbation brought about by doping also improves the separation efficiency of photo-generated charges, not only further enhancing the photocatalytic performance, but also broadening the light response range, achieving a significant improvement in the antibacterial effect under visible light irradiation. The preparation method of the material of the present invention is simple and easy to implement, the raw materials are easily available, the cost is low, the preparation method is pollution-free, its photocatalytic antibacterial activity is high, and it has good application prospects in the antibacterial inactivation of Escherichia coli and Staphylococcus epidermidis.

According to the silicon-based epitaxial detector and the preparation method thereof provided by the invention, the tensile stress of the epitaxial layer crystal can be effectively improved, and the direct band gap of the crystal is narrowed, so that the absorption edge of the crystal can be widened to the C + L wave band, and the detection wave band of the detector is widened to the C + L wave band from the C wave band. The silicon-based epitaxial detector comprises an SOI substrate, the SOI substrate comprises a bottom silicon layer, a buried oxide layer and a top silicon layer, the buried oxide layer is deposited on the upper surface of the bottom silicon layer, and the top silicon layer is deposited on the upper surface of the buried oxide layer; the first middle silicon oxide layer grows on the upper surface of the top silicon layer, and a groove which penetrates through the first middle silicon oxide layer and at least reaches the upper surface of the top silicon layer is formed in the first middle silicon oxide layer; the epitaxial layer is formed in the groove; and the strain dielectric layer covers the upper surface of the epitaxial layer, has compression stress inside, and is used as a stress source to apply the compression stress to the epitaxial layer.

An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

The invention provides a preparation method of a wide-band-gap optical crystal sodium potassium fluosilicate and application of the wide-band-gap optical crystal sodium potassium fluosilicate in a deep ultraviolet optical window device. The chemical formula of the sodium potassium fluosilicate crystal is KNaSiF6, the crystal has a symmetric center and belongs to an orthorhombic crystal system, the space group is Pnma, the cell parameters are # imgabs 0 # beta = 90 degrees, gamma = 90 degrees, Z = 4, and the unit cell volume is # imgabs 1 #. The sodium potassium fluosilicate broad-band gap optical crystal with the size larger than 2.67 * 1.04 * 1.02 mm < 3 > can be obtained by adopting a hydrothermal cation replacement crystallization method for growth; the potassium sodium fluosilicate crystal with a larger size can be obtained by using a higher growth temperature, replacing a larger crystallization space, prolonging the crystallization time and the like, and the method is green, environment-friendly, low in cost, high in yield, high in quality of the grown single crystal, large in size and suitable for large-scale production. The potassium sodium fluosilicate crystal has a theoretical band gap of 10.11 eV, corresponds to a deep ultraviolet cut-off absorption edge of 123 nm, is suitable for deep ultraviolet optical window devices, is suitable for optical window devices with the wavelength of 123-3500 nm in a light transmission band, and is especially suitable for deep ultraviolet optical window devices with the wavelength of 123-200 nm.

The invention provides a temperature decoupling method of an optical fiber Fabry-Perot sensor and the optical fiber Fabry-Perot sensor, the optical fiber Fabry-Perot sensor is provided with a Fabry-Perot cavity and comprises a first optical fiber and a sensing unit, the first optical fiber receives incident light generated by a broadband light source, and the sensing unit is provided with a first reflecting surface and comprises a decoupling material. The first reflecting surface is a reflecting surface used for forming a Fabry-Perot cavity, the decoupling material is a semiconductor material of which the forbidden bandwidth is related to the temperature, the wavelength of an absorption edge moves when the temperature changes, and the temperature decoupling method comprises the following steps: converting incident light into a first optical signal carrying sensing information by using the Fabry-Perot cavity; enabling the incident light to pass through a decoupling material to form a second optical signal carrying temperature information; a measured absorption edge wavelength is identified based on the second optical signal to determine measured temperature information, and information related to the first optical signal is temperature decoupled based on the measured temperature information. Therefore, the accuracy of sensing information can be improved, and the structure of the sensor can be simplified.

An infrared sensor is provided, which includes a light absorption layer that absorbs an infrared ray. The light absorption layer includes quantum dots. The quantum dots include at least one kind of PbS, PbSe, CdHgTe, Ag2S, Ag2Se, Ag2Te, AgInSe2, AgInTe2, CuInSe2, CuInTe2, and InAs. Moreover, the light absorption layer includes a quantum dot layer divided into at least two regions, including the quantum dots and having mutually different absorption edge wavelengths, out of a wavelength region from a near-infrared region to a far-infrared region.

The invention relates to an optically variable security element (12) for securing security papers, value documents and other value items, comprising at least one color-changing multilayer interference layer element (22) having a reflective layer (28), at least one absorbent layer (24) and at least one dielectric spacer layer (26) between the reflective layer (28) and the at least one absorbent layer (24), due to its layered structure, the multilayer interference layer element (22) produces an intrinsic color shift effect with a first color when viewed from a first viewing direction and with a second, different color when viewed from a second viewing direction. According to the invention, a blue light absorber (32) having an absorption edge in the wavelength range of 380 nm to 460 nm is arranged above and / or below the at least one multi-layer interference layer element (22), said absorber selectively absorbing a blue light component in order to vary the intrinsic color shift effect of the at least one multi-layer interference layer element (22), the security element (12) is configured such that the security element (12) exhibits a modified color shift effect between a third color when viewed from the first viewing direction (40) and a fourth color which is different when viewed from the second viewing direction (42), the third color being different from the first color in hue and / or color purity, and the fourth color being different from the first color in hue and / or color purity. And / or the fourth color differs from the second color in hue and / or color purity.

The invention relates to the technical field of temperature monitoring, in particular to a dual-mode fused temperature demodulation method, which comprises the following steps of: extracting interference spectrum peak offset, and comparing and analyzing the interference spectrum peak offset with a first temperature wavelength curve to obtain a first temperature; determining an absorption edge wavelength, and comparing and analyzing the absorption edge wavelength with the second temperature wavelength curve to obtain a second temperature; and analyzing the first temperature and the second temperature to obtain an analyzed temperature. Independent temperature data are obtained through the first light path and the second light path respectively, the first temperature is based on the Fabry-Perot cavity, but wavelength shift caused by temperature change obtained based on the Fabry-Perot cavity possibly spans multiple interference periods, demodulation blur is caused, the second temperature is demodulated through the absorption edge wavelength in the second reflection spectrum, and demodulation blur is caused. The second temperature is a temperature interval, according to the temperature interval, the problem of interference spectrum overlapping in a wide temperature range is effectively solved, and high-precision temperature demodulation in the wide temperature range is achieved.

An organic semiconductor device with high image sharpness and high reliability is provided. One of a plurality of light-emitting devices is provided, which are formed by a photolithography method over an insulating layer; and the light-emitting devices include an organic compound-containing layer between a pair of electrodes; the organic compound-containing layer includes a light-emitting layer containing an emission center substance and a first substance; and the absorption edge having the longest wavelength in an absorption spectrum of the first substance is located at a wavelength shorter than 400 nm, or the first substance does not contain a condensed ring formed of only six-membered rings.

A main object of the present disclosure is to provide a cathode layer capable of suppressing an initial-resistance of a battery. The present disclosure achieves the object by providing a cathode layer to be used for a lithium ion secondary battery, the cathode layer comprising: a cathode active material and a carbon nanotube, wherein the cathode active material contains a lithium-nickel-based complex oxide including at least a Li element, a Ni element, an O element, and an X element of which valence is 1 or 2 (excluding Li element and Ni element), and a tungsten present in at least one of inside or on the surface of the lithium-nickel-based complex oxide; the cathode active material is a secondary particle including a plurality of primary particles and a void formed among the plurality of primary particles; the cathode layer contains, as the carbon nanotube, a first carbon nanotube, at least partially included in the secondary particle; and when a spectrum in a position (10195 eV to 10206 eV) where a peak of L absorption edge of tungsten measured by an X-ray absorption fine structure analysis (XAFS) satisfies below: formula (1): (a−b) / (c−b)≤0.79; [in the formular (1), “a” represents an energy (eV) at the time when a slope of the spectrum in the range of 10195 eV to 10206 eV is the maximum; and when A designates a spectral intensity in the “a” (eV), “b” represents an energy (eV) where a spectral intensity in WO2 (tungsten oxide (IV)) in the range of 10195 eV to 10206 eV is the A; and “c” represents an energy (eV) where a spectral intensity of WO3 (tungsten oxide (VI)) in the range of 10195 eV to 10206 eV is the A.]

A temperature monitoring system includes a semiconductor member mounted onto the surface of an object having a surface whose temperature is to be monitored. The semiconductor member has a temperature-dependent bandgap with an absorption edge that varies with temperature. A light source is configured to illuminate the semiconductor member with monochromatic light. The monochromatic light has a wavelength equal to an absorption edge wavelength that is associated with the absorption edge when the semiconductor member is at a specified temperature. An imaging device is configured to receive light reflected from the semiconductor member when illuminated with the monochromatic light such that a surface temperature of the object is at the specified temperature when a change in an amount of reflected light that is received indicates that the wavelength of the monochromatic light is equal to the absorption edge wavelength at the specified temperature.

The present disclosure relates to a method for manufacturing a regenerated positive electrode active material. Provided is a technique for restoring the capacity in a degraded positive electrode active material and reducing the reaction resistance increased due to degradation without using a firing means. According to the technology disclosed herein, a method for producing a regenerated positive electrode active material is provided. The manufacturing method comprises the following steps: preparing a positive electrode active material; and grinding the positive electrode active material. The positive electrode active material includes a core particle having a layered crystal structure, and a coating portion having a rock salt crystal structure on the surface of the core particle. In this production method, at least a portion of the coated portion is separated from the core particles by grinding. The ratio (IB / IA) of the peak intensity IA at 8341 eV of the nickel (Ni)-K absorption edge as measured in XAFS analysis of the positive electrode active material before polishing to the peak intensity IB at 8341 eV of the nickel (Ni)-K absorption edge as measured in XAFS analysis of the positive electrode active material after polishing is 0.7 or less.

Light-emitting element (150) comprising: a pair of electrodes (101; 102); and a layer (130) between the pair of electrodes (101; 102), wherein the layer (130) comprises a guest material (131) and a host material (132), wherein the guest material (131) can convert a triplet excitation energy into a light emission, wherein the host material (132) comprises a pyrimidine skeleton, a pyridazine skeleton and / or a triazine skeleton, where a HOMO level of the guest material (131) is higher than a HOMO level of the host material (132), where an energy difference between a LUMO level of the guest material (131) and the HOMO level of the guest material (131) is greater than an energy difference between a LUMO level of the host material (132) and the HOMO level of the host material (132), and wherein an energy difference between the LUMO level of the host material (132) and the HOMO level of the guest material (131) is greater than or equal to a transition energy calculated from an absorption edge of an absorption spectrum of the guest material (131).

The application provides an X-ray absorption detection device, an X-ray absorption detection method, a storage medium and a computer program product; the X-ray absorption detection device comprises an X-ray source, a curved crystal, a sample table and a detector; the X-ray absorption detection device further comprises a rotation adjusting sub-device and a controller; the curved crystal and the detector are arranged on the rotation adjusting sub-device; wherein the controller is configured to determine a measurement parameter based on an absorption edge energy of a to-be-detected element through a first model; the measurement parameter comprises an optical path parameter of a Rowland circle; based on the optical path parameter, the rotation adjusting sub-device is controlled to be translated and / or rotated, so that the curved crystal and the detector are located on the optical path of the Rowland circle, and a measured sample on the sample table is located on a diffraction optical path of the Rowland circle.

To provide a light-emitting device with high emission efficiency and high reliability. A light-emitting layer of the light-emitting device includes a first substance emitting light from a doublet excited state based on f-d transition and a second substance that is a fluorescent substance. The longest-wavelength absorption edge among absorption edges in the absorption spectrum of the first substance is positioned at a wavelength shorter than the wavelength of the longest-wavelength absorption edge among absorption edges in the absorption spectrum of the second substance. The first substance has a short exciton lifetime and high exciton generation efficiency, and efficient energy transfer occurs between the first substance and the second substance; thus, the light-emitting device can have high emission efficiency and high reliability.

This invention relates to the field of photocatalytic materials and green hydrogen production technology, specifically to a g-C3N4 / Mn 0.3 Cd 0.7 S-type Z-type heterojunction photocatalyst, its preparation method and application, a g-C3N4 / Mn 0.3 Cd 0.7 The Z-type heterojunction photocatalyst of S is a 2D g-C3N4 sheet supported on 1D Mn. 0.3 Cd 0.7 A composite structure of S nanorods; wherein Mn 0.3 Cd 0.7 The (002) lattice spacing of S is 0.34 nm, the light absorption edge of the composite catalyst is 540±5 nm, the band gap is 2.35~2.55 eV, and the electrochemical double-layer capacitance is 100.85±2 μF·cm. ‑2 The elements C, N, Mn, Cd, and S are uniformly distributed in the catalyst, and the heterojunction interface forms a close contact. The catalyst has ultra-high hydrogen evolution activity, excellent cycle stability, and strong redox capability.

An electron beam accelerated using a first acceleration voltage is applied to respective positions on a sample to obtain spectra A at the respective positions, and an electron beam accelerated using a second acceleration voltage different from the first acceleration voltage is applied to the respective positions on the sample to obtain spectra B at the respective positions. Then, a spectral ratio A / B of the spectra is calculated at each of the positions to generate a waveform representing the spectral ratio A / B. The value of a spectral ratio A / B in an energy region of interest is extracted from each of the waveforms. The extracted values are mapped onto points corresponding to the respective positions on the sample, whereby a spectral map is generated. The spectral map is displayed.

The invention discloses a tunable near-infrared image sensor, the tunable near-infrared image sensor is applied to biological feature recognition, and the tunable near-infrared image sensor comprises a plurality of arrayed pixel sensing units; the pixel sensing unit comprises a semitransparent first electrode and a transparent second electrode, the total reflection second electrode is arranged opposite to the first electrode, and the total reflection second electrode and the first electrode form a microcavity used for enhancing the spectral response of a near-infrared target wave band; the photoelectric conversion layer is arranged between the first electrode and the second electrode, and a section of absorption edge of an absorption wave band of the photoelectric conversion layer serves as a near-infrared target wave band to be enhanced by the microcavity in spectral response; the optical modulation layer is used for absorbing and filtering light of other wave bands except the near-infrared target wave band and transmitting carriers, and is arranged between the first electrode and the photoelectric conversion layer; and the cavity length of the microcavity is regulated and controlled by regulating the thickness of the optical modulation layer, so that the spectral response of the near-infrared target wave band is enhanced, and the peak wave band is regulated and controlled.

[Problem] To provide an optical system having high optical performance. [Solution] This optical system includes an optical element C. The optical element C is formed by joining a first optical element A and a second optical element B, whose optical characteristics differ from each other, via an organic material. The organic material includes a photopolymerization initiator having an absorption edge wavelength of 390 nm or greater.

Light-emitting device comprising: an EL layer between a pair of electrodes, wherein the EL layer comprises a light-emitting layer, wherein the light-emitting layer comprises an organic compound comprising a naphtho[2',1':4,5]furo[2,3-b]pyrazine skeleton and a phosphorescent substance, where a T1 level of the phosphorescent substance T G lower than or equal to 2.5 eV, where the T G a T1 level is derived from an absorption edge of an absorption spectrum of the phosphorescent substance, where a difference between a T1 level of the organic compound T H and the T1 level of the phosphorescent substance T G a formula (1) is satisfied, and 0.1 eV ≦ TH − TG ≦ 0.4 eV where the T Ha Tl level is derived from an emission edge on a short wavelength side of a phosphorescence spectrum of the organic compound.

This application relates to the field of X-ray detection technology, specifically to a high-throughput X-ray multi-energy spectral detection system and method. The detection method includes preparing n filters Z with different K absorption limits. i , i∈(1,n), n≥15; the incident X-rays, after collimation, pass through each filter Z i The electrical signal S was detected after attenuation. i S i =∫η×[φ(E)×C i (E)]dE,(E min E max ); for electrical signal S i The incident X-ray energy spectrum is obtained by discretizing the spectrum and then solving for the least squares solution. Based on the detection principle of energy integration, this application achieves flexible modulation and demodulation of high-throughput X-ray energy spectra through mathematical combinations of filters with different linear attenuation coefficients, balancing detection cost with obtaining high-resolution X-ray energy spectra.

The invention discloses a lithium molybdenum chromate single crystal, a preparation method thereof and an optical filter, and belongs to the technical field of optical materials. The general chemical formula of the lithium molybdenum chromate single crystal is Li2CrxMo1-xO4, x is larger than or equal to 0.005 and smaller than or equal to 0.5, the lithium molybdenum chromate single crystal is a trigonal system, the space group is R, the lithium molybdenum chromate single crystal is in cut-off absorption at the wavelength of 500 nm or below, the lithium molybdenum chromate single crystal has high transmittance from 500 nm or above to the infrared band, the room-temperature heat conductivity is 4 W * m <-1 > * K <-1 >, and the lithium molybdenum chromate single crystal is suitable for manufacturing 500 nm long-wave-pass optical filters high in stability and reliability. According to the invention, a proper amount of hexavalent chromium (Cr < 6 + >) is introduced into a lithium molybdate matrix, and an absorption edge can be moved and a required long-wave-pass characteristic can be formed by regulating and controlling the content of hexavalent chromium; meanwhile, the oxide crystal is more suitable for high-power transmission and optical application in a harsh environment due to high thermal conductivity and mechanical stability, and the problem that an existing thin film and a polymer optical filter are insufficient in thermal stability and high-power bearing is solved.

An inspection apparatus includes a light source unit, cameras, a keyboard, and a controller that determines a wavelength of the excitation light, based on the information on the emission color received by the keyboard, and that controls the light source unit so that the light source unit generates excitation light with the determined wavelength. The controller determines a wavelength longer than an absorption edge wavelength of the substrate of the sample and shorter than a peak wavelength of an emission spectrum of the light-emitting element, the peak wavelength being specified from the information on the emission color, to be the wavelength of the excitation light.