251 results about "Absorption edge" patented technology

There are provided an infrared transmission filter, which is inexpensive, is capable of being sufficiently made lighter and thinner, has no incident angle dependency, and is excellent in permselectivity for infrared light, and an imaging device, which employs such an infrared transmission filter.

An infrared transmission filter 10 includes an infrared transmission base material 1 selectively transmitting light in an infrared wavelength range; and a short wavelength side infrared absorbing film 2 formed on one side of the infrared transmission base material 1 and containing a near-infrared absorbent having an optical absorption edge on a short wavelength side of a transmission wavelength band of the infrared transmission base material. An imaging device includes the infrared transmission filter 10.

An organic electroluminescence device of the present invention comprises a light emitting layer held between electrodes, the light emitting layer containing at least a host material and a dye or pigment. The light emitting layer further comprises an additive exhibiting an absorption edge of which energy level is higher than that of an absorption edge of the dye or pigment, but the difference of the energy levels being less than 120 kJ/mol, having no lone pair, and including at least two aromatic rings. The additive of the present invention is selected from a group consisting of phenyl-substituted anthracenes, naphthyl-substituted anthracenes, naphthyl-substituted naphthalenes, pyrenes, and a naphthacene derivatives.

A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

A non-aqueous secondary battery of the present invention includes a positive electrode, a negative electrode and a non-aqueous electrolyte. The positive electrode includes a positive electrode material mixture layer containing a lithium-containing transition metal oxide. The negative electrode includes a negative electrode material mixture layer and a porous layer containing an insulating material unreactive with lithium formed thereon. The negative electrode material mixture layer includes a negative electrode material including a core and a carbon covering layer covering a surface of the core. The core includes a material containing silicon and oxygen at an atomic ratio x of the oxygen to the silicon of 0.5≦×≦1.5. The material containing silicon and oxygen has a peak at least in a range of 1850 to 1860 eV in an X-ray absorption near edge structure spectrum at the K absorption edge of Si in a state in which discharge of the battery is finished.

An optical method for measuring the temperature of a substrate material with a temperature dependent band edge. In this method both the position and the width of the knee of the band edge spectrum of the substrate are used to determine temperature. The width of the knee is used to correct for the spurious shifts in the position of the knee caused by: (i) thin film interference in a deposited layer on the substrate; (ii) anisotropic scattering at the back of the substrate; (iii) the spectral variation in the absorptance of deposited layers that absorb in the vicinity of the band edge of the substrate; and (iv) the spectral dependence in the optical response of the wavelength selective detection system used to obtain the band edge spectrum of the substrate. The adjusted position of the knee is used to calculate the substrate temperature from a predetermined calibration curve. This algorithm is suitable for real-time applications as the information needed to correct the knee position is obtained from the spectrum itself. Using a model for the temperature dependent shape of the absorption edge in GaAs and InP, the effect of substrate thickness and the optical geometry of the method used to determine the band edge spectrum, are incorporated into the calibration curve.

A lithography apparatus having achromatic Fresnel objective (AFO) that combines a Fresnel zone plate and a refractive Fresnel lens. The zone plate provides high resolution for imaging and focusing, while the refractive lens takes advantage of the refraction index change properties of appropriate elements near absorption edges to recombine the electromagnetic radiation of different energies dispersed by the zone plate. This compound lens effectively solves the high chromatic aberration problem of zone plates. The lithography apparatus allows the use of short wavelength radiation in the 1-15 nm spectral range to print high resolution features as small as 20 nm.

The present invention provides an electrophotographic photoconductor which contains a substrate, at least a photosensitive layer and a surface layer being formed on the substrate in this order; the surface layer contains a cured material which is cured by irradiating with light a trifunctional or more radical polymerizable monomer having no electric charge transportable structure, a radical polymerizable monomer having an electric charge transportable structure, and a photo-radical polymerization initiator; the photo-radical polymerization initiator contains a titanocene derivative; and the relation between the absorption edge wavelength HA (nm) in the light absorption spectrum of the radical polymerization initiator and the absorption edge wavelength HB (nm) in the light absorption spectrum of the radical polymerizable monomer having an electric charge transportable structure is represented by HA>HB and satisfies HA−HB>40 nm.

Aluminophosphate glasses containing copper(II) oxide having a low transmission in the near infrared range with a steep absorption edge, as well as a very uniform high transparency in the visible range and excellent chemical durability under conditions of exposure to elevated temperature and high relative humidity, are particularly suitable as filter glasses for use in CCD and CMOS camera and detector applications and as filter glass, e.g., for goggles and color displays. The glass comprising, in % by weight on an oxide basis: 65-80 of P₂O₅; 4-20 of Al₂O₃; 0-<5.5 of B₂O₃, 0-2.1 of La₂O₃; 0-2.1 of Y₂O₃, 0-3 of SiO₂; >2-12.5 of Li₂O; 0-6 of Na₂O; 0-4 of K₂O; 0-2.5 of Rb₂O; 0-2.5 of Cs₂O; 0-7.9 of MgO; 0-5 of CaO; 0-5 of SrO; 0-10 of BaO; 0-8 of ZnO; 0-5 ZrO₂, 5-15 of CuO; and 0-0.5 of V₂O₅, wherein the sum of alkaline-earth metal oxides+ZnO (ΣR′O) is <18; and the sum of CuO+V₂O₅ is 5-15.

A photovoltaic element for conversion of electromagnetic radiation to electrical energy, having at least one first electrode, at least one n-semiconductive metal oxide, at least one dye for absorption of electromagnetic radiation, at least one organic hole conductor material, and at least one second electrode. The organic hole conductor material has an absorption spectrum which has a maximum in the ultraviolet or blue spectral region and, toward higher wavelengths, an absorption edge declining with wavelength and having a characteristic wavelength λ_HTL. A decadic absorbance of the hole conductor material at a wavelength λ_HTL within the declining absorption edge is 0.3. The photovoltaic element includes a longpass filter, which has a transmission edge rising with wavelength and having a characteristic wavelength λ_LP. A transmission of the longpass filter at λ_LP is 50% of a maximum transmission of the longpass filter, where λ_HTL−30 nm≦λ_LP≦λ_HTL+30 nm.

A lithium mixed metal oxide containing Li, Mn and M (M represents at least one metal element, and is free from Li or Mn), and having a peak around 1.5 Å (peak A), a peak around 2.5 Å (peak B), and the value of I_B/I_A is not less than 0.15 and not more than 0.9 in a radial distribution function obtained by subjecting an extended X-ray absorption fine structure (EXAFS) spectrum at K absorption edge of Mn in the oxide to the Fourier transformation, wherein I_A is the intensity of peak A and I_B is the intensity of peak B.

A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorption edge wavelength, λ_ga, equal to or longer than the absorption edge wavelength, λ_gr, of the absorption layer (λ_ga≧λ_gr).

A method of producing a substrate (12) for a plasma display panel, which comprises the steps of: contacting a rib precursor composition (32) containing a first photo-setting initiator having a first absorption edge and a first photo-setting component, closely with a base (12); filling a mold (30), obtained by photo-setting of a second photo-setting component in a presence of a second photo-setting initiator having a second absorption edge whose wavelength is shorter than that corresponding to the first absorption edge of the first photo-setting initiator, with the rib precursor composition (32); irradiating the rib precursor composition (32) with light having a wavelength longer than that corresponding to the second absorption edge to set the rib precursor composition (32), thereby forming a rib (34) on the base (12); and removing the mold (30) from the resulting base (12) on which the rib (34) is formed.

A fuel analysis system and method wherein an x-ray source emits x-rays at an energy level below but proximate the absorption edge of sulfur. A monochromator is in the optical path between the source and a fuel sample for directing x-rays at a single energy level at the fuel sample to limit excitation of any sulfur in the fuel sample. A detector is responsive to x-rays emitted by the sample and an analyzer is responsive to the detector and configured to determine the amount of silicon and aluminum in the sample.

A method of processing an optical device wafer having an optical device layer including an n-type semiconductor layer and a p-type semiconductor layer stacked over a sapphire substrate, a buffer layer therebetween, allowing peeling of the sapphire substrate. The method includes joining a transfer substrate to the optical device layer, breaking the buffer layer by irradiation with a pulsed laser beam from the sapphire substrate side of the wafer with the transfer substrate joined to the optical device layer, and peeling the sapphire substrate from the optical device wafer with the buffer layer broken, transferring the optical device layer onto the transfer substrate. The pulsed laser beam has a wavelength longer than an absorption edge of the sapphire substrate and shorter than an absorption edge of the buffer layer, and a pulse width set so that a thermal diffusion length will be not more than 200 nm.

In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10¹³ cm⁻²eV⁻¹ or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

The subject invention relates to a technique employing a calibrated thermal radiometer, and the radiation characteristics of ionic crystals to measure the temperature distribution of crystals during crystal growth. When in high temperature, the ionic crystals often exhibit a transparent region having low reflectance, and low absorption in the spectrum between the short-wavelength absorption edge and the long-wavelength absorption edge. In addition, these crystals have an opaque spectral region having low reflectance and high absorption, i.e. have surface radiation of high emissivity when the spectrum is in the range between the long-wavelength absorption edge and the onset of the Reststrahlen band. The spectral emissivity of the ionic crystal may not change significantly with a variation of temperature in this opaque region. According to Planck's law, the surface temperature distribution during crystal growth can be obtained after the surface radiation of the opaque region is detected, and the emissivity at the melting point is calculated.