30results about How to "Prevent Optical Crosstalk" patented technology

A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorption edge wavelength, λga, equal to or longer than the absorption edge wavelength, λgr, of the absorption layer (λga≧λgr).

A micro light emitting element includes: a body including a compound semiconductor layer in which a first conductive layer, a light emission layer, and a second conductive layer with a conductive type opposite to a conductive type of the first conductive layer are stacked in order from a light emitting surface side; a first electrode including a transparent electrode on the light emitting surface side; a second electrode including a metal film on a side opposite to the light emitting surface side; and a first reflective material covering a side surface of the body. The light emission layer is disposed on the light emitting surface side of the body. The side surface of the body is tapered at an inclination angle to open in a light emitting direction.

The invention discloses a CMOS image sensor pixel unit. Because a signal output line, a control line and a power line which are made of same metal are adopted in a dielectric layer and distributed on the same dielectric layer above the rows or columns of photosensitive elements of pixel arrays in a staggering and bridging mode, the thickness of the dielectric layer is remarkably reduced, and therefore loss caused before incident light reaches the photosensitive elements is reduced, the sensitivity of the pixel unit is effectively improved; light shielding rings are arranged around the photosensitive elements, optical crosstalk between the pixel units is effectively prevented, and due to the use of an image sensor, high-quality images can be obtained under a low-illumination condition.

An optical modulator includes a first optical modulation section and a second optical modulation section which use modulation signals different from each other when applying a modulation signal to the modulation electrode and performing optical modulation. In addition, a light-receiving element is disposed on a substrate, and the light-receiving element has a first light-receiving section that detects optical signal propagating from a first waveguide which guides the optical signal output from the first optical modulation section. In addition, the light-receiving element also has a second light-receiving section that detects an optical signal propagating through a second waveguide which guides the optical signal output from the second optical modulation section.

The invention relates to the field of display screens, in particular to a light guide structure of a flat panel display and a flat panel display with the light guide structure. The light guide structure is used to set the light emitting surface of the flat panel display panel, which includes an incident surface for introducing the outgoing light of the flat panel display panel and a light exit surface for emitting light, and several optical panels are arranged between the incident surface and the light exit surface. In the light guide part, a diffusion layer is provided on the light emitting surface, a partition part is provided between the optical light guide part, and a reflective layer is also provided between the optical light guide part and the partition part. The optical light guide part in the light guide structure corresponds to the light emitted from a single or multiple display pixels on the flat panel display panel. The light enters the optical light guide part after exiting from the surface of the flat panel display panel. After multiple reflections in the part, it enters the diffusion layer through the light-emitting surface, and finally exits from the diffusion layer. The invention can well solve the problems of color shift and small viewing angle of the flat-panel display when it is used on the flat-panel display.

An image sensor and its forming method, the image sensor includes: a first substrate, the first substrate includes opposite first surfaces and second surfaces, the first substrate includes several mutually separated pixel regions, and adjacent an isolation area between the pixel areas; a first reflective structure located on the second surface of the first substrate; a second reflective structure located in the isolation area, and the second reflective structure penetrates from the first surface to the second surface; a second substrate located on the surface of the first reflective structure, the second substrate includes opposite third surfaces and fourth surfaces, the third surface is in contact with the surface of the first reflective structure, There are several floating diffusion regions separated from each other in the second substrate; a conductive plug located in the second substrate, the conductive plug penetrates from the pixel region into the second substrate, and the The conductive plug is electrically connected with the floating diffusion area and the pixel area. The imaging quality of the image sensor is relatively good.

The invention relates to an image sensor and a manufacturing method thereof, wherein the image sensor comprises a semiconductor substrate, a euphotic layer, a lightproof layer, metal layers and a conductive plug. A pixel array is arranged in the semiconductor substrate, a pixel comprises a light sensitive unit, and adjacent pixels are separated by a low trench insulating structure; the euphotic layer is arranged on the surface of the semiconductor substrate and is aligned to the light sensitive unit; the lightproof layer is arranged on the surface of the semiconductor substrate and surrounds the euphotic layer; the metal layers are arranged in the lightproof layer; and the conductive plug is used for connecting adjacent metal layers. The image sensor can effectively prevent incident lightfrom entering other light sensitive units so as to avoid the generation of optical crosstalk, and the image display quality of pixels of the image sensor is improved.

The invention discloses a narrow-slit spliced assembly of multi-waveband filters applied at a low temperature. The narrow-slit spliced assembly comprises a support plate, an installation limiting plate, the multi-waveband filters and an upper cover plate, wherein a plurality of light through holes are formed on the support plate and the upper cover plate; a plurality of optical filter installation grooves are formed on the installation limiting plate. During installation, a plurality of filters at different wavebands can be put in the installation grooves of the installation limiting plate in one time, thereby realizing precise assembly of the filters by using limiting barrier strips. In such a structure, the support plate, the installation limiting plate and the upper cover plate are all made from low-expansion alloy materials, and need surface blackening treatment before assembly, and a glue used for assembly is a low temperature resistant glue. The assembly has a low requirement on preparation of the multi-waveband filters, is simple in structure, low in optical crosstalk among channels and high in structural reliability, and can realize one-time cementing assembly of the optical filter at each waveband with a small splicing slit of the filters and high assembly precision.