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30results about How to "Prevent Optical Crosstalk" patented technology
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Method for isolation of independent, parallel chemical micro-reactions using a porous filter
InactiveUS20060088857A1Fast reagent exchangeFast deliveryBioreactor/fermenter combinationsSequential/parallel process reactionsChemical reactionDna amplification
The present invention relates to methods and apparatuses for conducting densely packed, independent chemical reactions in parallel in fluid-permeable arrays. Accordingly, this invention also focuses on the use of such arrays for applications such as DNA sequencing, most preferably pyrophosphate sequencing, and DNA amplification.
Owner:454 LIFE SCIENCES CORP
Stacked rows pseudo-randomly spaced two-dimensional phased array assembly
ActiveUS9557585B1Easy to divergePrevent optical crosstalkSemiconductor/solid-state device detailsSolid-state devicesEngineeringPhased array
A phased array that comprises a predetermined number of emitter / receiver elements; said emitter / receiver elements being arranged on a array formed of stacked rows, wherein the emitter / receiver elements in each row of the array are distributed according to a pseudo-random pattern; and the heights of the rows vary according to a pseudo-random pattern.
Owner:HRL LAB
Front-illuminated-type photodiode array
ActiveUS20050194654A1Prevent optical crosstalkAvoid reflectionsSolid-state devicesRadiation controlled devicesLength wavePhotodiode
A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorption edge wavelength, λga, equal to or longer than the absorption edge wavelength, λgr, of the absorption layer (λga≧λgr).
Owner:SUMITOMO ELECTRIC IND LTD
Bidirectional optical transceiver
InactiveUS20100086310A1Prevent thermalAvoid electricityLaser detailsSolid-state devicesHigh resistanceElectricity
A bidirectional optical transceiver is disclosed. In the bidirectional optical transceiver, by implementing, as a stacked structure, an optical bench in which an optical system and an optical-transmitting module are installed and a multi-layer substrate with good thermal, electrical and high-resistance characteristics in which an optical-receiving module and a driving circuit for driving the optical-transmitting module are installed, thermal, electrical or optical crosstalk is prevented, high-speed transmission of transmission signals is possible through high-speed modulation thereof, and miniaturization is achieved.
Owner:ELECTRONICS & TELECOMM RES INST
Rear-illuminated-type photodiode array
ActiveUS20050199976A1Prevent optical crosstalkOptical obstructionSolid-state devicesSemiconductor devicesAnti-reflective coatingSemiconductor
A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.
Owner:SUMITOMO ELECTRIC IND LTD
Image sensor and method for fabricating the same
InactiveUS20140159184A1Prevent optical crosstalkImprove quantum efficiencySolid-state devicesSemiconductor/solid-state device manufacturingOptoelectronicsImage sensor
An image sensor includes a substrate including a plurality of unit pixel regions, a color filter formed over the substrate so as to correspond to each of the unit pixel regions, and a light absorption unit formed in the substrate under the color filter.
Owner:SK HYNIX INC
Backside illuminated complementary metal-oxide-semiconductor transistor (CMOS) imaging sensor and preparation method thereof
InactiveCN103094298APrevent Optical CrosstalkEliminate Optical CrosstalkRadiation controlled devicesCMOSEngineering
The invention discloses a backside illuminated complementary metal-oxide-semiconductor transistor (CMOS) imaging sensor which comprises a semiconductor substrate. The semiconductor substrate comprises at least two pixel unit areas. The semiconductor substrate is provided with a front face and a back face which is opposite to the front face, at least two pixels are formed on the front face of the semiconductor substrate, and one pixel is arranged inside each pixel unit area. Grooves are formed in the back face of the semiconductor substrate, and the grooves are placed between every two adjacent pixel unit areas. An insulating layer is formed on the back face of the semiconductor substrate, and air gaps are formed by the insulating layer and the grooves. An optical filter and a micro lens are sequentially formed on the insulating layer. Meanwhile, the invention further provides a preparation method of the backside illuminated CMOS imaging sensor. The backside illuminated CMOS imaging sensor is adopted, light rays can be reduced or can be prevented from entering into the adjacent pixel unit areas, the phenomenon of optical crosstalk to the adjacent pixel unit areas can be avoided, and the fineness quality of the backside illuminated CMOS imaging sensor is improved.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Narrow-slit spliced assembly of multi-waveband filters applied at low temperature
The invention discloses a narrow-slit spliced assembly of multi-waveband filters applied at a low temperature. The narrow-slit spliced assembly comprises a support plate, an installation limiting plate, the multi-waveband filters and an upper cover plate, wherein a plurality of light through holes are formed on the support plate and the upper cover plate; a plurality of optical filter installation grooves are formed on the installation limiting plate. During installation, a plurality of filters at different wavebands can be put in the installation grooves of the installation limiting plate in one time, thereby realizing precise assembly of the filters by using limiting barrier strips. In such a structure, the support plate, the installation limiting plate and the upper cover plate are all made from low-expansion alloy materials, and need surface blackening treatment before assembly, and a glue used for assembly is a low temperature resistant glue. The assembly has a low requirement on preparation of the multi-waveband filters, is simple in structure, low in optical crosstalk among channels and high in structural reliability, and can realize one-time cementing assembly of the optical filter at each waveband with a small splicing slit of the filters and high assembly precision.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Image display element
ActiveUS20200343410A1Optical crosstalkImproved light emissionStatic indicating devicesSolid-state devicesEngineeringWavelength conversion
In an image display element, a side surface of a nitride semiconductor is covered with a reflection material inclined so as to open in a light emitting direction, wavelength conversion units are surrounded by partition walls, and side surfaces of the partition walls facing the wavelength conversion units are reflection surfaces inclined so as to open in the light emitting direction.
Owner:SHARP KK
Polarization system and three-dimensional image display apparatus having the same
ActiveUS20130141654A1Prevent optical crosstalkAvoid discomfortSteroscopic systemsNon-linear opticsOptoelectronicsOptical polarization
A 3D image display apparatus featuring a new polarization system is introduced which minimizes crosstalk between stereoimages. The polarization system includes a shutter panel that shifts the phase of an incident light, a polarizing film disposed between the shutter panel and an observer, a first retardation film disposed between the shutter panel and the polarizing film, a second retardation film disposed between the polarizing film and the first retardation film to correspond to the left eye of the observer, and a third retardation film disposed between the polarizing film and the first retardation film to correspond to the right eye of the observer.
Owner:SAMSUNG DISPLAY CO LTD
Micro light emitting element and image display device
ActiveUS20210020619A1Prevent optical crosstalkImprove luminous efficiencySolid-state devicesSemiconductor devicesLight emissionMaterials science
A micro light emitting element includes: a body including a compound semiconductor layer in which a first conductive layer, a light emission layer, and a second conductive layer with a conductive type opposite to a conductive type of the first conductive layer are stacked in order from a light emitting surface side; a first electrode including a transparent electrode on the light emitting surface side; a second electrode including a metal film on a side opposite to the light emitting surface side; and a first reflective material covering a side surface of the body. The light emission layer is disposed on the light emitting surface side of the body. The side surface of the body is tapered at an inclination angle to open in a light emitting direction.
Owner:SHARP FUKUYAMA LASER CO LTD
OLED display panel and display device
ActiveCN111564571APrevent Optical CrosstalkImprove the display effectSolid-state devicesSemiconductor/solid-state device manufacturingColor filmDisplay device
The invention provides an OLED display panel and a display device. The OLED display panel comprises a substrate layer and a display base material layer which are stacked, wherein the display base material layer comprises a switching device layer, an organic light-emitting device layer, a packaging layer and a color film layer which are stacked; a waveguide film locking layer is also arranged between the organic light-emitting device layer and the color film layer; the waveguide film locking layer comprises an inner reflection film layer, and at least one first refraction film layer is arrangedat the side, close to the color film layer, of the inner reflection film layer; at least one second refraction film layer is arranged at the side, close to the organic light-emitting device layer, ofthe inner reflection film layer. The refractive index of the first refraction film layer and the refractive index of the second refraction film layer are both lower than the refractive index of the inner reflection film layer. The waveguide film locking layer changes the propagation direction of lateral light and limits the propagation direction in the inner reflecting film layer by utilizing thetotal reflection principle from light density to light sparseness, and lateral light emission is effectively controlled, so that optical crosstalk among different pixels is solved, the problems of poor viewing angle and color separation are avoided, and the display effect is improved.
Owner:BOE TECH GRP CO LTD
Front-illuminated-type photodiode array
ActiveUS7274081B2Prevent optical crosstalkAvoid reflectionsSolid-state devicesRadiation controlled devicesAnti-reflective coatingLength wave
Owner:SUMITOMO ELECTRIC IND LTD
Preparation method of OLED and LED hybrid display panel and display panel
PendingCN111816687ALow efficiencyImprove efficiencySolid-state devicesSemiconductor devicesOrganic light emitting deviceGreen-light
The invention discloses a preparation method of an OLED and LED hybrid display panel and the display panel. The preparation method of the display panel comprises steps of forming an LED electrode, a first lap joint electrode and a second lap joint electrode on a driving back plate, forming a pixel definition layer, and exposing the LED electrode, one part of the first lap joint electrode and one part of the second lap joint electrode; forming a first reflection electrode in the green sub-pixel region on the surface of one side, far away from the driving back plate, of the pixel definition layer, forming a second reflection electrode and an optical adjustment layer in the red sub-pixel region, and forming a third reflection electrode in the blue sub-pixel region on the side surface, connected with the LED electrode, of the pixel definition layer; transferring the blue-light LED chip to a driving back plate and correspondingly and electrically connecting the blue-light LED chip with theLED electrode; and forming a green light organic light emitting device and a red light organic light emitting device. The method is advantaged in that the optical crosstalk of a blue-light LED chip isreduced.
Owner:GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
Optical element adjusting frame
The invention relates to the technical field of optics, and discloses an optical element adjusting frame which is used for independently adjusting and locking all dimensions and improving the convenience and stability of operation while avoiding optical crosstalk. The adjusting frame comprises a supporting frame, a first driving mechanism and a second driving mechanism, wherein the supporting frame is provided with a translation ring, the first driving mechanism drives the translation ring to translate towards the X axis, and the second driving mechanism drives the translation ring to translate towards the Y axis. A translation ring is connected with the connecting ring through internal threads. A connecting ring is coupled with the optical element mounting ring, the front knob, the limiting ring, the locking ring, the translation ring and the rear knob. A first jackscrew is arranged between the limiting ring and the front knob, and a second jackscrew is arranged between the locking ring and the rear knob. When the second jackscrew is locked and the first jackscrew is loosened, the optical element mounting ring is driven to translate in the Z-axis direction by rotating the front knob. When the first jackscrew is locked and the second jackscrew is loosened, the rear knob is rotated to drive the optical element mounting ring to rotate around the Z axis.
Owner:长沙麓邦光电科技有限公司
Image sensor and formation method of the same
InactiveCN108417595ALow costReduce process complexitySolid-state devicesRadiation controlled devicesDielectric layerSemiconductor
The invention relates to an image sensor and formation method of the same. The formation method of the image sensor includes the steps: providing a semiconductor substrate, wherein a dielectric layeris formed on the surface of the semiconductor substrate; forming a trench in the dielectric layer, wherein the opening of the trench is located at the surface of the dielectric layer; forming a dielectric film which covers the dielectric layer and seals the opening of the trench so as to form air gaps; removing the dielectric film among the adjacent air gaps and at least one part of the dielectriclayer among the adjacent air gaps so as to form a filter groove; and forming a filter in the filter groove. The scheme of the formation method of the image sensor has the advantages of preventing optical crosstalk, reducing the production cost, avoiding formation of metal pollution, reducing loss of incident light, improving photosensitivity of the image sensor at the same time.
Owner:HUAIAN IMAGING DEVICE MFGR CORP
Micro light emitting element and image display device
ActiveUS11398464B2Prevent optical crosstalkImprove luminous efficiencySolid-state devicesSemiconductor devicesLight emissionMaterials science
A micro light emitting element includes: a body including a compound semiconductor layer in which a first conductive layer, a light emission layer, and a second conductive layer with a conductive type opposite to a conductive type of the first conductive layer are stacked in order from a light emitting surface side; a first electrode including a transparent electrode on the light emitting surface side; a second electrode including a metal film on a side opposite to the light emitting surface side; and a first reflective material covering a side surface of the body. The light emission layer is disposed on the light emitting surface side of the body. The side surface of the body is tapered at an inclination angle to open in a light emitting direction.
Owner:SHARP FUKUYAMA LASER CO LTD
CMOS image sensor pixel unit
ActiveCN104465687AReduce thicknessPrevent Optical CrosstalkRadiation controlled devicesCMOSIlluminance
The invention discloses a CMOS image sensor pixel unit. Because a signal output line, a control line and a power line which are made of same metal are adopted in a dielectric layer and distributed on the same dielectric layer above the rows or columns of photosensitive elements of pixel arrays in a staggering and bridging mode, the thickness of the dielectric layer is remarkably reduced, and therefore loss caused before incident light reaches the photosensitive elements is reduced, the sensitivity of the pixel unit is effectively improved; light shielding rings are arranged around the photosensitive elements, optical crosstalk between the pixel units is effectively prevented, and due to the use of an image sensor, high-quality images can be obtained under a low-illumination condition.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
Optical modulator
An optical modulator includes a first optical modulation section and a second optical modulation section which use modulation signals different from each other when applying a modulation signal to the modulation electrode and performing optical modulation. In addition, a light-receiving element is disposed on a substrate, and the light-receiving element has a first light-receiving section that detects optical signal propagating from a first waveguide which guides the optical signal output from the first optical modulation section. In addition, the light-receiving element also has a second light-receiving section that detects an optical signal propagating through a second waveguide which guides the optical signal output from the second optical modulation section.
Owner:SUMITOMO OSAKA CEMENT CO LTD
A cmos image sensor pixel unit array
ActiveCN104465687BReduce thicknessPrevent Optical CrosstalkRadiation controlled devicesCMOSIlluminance
The invention discloses a CMOS image sensor pixel unit. Because a signal output line, a control line and a power line which are made of same metal are adopted in a dielectric layer and distributed on the same dielectric layer above the rows or columns of photosensitive elements of pixel arrays in a staggering and bridging mode, the thickness of the dielectric layer is remarkably reduced, and therefore loss caused before incident light reaches the photosensitive elements is reduced, the sensitivity of the pixel unit is effectively improved; light shielding rings are arranged around the photosensitive elements, optical crosstalk between the pixel units is effectively prevented, and due to the use of an image sensor, high-quality images can be obtained under a low-illumination condition.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
Image sensor and forming method thereof
ActiveCN110112162AImprove image qualityPrevent Optical CrosstalkSolid-state devicesDiodeImaging qualityOptoelectronics
The invention relates to an image sensor and a forming method thereof, and the image sensor comprises a first substrate, wherein the first substrate comprises a first surface and a second surface which are opposite to each other, the first substrate comprises a plurality of pixel regions which are separated from each other, and an isolation region located between adjacent pixel regions; a first reflecting structure which is located on the surface of the second surface of the first substrate; a second reflection structure which is located in the isolation region, wherein the second reflection structure penetrates from the first surface to the second surface; a second substrate which is located on the surface of the first reflection structure, wherein the second substrate comprises a third surface and a fourth surface which are opposite to each other, and the third surface is in contact with the surface of the first reflection structure, and a plurality of floating diffusion regions which are separated from one another are arranged in the second substrate; and a conductive plug which is located in the second substrate, penetrates into the second substrate from the pixel region, and is electrically connected with the floating diffusion region and the pixel region. The imaging quality of the image sensor is good.
Owner:淮安西德工业设计有限公司
Color filter, image sensor, and imaging apparatus
PendingCN114167650AAdjustable frequencyAdjust the refractive indexStatic indicating devicesSolid-state devicesColor gelRefractive index
The invention relates to a color filter, an image sensor and an image pickup device. The light filtering module comprises a color light filter and a control assembly, the color filter comprises a first substrate, a metasurface structure, a dielectric layer and a second substrate, the metasurface structure is located on the first substrate, the metasurface structure comprises a plurality of microstructures arranged periodically, and the dielectric layer is located on the side, away from the first substrate, of the metasurface structure and covers the metasurface structure; the refractive index of the dielectric layer is different from that of the metasurface structure; the second substrate is located at one side of the dielectric layer away from the first substrate; the control assembly is configured to adjust the refractive index of the dielectric layer so as to adjust the wavelength of visible light passing through the color filter. According to the embodiment of the invention, the spectral line of the light passing through the color filter is narrower, the color is purer, when the filtering module is used for the image sensor, optical crosstalk can be avoided, and the frequency of the light passing through the filtering module can be adjustable and variable.
Owner:BOE TECH GRP CO LTD
Multilens integration component for low temperature application
PendingCN109254379AHighly integratedGuaranteed horizontal installation accuracy and axial installation accuracyMountingsRoom temperatureEngineering
The invention discloses a multilens integration component for low temperature application, comprising parts such as a lens group array, a horizontal locating piece, an isolation block and a lens support. The horizontal locating piece is mounted on the isolation block, the isolation block is mounted on the lens support, and a lens array passes through the horizontal locating piece and the isolationblock and is mounted on the lens support. Horizontal mounting accuracy of a lens group is guaranteed by virtue of the horizontal locating piece, and axial mounting accuracy of the lens group is guaranteed by virtue of planeness of a lens mounting surface of the lens support. The support is simple in structure, the lens group is easy to mount, and location accuracy is high, so that the multilens integration component disclosed by the invention is applicable to assembly of a lens group applied at room temperature and low temperature.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Optical modulator
Owner:SUMITOMO OSAKA CEMENT CO LTD
A light guide structure of a flat panel display and a flat panel display with the light guide structure
InactiveCN103941326BAvoid color castImprove the display effectOptical light guidesLight guideDisplay device
The invention relates to the field of display screens, in particular to a light guide structure of a flat panel display and a flat panel display with the light guide structure. The light guide structure is used to set the light emitting surface of the flat panel display panel, which includes an incident surface for introducing the outgoing light of the flat panel display panel and a light exit surface for emitting light, and several optical panels are arranged between the incident surface and the light exit surface. In the light guide part, a diffusion layer is provided on the light emitting surface, a partition part is provided between the optical light guide part, and a reflective layer is also provided between the optical light guide part and the partition part. The optical light guide part in the light guide structure corresponds to the light emitted from a single or multiple display pixels on the flat panel display panel. The light enters the optical light guide part after exiting from the surface of the flat panel display panel. After multiple reflections in the part, it enters the diffusion layer through the light-emitting surface, and finally exits from the diffusion layer. The invention can well solve the problems of color shift and small viewing angle of the flat-panel display when it is used on the flat-panel display.
Owner:GUANGDONG VTRON TECH CO LTD
Image sensor and method of forming the same
ActiveCN110112162BImprove image qualityPrevent Optical CrosstalkSolid-state devicesDiodeImaging qualityEngineering
An image sensor and its forming method, the image sensor includes: a first substrate, the first substrate includes opposite first surfaces and second surfaces, the first substrate includes several mutually separated pixel regions, and adjacent an isolation area between the pixel areas; a first reflective structure located on the second surface of the first substrate; a second reflective structure located in the isolation area, and the second reflective structure penetrates from the first surface to the second surface; a second substrate located on the surface of the first reflective structure, the second substrate includes opposite third surfaces and fourth surfaces, the third surface is in contact with the surface of the first reflective structure, There are several floating diffusion regions separated from each other in the second substrate; a conductive plug located in the second substrate, the conductive plug penetrates from the pixel region into the second substrate, and the The conductive plug is electrically connected with the floating diffusion area and the pixel area. The imaging quality of the image sensor is relatively good.
Owner:淮安西德工业设计有限公司
Image sensor and manufacturing method thereof
The invention relates to an image sensor and a manufacturing method thereof, wherein the image sensor comprises a semiconductor substrate, a euphotic layer, a lightproof layer, metal layers and a conductive plug. A pixel array is arranged in the semiconductor substrate, a pixel comprises a light sensitive unit, and adjacent pixels are separated by a low trench insulating structure; the euphotic layer is arranged on the surface of the semiconductor substrate and is aligned to the light sensitive unit; the lightproof layer is arranged on the surface of the semiconductor substrate and surrounds the euphotic layer; the metal layers are arranged in the lightproof layer; and the conductive plug is used for connecting adjacent metal layers. The image sensor can effectively prevent incident lightfrom entering other light sensitive units so as to avoid the generation of optical crosstalk, and the image display quality of pixels of the image sensor is improved.
Owner:GALAXYCORE SHANGHAI
A narrow-slit splicing assembly of multi-band optical filters applied at low temperature
ActiveCN104035177BImprove performanceReduce Size InterferenceMountingsMulti bandStructural reliability
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Polarization system and three-dimensional image display apparatus having the same
ActiveUS9019438B2Reduce crosstalkAvoid discomfortSteroscopic systemsNon-linear opticsOptoelectronicsOptical polarization
A 3D image display apparatus featuring a new polarization system is introduced which minimizes crosstalk between stereoimages. The polarization system includes a shutter panel that shifts the phase of an incident light, a polarizing film disposed between the shutter panel and an observer, a first retardation film disposed between the shutter panel and the polarizing film, a second retardation film disposed between the polarizing film and the first retardation film to correspond to the left eye of the observer, and a third retardation film disposed between the polarizing film and the first retardation film to correspond to the right eye of the observer.
Owner:SAMSUNG DISPLAY CO LTD
Bank printing liquid, Bank preparation method and ink-jet printer
InactiveCN112251074APrevent Optical CrosstalkMeet the needs of the displayInksOther printing apparatusLED displayComputer printing
The invention relates to the technical field of ink-jet printing, and particularly discloses printing liquid for printing Bank, the printing liquid comprises ink, and the ink comprises the following components: 5%-30% of absorptive filler or light reflective filler; 15-30% of an optical resin; 3-10% of a dispersion matrix; 0.5-3% of a photoinitiator; 5-15% of a thermosetting resin; and a solvent.Further, an inkjet printer and a Bank preparation method using the inkjet printer are disclosed. The printing liquid provided by the invention can be suitable for the ink-jet printer to print a Bank,the Bank printed by the printing liquid has color or light reflection property, optical crosstalk between sub-pixels can be avoided, the selection of materials can meet the requirement of mu LED display, the preparation method is realized through the ink-jet printer, and the process of one-time printing and one-time heating of the Bank is realized. According to a multi-time laminated printing heating method, large-thickness Bank preparation can be met, the printing area can be selected according to the actual situation, the whole pixel defining layer does not need to be prepared, resources aresaved, and the working procedure is shortened.
Owner:JIHUA LAB
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