4results about How to "Reduce optical crosstalk" patented technology

The application relates to the technical field of image sensors, and provides an image sensor and a manufacturing method.The image sensor comprises a semiconductor substrate, a plurality of pixel regions, a metal interconnection layer and a blocking structure.The blocking structure is composed of an isolation structure arranged in the semiconductor substrate, a crosstalk modulation structure and a first contact hole structure which are sequentially arranged in a dielectric layer and correspond to the isolation structure.The blocking structure can form an effective light blocking wall structure on one hand, preventing light of one pixel region from being reflected by the metal interconnection layer and crosstalking into an adjacent pixel region; and on the other hand, the blocking structure can prevent over-etching of the isolation structure during processing of the first contact hole structure, thereby reducing the enrichment and diffusion of charges in the isolation structure, effectively improving the dark current performance of the device, and simultaneously reducing optical crosstalk and electrical crosstalk of the image sensor, which is conducive to improving the imaging quality of the image sensor.

The invention discloses a miniature light emitting diode chip, a forming method thereof and an automobile lamp, and the miniature light emitting diode chip comprises a first epitaxial layer which is provided with a first side and a second side which are opposite to each other; a plurality of multi-quantum well layers located on the first side, wherein the multi-quantum well layers are in contact with the first epitaxial layer; a plurality of second epitaxial layers located on the first side, wherein each multi-quantum well layer is located between the first epitaxial layer and the corresponding second epitaxial layer; and the plurality of conductive reflector layers are located on the first side, each conductive reflector layer is electrically connected with the corresponding second epitaxial layer, and each conductive reflector layer surrounds the non-light-emitting side of the corresponding multi-quantum well layer. According to the micro light-emitting diode chip, the plurality of conductive reflector layers are additionally arranged, the conductive reflector layers not only can meet the requirement for electrical connection of the micro light-emitting diode chip, but also can block and reflect light rays emitted by the multi-quantum well layer towards the non-light-emitting side, so that the photoelectric conversion efficiency of the micro light-emitting diode chip is improved, and light crosstalk is reduced.

The application provides an electro-optical modulator and an optical quantum computer, and relates to the technical field of electro-optical modulation.The electro-optical modulator comprises a waveguide optical path structure, a direct current bias structure and a radio frequency modulation structure.The waveguide optical path structure comprises an input end optical waveguide, a light splitting waveguide, a first modulation arm, a second modulation arm, a beam combining waveguide, a curved waveguide and an output end optical waveguide connected in sequence.The output end optical waveguide is arranged side by side with the input end optical waveguide and is connected with the curved waveguide.The direct current bias structure is arranged on the two sides of the first modulation arm.The radio frequency modulation structure is arranged on the two sides of the first modulation arm and the two sides of the plurality of second modulation arms.The light signal directions of the input end optical waveguide and the output end optical waveguide are opposite.Compared with the prior art, the application can realize the same side coupling of the input and output optical ports, the overall size is smaller, the degree of integration is higher, the light directly entering the light outlet port is avoided, the optical crosstalk is reduced, the extinction ratio is improved, and the optical signal transmission effect is improved.

The invention provides an image sensor and a manufacturing method thereof. The image sensor comprises a substrate; a photodiode and a deep trench isolation structure which are arranged at intervals are arranged in the substrate; the composite dielectric stack layer is arranged on the substrate, and the composite dielectric stack layer comprises a first oxide layer, a high dielectric constant layer and a second oxide layer which are stacked; the optical gaps are arranged in the second oxide layers on the photodiodes, the optical gaps scatter incident light, and the propagation optical path of the incident light in the photodiodes is increased; the grating is arranged on the composite dielectric stack layer at the top of the deep trench isolation structure; and the light filtering structure is arranged on the composite dielectric stack layer at the top of the photodiode. According to the image sensor and the manufacturing method thereof provided by the invention, the response of the image sensor to near-infrared light can be improved, and the photoelectric conversion efficiency of the image sensor is enhanced.