10results about How to "Reduce optical crosstalk" patented technology

The invention relates to a display panel, a preparation method and application thereof and an AR near-to-eye display device. The display panel comprises a substrate, a light-emitting pixel and a metasurface structure layer which are sequentially stacked, the metasurface structure layer is arranged on the light-emitting side of the light-emitting pixel, and the metasurface structure layer is configured to perform phase modulation on a first light beam emitted from the light-emitting pixel to the metasurface structure layer. Therefore, the second light beam emitted from the metasurface structure layer has collimation and directionality. Wherein the light-emitting pixel comprises sub-pixels of three colors to emit RGB three-color light, the metasurface structure layer comprises three metasurface units, the sub-pixels and the metasurface units are attached in a one-to-one alignment mode, and each metasurface unit conducts phase modulation on light of one color. The display panel can be applied to naked eye 3D light field display, the super-surface structure layer not only realizes collimation and directionality of emergent light of the display panel and improves light efficiency and brightness, but also is favorable for realizing light and thin display panel.

The application relates to the technical field of image sensors, and provides an image sensor and a manufacturing method.The image sensor comprises a semiconductor substrate, a plurality of pixel regions, a metal interconnection layer and a blocking structure.The blocking structure is composed of an isolation structure arranged in the semiconductor substrate, a crosstalk modulation structure and a first contact hole structure which are sequentially arranged in a dielectric layer and correspond to the isolation structure.The blocking structure can form an effective light blocking wall structure on one hand, preventing light of one pixel region from being reflected by the metal interconnection layer and crosstalking into an adjacent pixel region; and on the other hand, the blocking structure can prevent over-etching of the isolation structure during processing of the first contact hole structure, thereby reducing the enrichment and diffusion of charges in the isolation structure, effectively improving the dark current performance of the device, and simultaneously reducing optical crosstalk and electrical crosstalk of the image sensor, which is conducive to improving the imaging quality of the image sensor.

The invention discloses a miniature light emitting diode chip, a forming method thereof and an automobile lamp, and the miniature light emitting diode chip comprises a first epitaxial layer which is provided with a first side and a second side which are opposite to each other; a plurality of multi-quantum well layers located on the first side, wherein the multi-quantum well layers are in contact with the first epitaxial layer; a plurality of second epitaxial layers located on the first side, wherein each multi-quantum well layer is located between the first epitaxial layer and the corresponding second epitaxial layer; and the plurality of conductive reflector layers are located on the first side, each conductive reflector layer is electrically connected with the corresponding second epitaxial layer, and each conductive reflector layer surrounds the non-light-emitting side of the corresponding multi-quantum well layer. According to the micro light-emitting diode chip, the plurality of conductive reflector layers are additionally arranged, the conductive reflector layers not only can meet the requirement for electrical connection of the micro light-emitting diode chip, but also can block and reflect light rays emitted by the multi-quantum well layer towards the non-light-emitting side, so that the photoelectric conversion efficiency of the micro light-emitting diode chip is improved, and light crosstalk is reduced.

Embodiments of the present application relate to a display device, comprising: a growth substrate comprising a first surface and a second surface opposite to each other, a material of the growth substrate being silicon; a chip layer formed by epitaxial growth on the first surface of the growth substrate, comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence in a direction away from the growth substrate, the chip layer comprising a plurality of light emitting units; a driving layer located on a side of the chip layer away from the growth substrate, comprising a plurality of driving units, the driving units being in conductive connection with the light emitting units; and a pixel groove located in the growth substrate, extending in a direction from the second surface to the chip layer, and corresponding to positions of the light emitting units. Thus, active driving of the light emitting units is better achieved.

The application discloses a light-emitting module, comprising a stacked light-emitting chip and an optical functional layer: the light-emitting chip comprises a light-emitting functional layer, and a plurality of light-emitting units are arranged in the light-emitting functional layer; the optical functional layer is arranged on the light-emitting side of the light-emitting functional layer, and comprises a grid structure with a plurality of grid holes and wavelength conversion materials filled in the grid holes, wherein the size of the grid hole is smaller than the size of the light-emitting unit. The light-emitting module provided by the application separates the wavelength conversion materials physically by arranging the grid structure with the grid hole size smaller than the light-emitting unit, so that a large amount of light propagating in the transverse direction in the light excited in the range of a single light-emitting unit is blocked by the grid structure before reaching the edge of the light-emitting unit and is reflected back to the light-emitting direction or absorbed, that is, the number of photons escaping to the adjacent light-emitting unit can be greatly reduced, and the optical crosstalk phenomenon is significantly reduced, and even the optical crosstalk phenomenon is invisible.

The application provides an electro-optical modulator and an optical quantum computer, and relates to the technical field of electro-optical modulation.The electro-optical modulator comprises a waveguide optical path structure, a direct current bias structure and a radio frequency modulation structure.The waveguide optical path structure comprises an input end optical waveguide, a light splitting waveguide, a first modulation arm, a second modulation arm, a beam combining waveguide, a curved waveguide and an output end optical waveguide connected in sequence.The output end optical waveguide is arranged side by side with the input end optical waveguide and is connected with the curved waveguide.The direct current bias structure is arranged on the two sides of the first modulation arm.The radio frequency modulation structure is arranged on the two sides of the first modulation arm and the two sides of the plurality of second modulation arms.The light signal directions of the input end optical waveguide and the output end optical waveguide are opposite.Compared with the prior art, the application can realize the same side coupling of the input and output optical ports, the overall size is smaller, the degree of integration is higher, the light directly entering the light outlet port is avoided, the optical crosstalk is reduced, the extinction ratio is improved, and the optical signal transmission effect is improved.

The utility model discloses an imaging optical lens group, which comprises a lens shell, a plane mirror arranged at the top of a first lens, a first shading pad arranged outside the inner sides of the first lens and a second lens, a backing ring arranged at the rear side of a sixth lens, and a light absorption layer arranged at the top of the plane mirror. Nested parts are arranged on the left side and the right side of the plane mirror, the plane mirror is connected with the lens shell in a nested mode, second shading pads are arranged on the outer portions of the inner sides of the second lens and the third lens, third shading pads are arranged on the outer portions of the inner sides of the fourth lens and the fifth lens, and a first shading ring is arranged on the rear side of the third lens. A second shading ring is arranged on the rear side of the fifth lens, a shading pad can help an optical system to better adapt to different environmental conditions, the stability and reliability of the system are improved, meanwhile, the shading ring supports the lenses while reducing optical crosstalk, and the shading ring is also a common arrangement and is used for protecting the lenses and reducing interference of light rays among the lenses.

The invention discloses a stacked structure Micro-LED display module capable of preventing optical crosstalk and a preparation method of the stacked structure Micro-LED display module. Relates to the field of optical semiconductors, the display module comprises a plurality of pixel units arranged in an array mode, each pixel unit comprises a substrate layer and a passivation layer which are arranged in a stacked mode, a plurality of light-emitting blocks are arranged between the substrate layer and the passivation layer, and the light-emitting blocks are arranged in a stacked mode; an N electrode is arranged on each light-emitting block, the N electrodes are not communicated with one another, and the light-emitting blocks are jointly connected with a P electrode; the N electrode and the P electrode are isolated through a passivation layer; according to the method, the display module is prepared through layer-by-layer stacking and patterning; the electrodes of the multiple light-emitting blocks are arranged at intervals, under the control of forward and reverse voltages or currents, photon-generated carriers generated by the short-wavelength LED on the photoluminescence effect of the long-wavelength LED are made to reversely migrate, composite light emitting is not conducted on the light-emitting layer, light emitting of different wavelengths completely depends on electric control is achieved, and under the condition that bias voltage is applied for regulation and control, the light emitting efficiency is improved. The phenomenon of light crosstalk in the multi-color stacked Micro-LED chips is reduced, and the saturation degree of Micro-LED display is improved.

The invention discloses a double-color LED and a preparation method thereof. The method comprises the steps that an N-type layer and a mask layer are sequentially formed on the surface of a substrate in a stacked mode; removing a part of the mask layer to enable the mask layer to form a plurality of spaced first blank areas exposing the N-type layer, and forming a nano column in each first blank area; forming a first light-emitting structure on the top surface of each nano-column, and forming a protective layer covering the side surface of the first light-emitting structure; forming a second light-emitting structure on at least part of the side surface of each nanorod; forming a conductive layer covering the surface of the second light-emitting structure on the surface of the mask layer; forming an N electrode, a first P electrode corresponding to each first light-emitting structure and a second P electrode corresponding to each second light-emitting structure; wherein the first P electrode is arranged on each first light-emitting structure, the second P electrode is arranged on the conductive layer, and the N electrode is arranged on the N-type layer. According to the invention, integration of the nano-column double-color LED is realized; the optical crosstalk between the light-emitting structures is reduced; and the interconnection electrode control nano-column is realized.

The invention provides an image sensor and a manufacturing method thereof. The image sensor comprises a substrate; a photodiode and a deep trench isolation structure which are arranged at intervals are arranged in the substrate; the composite dielectric stack layer is arranged on the substrate, and the composite dielectric stack layer comprises a first oxide layer, a high dielectric constant layer and a second oxide layer which are stacked; the optical gaps are arranged in the second oxide layers on the photodiodes, the optical gaps scatter incident light, and the propagation optical path of the incident light in the photodiodes is increased; the grating is arranged on the composite dielectric stack layer at the top of the deep trench isolation structure; and the light filtering structure is arranged on the composite dielectric stack layer at the top of the photodiode. According to the image sensor and the manufacturing method thereof provided by the invention, the response of the image sensor to near-infrared light can be improved, and the photoelectric conversion efficiency of the image sensor is enhanced.