Double-color infrared detector and manufacturing method thereof

Abstract

The invention discloses a double-color infrared detector. The double-color infrared detector comprises an n-type substrate, and a first n-type contact layer, an n-type blue channel layer, a p-type connecting layer, an n-type red channel layer and a second n-type contact layer which are sequentially stacked on the n-type substrate. The first n-type contact layer is further provided with a first electrode, and the second n-type contact layer is provided with a second electrode corresponding to the first electrode. The invention further discloses a manufacturing method of the double-color infrared detector. According to the double-color infrared detector, the problem that in the double-color infrared detector, when one channel works, minority carriers generated by the other channel are easilydiffused to the working channel, and therefore large crosstalk is generated is solved.

Description

technical field

[0001] The invention relates to the field of semiconductors, in particular to a two-color infrared detector and a manufacturing method thereof. Background technique

[0002] Infrared radiation detection is an important part of infrared technology, widely used in thermal imaging, satellite remote sensing, gas monitoring, optical communication, spectral analysis and other fields. Antimonide II superlattice (InAs / GaSb or InAs / InAsSb) infrared detectors are considered to be the most ideal for the preparation of third-generation infrared detectors due to their good uniformity, low Auger recombination rate, and large wavelength adjustment range. Choose one. Compared with mercury cadmium telluride infrared detectors (HgCdTe), it has better uniformity, repeatability, lower cost, and better performance in long-wave and very long-wave bands; compared with quantum well infrared detectors (QWIP), its quantum efficiency is higher High, smaller dark current, simpler proc...

Examples

Embodiment 1

[0032] Such as figure 2 As shown, the n-type blue channel layer 3 in this embodiment includes an n-type blue channel absorbing layer 31 and an n-type blue channel barrier layer sequentially stacked on the first n-type contact layer 2 32. The n-type red channel layer 5 includes an n-type red channel barrier layer 51 and an n-type red channel absorbing layer 52 stacked on the p-type connection layer 4 in sequence. In this embodiment, the n-type blue channel absorbing layer 31 and the n-type red channel absorbing layer 52 are placed on both sides of the overall detector;

[0033] and if figure 2As shown, between the n-type blue channel absorbing layer 31 and the p-type connecting layer 4, and between the n-type red channel absorbing layer 52 and the p-type connecting layer 4, an n-type blue channel is respectively arranged. The color channel barrier layer 32 and the n-type red channel barrier layer 51, so that the n-type absorption layer, the n-type barrier layer and the p-t...

Embodiment 2

[0050] This embodiment specifically illustrates the manufacturing method of the two-color infrared detector of Embodiment 1.

[0051] Such as Figure 3 to Figure 6 As shown, the production method includes:

[0052] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type InAs, the thickness is 500 μm, and the doping concentration is 5×10 16 cm -3 .

[0053] Step S2, using a metal-organic chemical vapor deposition (MOCVD) process as a growth process, and the growth sources are TMGa, TMIn, TMSb and AsH 3 , the n-type dopant source is SiH 4 , the p-type dopant source is DEZn, the growth temperature is about 600°C, and the reaction chamber pressure is 200Torr. After the impurities on the surface of the n-type substrate 1 are removed by high-temperature treatment, the first n-type contact layer 2, the n-type blue channel absorption layer 31, and the n-type blue channel absorption layer 31 are sequentially formed on the n-type substrate 1. Cha...

Embodiment 3

[0066] This embodiment specifically illustrates another manufacturing method of the two-color infrared detector of Embodiment 1.

[0067] Such as Figure 3 to Figure 6 As shown, the production method includes:

[0068] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type GaSb, the thickness is 500 μm, and the doping concentration is 2×10 18 cm -3 .

[0069]Step S2, using molecular beam epitaxy (MBE) as the growth process, the growth source is solid elemental source In, As and Sb, the n-type dopant source is Si, the p-type dopant source is Be, and the growth temperature is about 400°C. After the impurities on the surface of the n-type substrate 1 are removed by high-temperature treatment, the first n-type contact layer 2, the n-type blue channel absorption layer 31, and the n-type blue channel absorption layer 31 are sequentially formed on the n-type substrate 1. Channel barrier layer 32, p-type connection layer 4, n-type red channel ba...

technical field

[0001] The invention relates to the field of semiconductors, in particular to a two-color infrared detector and a manufacturing method thereof. Background technique

[0002] Infrared radiation detection is an important part of infrared technology, widely used in thermal imaging, satellite remote sensing, gas monitoring, optical communication, spectral analysis and other fields. Antimonide II superlattice (InAs / GaSb or InAs / InAsSb) infrared detectors are considered to be the most ideal for the preparation of third-generation infrared detectors due to their good uniformity, low Auger recombination rate, and large wavelength adjustment range. Choose one. Compared with mercury cadmium telluride infrared detectors (HgCdTe), it has better uniformity, repeatability, lower cost, and better performance in long-wave and very long-wave bands; compared with quantum well infrared detectors (QWIP), its quantum efficiency is higher High, smaller dark current, simpler proc...

Examples

Embodiment 1

[0032] Such as figure 2 As shown, the n-type blue channel layer 3 in this embodiment includes an n-type blue channel absorbing layer 31 and an n-type blue channel barrier layer sequentially stacked on the first n-type contact layer 2 32. The n-type red channel layer 5 includes an n-type red channel barrier layer 51 and an n-type red channel absorbing layer 52 stacked on the p-type connection layer 4 in sequence. In this embodiment, the n-type blue channel absorbing layer 31 and the n-type red channel absorbing layer 52 are placed on both sides of the overall detector;

[0033] and if figure 2As shown, between the n-type blue channel absorbing layer 31 and the p-type connecting layer 4, and between the n-type red channel absorbing layer 52 and the p-type connecting layer 4, an n-type blue channel is respectively arranged. The color channel barrier layer 32 and the n-type red channel barrier layer 51, so that the n-type absorption layer, the n-type barrier layer and the p-t...

Embodiment 2

[0050] This embodiment specifically illustrates the manufacturing method of the two-color infrared detector of Embodiment 1.

[0051] Such as Figure 3 to Figure 6 As shown, the production method includes:

[0052] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type InAs, the thickness is 500 μm, and the doping concentration is 5×10 16 cm -3 .

[0053] Step S2, using a metal-organic chemical vapor deposition (MOCVD) process as a growth process, and the growth sources are TMGa, TMIn, TMSb and AsH 3 , the n-type dopant source is SiH 4 , the p-type dopant source is DEZn, the growth temperature is about 600°C, and the reaction chamber pressure is 200Torr. After the impurities on the surface of the n-type substrate 1 are removed by high-temperature treatment, the first n-type contact layer 2, the n-type blue channel absorption layer 31, and the n-type blue channel absorption layer 31 are sequentially formed on the n-type substrate 1. Cha...

Embodiment 3

[0066] This embodiment specifically illustrates another manufacturing method of the two-color infrared detector of Embodiment 1.

[0067] Such as Figure 3 to Figure 6 As shown, the production method includes:

[0068] Step S1, providing an n-type substrate 1, the material of the n-type substrate 1 is n-type GaSb, the thickness is 500 μm, and the doping concentration is 2×10 18 cm -3 .

[0069]Step S2, using molecular beam epitaxy (MBE) as the growth process, the growth source is solid elemental source In, As and Sb, the n-type dopant source is Si, the p-type dopant source is Be, and the growth temperature is about 400°C. After the impurities on the surface of the n-type substrate 1 are removed by high-temperature treatment, the first n-type contact layer 2, the n-type blue channel absorption layer 31, and the n-type blue channel absorption layer 31 are sequentially formed on the n-type substrate 1. Channel barrier layer 32, p-type connection layer 4, n-type red channel ba...

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