Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Image sensor and formation method thereof

A technology of image sensor and photosensitive area, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the serious problems of CMOS image sensor process difficulty, optical crosstalk, etc., and achieve the effect of improving sensitivity and reducing influence

Inactive Publication Date: 2018-08-03
HUAIAN IMAGING DEVICE MFGR CORP
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, existing CMOS image sensors have serious optical crosstalk and the process of forming CMOS image sensors is relatively difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor and formation method thereof
  • Image sensor and formation method thereof
  • Image sensor and formation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] There are many problems in the image sensor, for example, the dark current of the image sensor is relatively large.

[0027] Now in conjunction with a CMOS image sensor, analyze the reason why the dark current of the CMOS image sensor is relatively large:

[0028] figure 1 It is a schematic diagram of the structure of a CMOS image sensor.

[0029] Please refer to figure 1 , the CMOS image sensor includes: a substrate 100, the substrate 100 includes an opposite first surface and a second surface, the substrate includes a plurality of discrete photosensitive regions A and adjacent photosensitive regions A Isolation region B; the second surface of the substrate 100 has a dielectric layer 110 .

[0030] Continuing with reference to 1, a metal layer 120 is formed on the first surface of the substrate 100 .

[0031] Please refer to figure 2 , the metal layer 120 is etched to remove the metal layer 120 in the isolation region B to form a metal grid 121; a filter 131 is f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an image sensor and a formation method thereof. The formation method of the image sensor comprises the steps of providing a substrate, wherein the substrate comprises a first surface; the substrate comprises multiple separated light sensitive regions and isolation regions positioned between the adjacent light sensitive regions; forming a supporting layer on the surface of the first surface of the substrate in the isolation regions; and forming an anti-crosstalk layer on the surface of the side wall of the supporting layer. By virtue of the method, the technological difficulty is relatively low, and the formed image sensor is relatively low in optical crosstalk.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] With the continuous improvement of semiconductor technology, the image sensor (Image Sensor), as a basic device for information acquisition, has been more and more widely used in modern society. [0003] According to different components, the image sensor can be divided into two categories: CCD (Charge Coupled Device, Charge Coupled Device) image sensor and CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor element) image sensor. With the development of semiconductor technology, the performance of CMOS transistors has gradually improved, and the resolution has gradually surpassed that of CCD image sensors. The CMOS image sensor has the characteristics of high integration, low power consumption, high speed, and low cost. [0004] CMOS image sensor is a typical so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14621H01L27/14623H01L27/14685
Inventor 龙海凤李天慧黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com