Image sensor and formation method thereof

An image sensor and substrate technology, applied in radiation control devices and other directions, can solve the problems affecting the imaging quality of the image sensor and the reduction of quantum efficiency, and achieve the effects of reducing longitudinal leakage current, improving light absorption rate, and improving consistency

Inactive Publication Date: 2019-05-21
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

[0004] However, in existing image sensors, due to the different absorption depths of light in the silicon substrate, part of the light will pass through the photodiode without being absorbed, resulting in a decrease in quantum efficiency and affecting the imaging quality of the image sensor.

Method used

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  • Image sensor and formation method thereof
  • Image sensor and formation method thereof
  • Image sensor and formation method thereof

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Embodiment Construction

[0027] In existing image sensors, part of the light will pass through the photodiode without being absorbed, resulting in a decrease in quantum efficiency and affecting the imaging quality of the image sensor.

[0028] refer to figure 1 , figure 1 It is a schematic cross-sectional structure diagram of an image sensor in the prior art.

[0029] In an existing image sensor, a semiconductor substrate 100 can be provided, metal grids 104 are formed on the surface of the semiconductor substrate 100, and filter structures 106 are formed in the openings between the metal grids 104, and then filter structures 106 are formed in the openings between the metal grids 104. The surface of the mirror structure 106 forms a lens structure 108 .

[0030] Wherein, a logic device, a pixel device and a metal interconnection layer are formed in the semiconductor substrate 100, the pixel device may include a photodiode 102, and the metal interconnection layer may include a metal interconnection st...

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Abstract

The invention discloses an image sensor and a formation method thereof. The image sensor can comprise a semiconductor substrate, a plurality of reflection blocks and a metal interlayer medium layer, wherein a plurality of photodiodes are arranged in the semiconductor substrate; the plurality of reflection blocks are positioned on the front side of the semiconductor substrate, and a gap is formed between adjacent reflection blocks; the metal interlayer medium layer covers the reflection blocks, and a metal interconnection structure is formed in the metal interlayer medium layer; and the reflection surface of each reflection block faces at least one photodiode for reflecting rays which enter the reflection surface back to the photodiode. By use of the scheme, a ray adsorption amount can be improved, optical crosstalk is reduced, and the sensitivity of the image sensor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] The image sensor is the core component of the camera equipment, which realizes the image capture function by converting the optical signal into an electrical signal. Taking Complementary Metal Oxide Semiconductor Image Sensors (CMOS Image Sensors, CIS) devices as an example, due to their advantages of low power consumption and high signal-to-noise ratio, they have been widely used in various fields. [0003] Taking Back-side Illumination (BSI) CIS as an example, in the existing manufacturing process, logic devices, pixel devices and metal interconnection structures are first formed inside and on the surface of the semiconductor substrate, and then the carrier wafer and The front side of the semiconductor substrate is bonded, and then the back of the semiconductor substrate is thinned,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 王亮李志伟冉春明黄仁德
Owner HUAIAN IMAGING DEVICE MFGR CORP
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