Pixel isolation structure and manufacturing method of pixel isolation structure

A pixel isolation and isolation structure technology, applied in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve problems such as optical crosstalk that cannot be solved

Inactive Publication Date: 2011-12-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this technical means cannot solve t

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  • Pixel isolation structure and manufacturing method of pixel isolation structure
  • Pixel isolation structure and manufacturing method of pixel isolation structure
  • Pixel isolation structure and manufacturing method of pixel isolation structure

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Example

[0023]

[0024] figure 2 The pixel isolation structure according to an embodiment of the present invention is schematically shown.

[0025] Such as figure 2 As shown, the pixel structure P according to the embodiment of the present invention is arranged on a substrate Sub, and an isolation structure ISO is arranged around the pixel structure P. In addition, an oxide layer S is arranged in the isolation structure ISO.

[0026] Preferably, the oxide layer S is a silicon dioxide layer. In addition, the refractive index of the silica layer was 1.4.

[0027] Further, as figure 2 As shown, the incident light IR that enters the pixel structure P at an incident angle θ through various optical elements, and reaches the isolation structure ISO after a certain distance in the pixel structure P, the incident light IR will enter the isolation structure ISO and reach the isolation The interface between the structure ISO and the oxide layer S.

[0028] At this time, due to the refractive ind...

Example

[0030]

[0031] Next, the manufacturing method of the pixel isolation structure according to the embodiment of the present invention will be described.

[0032] First, the pixel structure and the isolation structure may be arranged on the substrate so that the isolation structure is arranged around the pixel structure.

[0033] Subsequently, the isolation structure is doped with boron.

[0034] Finally, an oxide layer is formed in the isolation structure by oxygen injection, for example, the oxide layer is a silicon dioxide layer with a refractive index of 1.4.

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Abstract

The invention provides a pixel isolation structure and a manufacturing method of the pixel isolation structure. The pixel isolation structure according to the present invention includes: a substrate, a pixel structure, and an isolation structure, wherein the pixel structure is arranged on the substrate, and the isolation structure is arranged around the pixel structure; and, the isolation structure An oxide layer is arranged in it. Using the pixel isolation structure, when the incident light reaches the isolation structure after a certain distance in the pixel structure, the incident light will enter the isolation structure and reach the interface between the isolation structure and the oxide layer; at this time, as an optically dense medium The refractive index of the isolation structure is different from that of the oxide layer as the optical thinning medium, so that the light reaching the boundary between the isolation structure and the oxide layer is partially reflected back into the pixel structure. If the incident angle θ satisfies certain conditions, the light that reaches the boundary between the isolation structure and the oxide layer is completely reflected back into the pixel structure. Thus, the occurrence of optical crosstalk is reduced, thereby reducing the optical crosstalk from affecting the normal function of the pixel structure.

Description

technical field [0001] The present invention relates to the field of semiconductor device design and manufacture, and more specifically, the present invention relates to a pixel isolation structure and a method for manufacturing the pixel isolation structure. Background technique [0002] In the design and manufacture of semiconductor devices, it is often necessary to manufacture pixel units on silicon wafers. These pixel structures must be effectively isolated from their surrounding devices or regions. [0003] figure 1 A pixel isolation structure according to the prior art is schematically shown. Such as figure 1 As shown, the pixel structure P is arranged on the substrate Sub, and the isolation structure ISO is arranged around the pixel structure P. [0004] However, there is a problem in the above-mentioned pixel isolation structure, that is, if figure 1 As shown, when the incident light IR that enters the pixel structure P through various optical elements reaches t...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/762
Inventor 饶金华巨晓华张克云
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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