46results about How to "Improve quantum conversion efficiency" patented technology

The invention relates to the production of light-amplifying optical material. Liquid reactant (10) is atomized into droplets (15) using a high velocity gas (20) . The droplets (15) are subsequently introduced into a flame (100) . Reactants (10, 30) are oxidized in the flame (100) and condensed by forming small particles (50) . At least a fraction of said particles (50) is collected and fused to form optical waveguide material, which is subsequently drawn to form an optical waveguide (750) . According to the invention, the velocity of the atomizing gas (20) stream is in the range of 0.3 to 1.5 times the velocity of sound. The high velocity enhances atomization and increases reaction rates in the flame (100) . The residence times are reduced to such a degree that unwanted phase transformations in the produced particles (50) are substantially minimized. Consequently, very homogeneous material is produced. Especially, in the production of erbium-doped silica, low percentage of clustered erbium ions is achieved.

The invention provides a BSI image sensor including a photoreceptor portion and a circuit portion. The photoreceptor portion includes a micro-lens and a filter, wherein incident photons reach the BSIimage sensor by successively passing through the micro-lens and an optical filter; a transparent conductive film under the micro-lens and the optical filter, wherein the incident photons continue to pass through the transparent conductive film; and a first substrate disposed under the transparent conductive film, and used for capturing and detecting the received photons. The BSI image sensor is characterized in that a heterojunction is formed between the transparent conductive film and the first substrate. Additionally, the invention relates to a method for manufacturing a BSI image sensor ofthis type.

The invention discloses a preparation method for an anatase titanium dioxide nanocrystalline mesoporous microsphere. A butyl titanate alcoholic solution is prepared from butyl titanate and alcohol; a gelatin solution is prepared by gelatin and acetic acid; the gelatin solution is slowly dropped into the butyl titanate alcoholic solution to obtain a sol solution; then the sol solution is aged and dried to obtain dry gel; the dry gel is put into distilled water for boiling; after filtration cleaning is executed, the product is cleaned through the alcohol and then is dried to obtain the anatase TiO2 nanocrystalline mesoporous microsphere. The preparation technology disclosed by the invention is simple and favorable for large-scale popularization and application, and a used solvent is safe and environment-friendly.

The invention provides a back-illuminated CMOS image sensor and a formation method thereof. The back-illuminated CMOS image sensor includes a front-end structure with a photodiode as well as an auxiliary structure and a dielectric layer which are located at the front surface of the front-end structure, wherein the auxiliary structure is surrounded by the front-end structure and the dielectric layer, and the refraction rate of the auxiliary structure is lower than the refraction rates of the front-end structure and the dielectric layer. With the back-illuminated CMOS image sensor of the invention adopted, after incident light passes through the photodiode, parts of the incident light, which are subjected to total reflection, are increased, and can enter the photodiode again, and therefore, photons absorbed by the photodiode can be effectively increased, and quantum conversion efficiency can be improved.

Disclosed is a solar battery which: is made from a silicon semiconductor; has a high quantum-conversion efficiency; requires a small number of production steps during manufacturing; and is capable of being recycled in view of environmental load and material recycling. Specifically, a solar battery according to an embodiment of the present invention has a basic structure of a P—SiN—N junction in which minute silicon clusters are inserted in a P—N junction, and includes a quantum dot layer having a multiple energy level structure consisting of an energy level of a valence band and an energy level of a conduction band, and intermediate energy levels located between both the bands. The quantum dot layer is composed by periodically arranging silicon quantum dots consisting of silicon clusters with an average particle diameter of 2.5 nm or less and an inter-quantum-dot distance of 1 nm or less.

The invention provides a backside illuminated CMOS image sensor and a method for manufacturing the backside illuminated CMOS image sensor. The method comprises the steps that a wafer is provided, and a plurality of photodiodes are formed in the wafer; a touch etching stop layer is formed in the front of the wafer; the materials of the touch etching stop layer is SiN, and technological conditions for forming of the touch etching stop layer comprise 2000W-3000W radio-frequency power, a 1000mil-2500mil gap, 4.1Torr-4.3Torr pressure and a 300 DEG C-380 DEG C temperature. Due to the mode, the touch etching stop layer in the backside illuminated CMOS image sensor has high reflectivity, light irradiating on the backside illuminated CMOS image sensor can be well reflected in the photodiodes, and quantum converting efficiency is improved.

The invention discloses a nickel-doped zinc oxide hierarchical structure photocatalytic nano-material having a visible-light photocatalytic activity and a preparation method thereof. The component of the material is Zn1-xNixO, wherein x=0.5-10 mol%. The method comprises the steps: dissolving a zinc salt, a nickel salt and an alkali in an alcohol solvent or an alcohol / water mixed solvent to obtain a precursor solution with the total concentration of the metal ions of 0.0625-0.25 mol / L and the molar concentration of the alkali of 0.0625-2.5 mol / L; placing the precursor solution in a high-pressure reaction kettle for sealing reaction; after cooling, washing with ethanol, drying in air, and thus obtaining the photocatalytic nano-material having a nano-granular structure, a hollow sphere structure, an icosahedron structure, a hexagonal prism structure or a ball-like structure and other hierarchical structures. The material both has relatively strong photoabsorption and photoresponse in the visible light range of 400-700 nm, significantly improves the activity of visible-light photocatalytic degradation of organic dyes, and can be widely used for photocatalytic degradation treatment of dye industry wastewater.

The invention discloses an image sensor and a preparation method thereof. The preparation method comprises the following steps: providing a first wafer which includes a first silicon substrate, a first silicon epitaxial layer and an interconnection layer which are successively laminated; thinning the first wafer from one side of the silicon substrate till the first silicon epitaxial layer; providing a second wafer which includes a second wafer substrate and a semiconductor layer which is arranged on one side of the second wafer substrate; bonding the second wafer and the thinned first wafer, the semiconductor layer facing towards the first silicon epitaxial layer; peeling the second wafer substrate from the second wafer; preparing a second isolation structure in the exposed semiconductor layer, and forming a second photoelectric diode region in the semiconductor layer. The semiconductor layer has a forbidden band with a width smaller than that of silicon. The image sensor can better absorb infrared lights, and effectively increase quantum conversion efficiency of a CMOS image sensor.

The invention discloses a mono-crystalline silicon double-sided solar cell. A front texturing morphology structure (1), a front PN emitter junction (2), a front passivated anti-reflection medium layer (3) and a front electrode (4) are sequentially formed on the front of a mono-crystalline silicon substrate (100). A back texturing morphology structure (5), a back surface field (6), a back passivated anti-reflection medium layer (7) and a back electrode (8) are sequentially formed on the back of the mono-crystalline silicon substrate. The solar cell is characterized in that the back texturing morphology structure (5) is a platform type texture surface, and platform structures (5a) are distributed on the mono-crystalline silicon substrate in a scattered, or tiled, or partially scattered, partially tiled, partially connected and partially overlapped way. The invention further discloses a preparation method of the mono-crystalline silicon double-sided solar cell. The minority carrier surface recombination and optical absorption characteristics of the double-sided solar cell are optimized, and the efficiency of quantum conversion is improved.

The invention discloses a laminated spectrum spectroscopic solar photocatalytic reaction system, which belongs to the technical field of solar energy utilization. The system is obtained by depositing N layers of photocatalytic thin film materials with gradually decreasing optical bandgap values ​​and continuously changing band edge positions layer by layer on the substrate material, where N≥3; between two adjacent photocatalytic thin film materials There is a transition layer connection between them, and a co-catalyst with surface plasmon resonance effect is deposited on the Nth layer. The end face near the light-receiving surface is an anti-reflection and anti-reflection film with a porous-pyramid composite structure with a suede light-trapping effect. Its material composition The same material as the first layer of photocatalytic film. The significant advantages of the photocatalytic reaction system of the present invention are wide spectral response and high quantum conversion efficiency, which can greatly improve the utilization rate of solar energy.