Backside illuminated CMOS image sensor and method for manufacturing same
A technology of image sensor and manufacturing method, which is applied in the direction of radiation control devices, etc., can solve problems such as low quantum conversion efficiency and cross-pixel interference, and achieve the effect of improving quantum conversion efficiency
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[0032] The back-illuminated CMOS image sensor proposed by the present invention and its manufacturing method will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0033] Please refer to figure 1 , which is a schematic flowchart of a manufacturing method of a back-illuminated CMOS image sensor according to an embodiment of the present invention. Such as figure 1 As shown, the manufacturing method of the back-illuminated CMOS image sensor comprises:
[0034] S10: providing a wafer in which a plurality of photodiodes are formed;
[0035] S11: forming a contact etch stop layer (contact etch stop l...
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