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Back-illuminated CMOS image sensor and formation method thereof

An image sensor, back-illuminated technology, applied in the field of imaging, can solve the problems such as the decrease in the proportion of the absorbable light area and the influence, and achieve the effect of improving the quantum conversion efficiency

Active Publication Date: 2015-12-30
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] However, as the demand for miniaturization becomes stronger, the proportion of the area that can absorb light decreases, which affects the quantum conversion efficiency (QuantumEfficiency, QE)

Method used

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Embodiment Construction

[0034] The back-illuminated CMOS image sensor of the present invention and its forming method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, and it should be understood that those skilled in the art can modify the present invention described herein while still The advantageous effects of the present invention are realized. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0035] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist...

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Abstract

The invention provides a back-illuminated CMOS image sensor and a formation method thereof. The back-illuminated CMOS image sensor includes a front-end structure with a photodiode as well as an auxiliary structure and a dielectric layer which are located at the front surface of the front-end structure, wherein the auxiliary structure is surrounded by the front-end structure and the dielectric layer, and the refraction rate of the auxiliary structure is lower than the refraction rates of the front-end structure and the dielectric layer. With the back-illuminated CMOS image sensor of the invention adopted, after incident light passes through the photodiode, parts of the incident light, which are subjected to total reflection, are increased, and can enter the photodiode again, and therefore, photons absorbed by the photodiode can be effectively increased, and quantum conversion efficiency can be improved.

Description

technical field [0001] The invention relates to the field of imaging, in particular to a back-illuminated CMOS image sensor and a forming method thereof. Background technique [0002] The image sensor is developed on the basis of photoelectric technology. The so-called image sensor is a sensor that can sense optical image information and convert it into a usable output signal. Image sensors can improve the visual range of the human eye, enabling people to see the microcosm and macrocosm that cannot be seen by the naked eye, see what happens in places that people cannot reach temporarily, and see various physical and chemical changes beyond the visual range of the naked eye. Life, physiology, the occurrence and development of disease, and so on. It can be seen that image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities can no longer be separated from image sensors. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 高喜峰李全宝
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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