Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Image sensor and formation method of the same

An image sensor, dielectric layer technology, applied in the direction of electric solid device, semiconductor device, electrical components, etc., can solve the problems of high production cost, incident light loss, complex process, etc., to reduce process complexity, improve protection, reduce The effect of production costs

Inactive Publication Date: 2018-08-17
HUAIAN IMAGING DEVICE MFGR CORP
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, the process of forming the metal grid is relatively complicated, which leads to high production cost and is easy to form metal pollution. The metal grid also causes the loss of incident light and reduces the photosensitivity of the image sensor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor and formation method of the same
  • Image sensor and formation method of the same
  • Image sensor and formation method of the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In the image sensor, after the lens structure captures the incident light, it is filtered by a filter matrix to remove irrelevant light and form monochromatic light. The incident photons reach the semiconductor substrate and are absorbed by the pixel device to generate photogenerated carriers. Since optical crosstalk easily occurs before the light reaches the silicon substrate and affects the imaging effect, it is necessary to form a metal grid on the surface of the semiconductor substrate to isolate the incident light. However, in the prior art, the process of forming the metal grid is relatively complicated, resulting in high production cost and easy formation of metal pollution. The metal grid also causes loss of incident light and reduces the photosensitivity of the image sensor.

[0028] The inventors of the present invention have found through research that when light is injected into the gas from a dielectric material (such as silicon oxide) and the incident angle...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an image sensor and formation method of the same. The formation method of the image sensor includes the steps: providing a semiconductor substrate, wherein a dielectric layeris formed on the surface of the semiconductor substrate; forming a trench in the dielectric layer, wherein the opening of the trench is located at the surface of the dielectric layer; forming a dielectric film which covers the dielectric layer and seals the opening of the trench so as to form air gaps; removing the dielectric film among the adjacent air gaps and at least one part of the dielectriclayer among the adjacent air gaps so as to form a filter groove; and forming a filter in the filter groove. The scheme of the formation method of the image sensor has the advantages of preventing optical crosstalk, reducing the production cost, avoiding formation of metal pollution, reducing loss of incident light, improving photosensitivity of the image sensor at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] The image sensor is the core component of the camera equipment, which realizes the image capture function by converting the optical signal into an electrical signal. Taking a CMOS image sensor (CMOS Image Sensors, CIS) device as an example, due to its advantages of low power consumption and high signal-to-noise ratio, it has been widely used in various fields. [0003] Taking Back-side Illumination (BSI) CIS as an example, in the existing manufacturing process, logic devices, pixel devices and metal interconnection structures are first formed in the semiconductor substrate, and the pixel devices include photodiodes. Then use the carrier wafer to bond the front side of the semiconductor substrate, and then thin the back of the semiconductor substrate, and then form the subsequent proce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14621H01L27/14623H01L27/14685
Inventor 孟俊生李志伟黄仁德王欢
Owner HUAIAN IMAGING DEVICE MFGR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com