Structure-optimized silver-doped Cu-Zn-Sn sulfur thin film solar cell and preparation method thereof

A thin-film solar cell, copper-zinc-tin-sulfur technology, applied in the field of solar cells, can solve the problems of poor compactness and poor adhesion of Ag-doped CZTS, and achieve the effects of reducing interface recombination, reducing pores, and improving crystallinity and compactness.

Active Publication Date: 2019-08-27
YUNNAN NORMAL UNIV
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  • Description
  • Claims
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Problems solved by technology

[0005] In view of the above-mentioned defects existing in the prior art, the object of the present invention is to provide a relatively optimized silver-doped copper-zinc-tin-sulfur thin-film solar cell, which solves the problems of poor compactness and poor adhesion of Ag-doped CZTS

Method used

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  • Structure-optimized silver-doped Cu-Zn-Sn sulfur thin film solar cell and preparation method thereof
  • Structure-optimized silver-doped Cu-Zn-Sn sulfur thin film solar cell and preparation method thereof
  • Structure-optimized silver-doped Cu-Zn-Sn sulfur thin film solar cell and preparation method thereof

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preparation example Construction

[0034] The preparation process of the silver-doped copper-zinc-tin-sulfur absorption layer includes two steps: the first step is to sputter various metal elements by magnetron sputtering to form a stack, commonly known as: prefabricated layer. In the second step, the prefabricated layer is placed in sulfur vapor at high temperature to undergo a chemical reaction to form a new substance, silver-doped copper-zinc-tin-sulfur. The gist of this paper is to adopt an optimized metal stack structure to facilitate the uniform fusion of various elements, thereby forming high-quality silver-doped copper-zinc-tin-sulfur.

[0035] to combine figure 1 , figure 2 The silver-doped zinc-tin-sulfur thin film solar cell of the present invention comprises a glass substrate 1, a back electrode 2, an absorption layer 3, a buffer layer 4, a transparent conductive window layer 5 and an upper electrode 6 connected in sequence from bottom to top. The back electrode is a Mo film with a thickness of 1...

Embodiment 1

[0040] (1) Substrate cleaning: Clean the soda-lime glass with decontamination powder and washing powder in turn, and then put it into alcohol and acetone and ultrasonically for 30 minutes each. Afterwards, rinse with deionized water for 3~4 times, and use No. 1 solution (ammonia: hydrogen peroxide: water = 1:2:5) and No. 2 solution (hydrochloric acid: hydrogen peroxide: water = 1:2:8) to heat Boil for 10 minutes. Finally, after the sample was cooled, it was rinsed with deionized water and dried with nitrogen;

[0041] (2) Put the cleaned sample into the magnetron sputtering chamber and evacuate to 5×10 -4 pa. Then pass high-purity argon gas with a gas flow rate of 5.5 sccm as the working gas. Adjust the rotation speed of the substrate table to 8.0rpm. The double-layer Mo film with high and low resistance layers was sputtered by DC method as the back electrode. Firstly, the Mo film with high resistance layer was sputtered, the sputtering power was 200W, the working pressure...

Embodiment 2

[0049] Observe whether it meets expectations after increasing the vulcanization temperature.

[0050] The difference between Example 2 and Example 1 is that the vulcanization temperature of Example 1 is 560° C., and the vulcanization temperature of Example 2 is 580° C. Excessive temperature will generally accelerate the decomposition of copper, zinc, tin and sulfur and increase the loss of elements, from Figure 9 , Figure 10 A small amount of holes can be seen, indicating that the loss of elements is not obvious. To a certain extent, it shows that the doping of Ag has a significant effect on reducing the loss of Sn elements.

[0051] In summary, image 3 and Figure 7 The X-ray diffraction spectra of the silver-doped copper-zinc-tin-sulfur prepared in Example 1 and Example 2 respectively. Both figures are consistent with the standard diffraction peaks of copper, zinc, tin and sulfur, and the intensity of the diffraction peaks is higher, indicating that the sample has bet...

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Abstract

The invention discloses a structure-optimized silver-doped Cu-Zn-Sn sulfur thin film solar cell and a preparation method thereof, and belongs to the field of solar cells. The solar cell comprises a glass substrate, an absorption layer, a buffer layer, a transparent conductive window layer and an upper electrode which are sequentially connected, wherein a pre-fabrication layer structure of the absorption layer is Cu/Sn/Ag/ZnS. The pre-fabrication layer structure of the absorption layer employs a Cu/Sn/Ag/ZnS structure, the loss of a Sn element is prevented by depositing Ag on a Sn layer, and holes among boundaries are reduced; meanwhile, the defect of a CuZn reverse structure is effectively reduced by employing Ag to Cu, and the collection efficiency of photoproduction carrier is improved;and moreover, silver doping has benefits to expansion of the grain size of the Cu-Zn-Sn sulfur thin film and improvement of attachment of a Mo back electrode.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a structurally optimized silver-doped copper-zinc-tin-sulfur thin film solar cell and a preparation method thereof. Background technique [0002] Quaternary semiconductor compound CuZnSnS (Cu 2 ZnSnS 4 , referred to as CZTS) film because of its high absorption coefficient (greater than 10 4 cm -1 ), the constituent elements are abundant in the earth’s crust, and are close to the optimal absorption band gap (1.5eV) of solar cells, which has become a research hotspot in recent years. [0003] At present, there are many methods for preparing CZTS thin films, such as sol-gel method, spin coating method, atomic layer deposition method, magnetron sputtering method, electrochemical method, etc. Among them, magnetron sputtering method can achieve large-area and uniform deposition And is widely used. The magnetron sputtering method is generally divided into two deposition methods: co-spu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/072H01L31/18H01L31/0392H01L31/032C23C14/02C23C14/34C23C14/18C23C14/16C23C14/06C23C14/08C23C14/14C23C14/30C23C14/58
CPCC23C14/021C23C14/0629C23C14/086C23C14/14C23C14/165C23C14/185C23C14/30C23C14/34C23C14/5866H01L31/0327H01L31/0392H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 郝瑞亭顾康郭杰刘欣星孙帅辉魏国帅刘斌王璐马晓乐
Owner YUNNAN NORMAL UNIV
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