6results about How to "Reduce interfacial recombination" patented technology

The invention discloses a method for improving the efficiency of a perovskite solar cell, and belongs to the technical field of solar cells. The insulating spacer film prepared between the electron transport layer and the perovskite layer of the perovskite solar cell by adopting the electron beam evaporation method has high uniformity, the cell interface structure can be optimized, defects are reduced, charge recombination loss is reduced, and the photoelectric conversion efficiency and stability are effectively improved. The insulating spacer layer not only can block external moisture and pollutants, reduce direct contact between the perovskite layer and the electron transport layer and prolong the service life of the cell, but also can inhibit internal ion migration and slow down performance degradation. By accurately regulating and controlling the thickness of the insulating spacer layer, charge transmission optimization and compound loss minimization are realized. An innovative technical path is provided for research and development of efficient and stable perovskite solar cells, and further development of the solar cell technology is expected to be promoted.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.

The present disclosure provides a back contact solar cell and a preparation method thereof. The back contact solar cell comprises an N-type crystalline silicon substrate, a P-type doped region and an N-type doped region on the back of the crystalline silicon substrate. The N-type doped region comprises a first tunneling oxide layer and a carbon-doped N-type polysilicon layer arranged outwardly from the back of the crystalline silicon substrate. The P-type doped region comprises an intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer and a laser-induced nanocrystalline silicon transition layer arranged outwardly from the back of the crystalline silicon substrate. According to the back contact solar cell of the present disclosure, the carbon doping in the N-type polysilicon layer can significantly reduce the interface recombination of the N-type contact; and the nanocrystallization structure of the P-type doped region takes into account the passivation quality and conductivity.

The application discloses a preparation method of a vanadium-doped carbon composite back contact layer and application of the vanadium-doped carbon composite back contact layer in preparation of a cadmium telluride solar cell. The method comprises the following steps: firstly, performing a coordination reaction on a vanadium source compound and a carbazole monomer to obtain a vanadium-doped carbazole polymer; secondly, dissolving and coating the polymer on a surface of a cadmium telluride light absorption layer; and thirdly, performing gradient annealing treatment on the polymer to convert the polymer into the vanadium-doped carbon composite back contact layer in situ. During the gradient annealing process, selective rupture of coordination bonds of the polymer is caused, and vanadium ions released from the polymer preferentially diffuse along cadmium telluride grain boundaries to form a local P + Doped region; At the same time, the polymer main chain is carbonized to form a dense conductive network similar to graphene. The prepared back contact layer has high conductivity and high efficient hole transport function, can effectively control the contact potential barrier between the cadmium telluride light absorption layer and the back electrode, and improves the injection and collection efficiency of holes.

The invention belongs to the photovoltaic field, and particularly relates to a passivation layer, an inverted assembly, a perovskite solar cell, a preparation method and application. The passivation layer according to the present invention comprises 5-bromo-2-(methylthio) pyrimidine-4, 6-diamine. The passivation layer provided by the invention can passivate surface defects of the perovskite light absorption layer and the electron transport layer, and inhibit interface recombination and defect recombination of the perovskite light absorption layer and the electron transport layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module. The preparation method comprises the following steps that a tunneling oxide layer, a p + doped amorphous silicon carbide layer and a p + doped amorphous silicon layer are sequentially arranged on the back face of a silicon substrate in the direction away from the silicon substrate; grooves which are distributed at intervals and penetrate through the p + doped amorphous silicon layer are formed in the p + doped amorphous silicon layer, then channels are formed in the junctions of the grooves and the p + doped amorphous silicon layer, the tunneling oxide layer is divided into a P region and an N region, the p + doped amorphous silicon carbide layer and the p + doped amorphous silicon layer are arranged on the P region, and the p + doped amorphous silicon carbide layer is arranged on the N region; performing crystallization treatment, so that the p + doped amorphous silicon carbide layer and the p + doped amorphous silicon layer on the P region are respectively converted into a p + doped polycrystalline silicon carbide layer and a p + doped polycrystalline silicon layer, and the p + doped amorphous silicon carbide layer on the N region is converted into an n + doped polycrystalline silicon carbide layer; and performing post-treatment to obtain the solar cell.