2results about How to "Reduce interfacial recombination" patented technology

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.

The application discloses a preparation method of a vanadium-doped carbon composite back contact layer and application of the vanadium-doped carbon composite back contact layer in preparation of a cadmium telluride solar cell. The method comprises the following steps: firstly, performing a coordination reaction on a vanadium source compound and a carbazole monomer to obtain a vanadium-doped carbazole polymer; secondly, dissolving and coating the polymer on a surface of a cadmium telluride light absorption layer; and thirdly, performing gradient annealing treatment on the polymer to convert the polymer into the vanadium-doped carbon composite back contact layer in situ. During the gradient annealing process, selective rupture of coordination bonds of the polymer is caused, and vanadium ions released from the polymer preferentially diffuse along cadmium telluride grain boundaries to form a local P + Doped region; At the same time, the polymer main chain is carbonized to form a dense conductive network similar to graphene. The prepared back contact layer has high conductivity and high efficient hole transport function, can effectively control the contact potential barrier between the cadmium telluride light absorption layer and the back electrode, and improves the injection and collection efficiency of holes.