455 results about "Ag element" patented technology

A magnetoresistive element includes a foundation layer, a first magnetic layer on the foundation layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer is made of a ferromagnetic metal containing one or more elements selected from a first group consisting of Co, Fe, and Ni, and one or more elements selected from a second group consisting of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir, and Os. The foundation layer is made of a metal containing one or more elements selected from a third group consisting of Al, Ni, Co, Fe, Mn, Cr, and V.

An optical recording medium includes a substrate and a recording layer in which data can be recorded by projecting a laser beam thereonto, the recording layer including a first recording film containing an element selected from the group consisting of Si, Ge, Sn, Mg, In, Zn, Bi and Al as a primary component and a second recording film containing Cu as a primary component and 10 to 30 atomic % of Al as an additive. The thus constituted optical recording medium has an excellent initial recording characteristic and can store recorded data in a good condition over the long term.

A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.

A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas element to a second heat treatment. That is, the rare gas element is incorporated into the second semiconductor film to generate a strain field as a gettering site.

The invention relates to a method of producing a strip of nanocrystalline material which is obtained from a wound ribbon that is cast in an amorphous state, having atomic composition [Fe1-a-bCoaNib]100-x-y-2-alpha-beta-gamma Cu<x>Si<y>BzNbalphaM'betaM''gamma, M' being at least one of elements V, Cr, Al and Zn, and M being at least one of elements C, Ge, P, Ga, Sb, In and Be, with: a <= 0.07 and b = 0.1, 0.5 <= x <=1.5 and 2 <= a <= 5, 10 <= y <= 16.9 and 5 <= z <= 8, beta <= 2 and gamma <= 2. According to the invention, the amorphous ribbon is subjected to crystallisation annealing, in which the ribbon undergoes annealing in the unwound state, passing through at least two S-shaped blocks under voltage along an essentially longitudinal axial direction of the ribbon, such that the ribbon is maintained at an annealing temperature of between 530 DEG C and 700 DEG C for between 5 and 120 seconds and under axial tensile stress of between 2 and 1000 Mpa. The tensile stress applied to the amorphous ribbon, the displacement speed of the ribbon during annealing and the annealing time and temperature are all selected such that the cross-section profile of the strip is not in the form of Omega and the maximum deflection of the cross-section of the strip is less than 3% of the width of the strip and preferably less than 1% of the width. The invention also relates to the strip and the core thus obtained and to the device used to implement the method.

The invention relates to a sintered Nd-Fe-B rear-earth permanent magnet with fine magnetization characteristic, comprising the following components: (R1a, R2b) Fe100-a-b-c-d McBd, wherein R1 is Nd, or comprising Nd and at least one element of rear-earth elements selected from Sc, Y, La, Ce, Pr, Pm, Sm and Eu; R2 comprises Yb and at least one element of rear-earth elements selected from Tb, Dy, Gd, Ho, ErTm and Lu; and M comprises Cr and at least one element of rear-earth elements selected from Co, Cu, Al, Cr, Ga, Nb, Ti, V, Mn, Sn, Ca, Mg, Pb, Sb, Zn, Si, Ni, Mo, W and Ta. In the invention, the sintered Nd-Fe-B easy to charge magnetism to be saturated is manufactured when the magnetic circuit is at open state, and the method is low in cost, simple, and easy to realize large-scale industrial production.

The invention discloses a metal oxide lithium ion battery positive material and a preparation method thereof. The problem to be solved is to improve the electrochemistry property of the positive material. The material formula of the invention is LiNi1-x-y-zMnxCoyMzO2, wherein the x+y+z is less than 1, or a quaternary or a quinary metal oxide material of the LiNi1-x-y-z-rMnxCoyMzNrO2, wherein the x+y+z+r is less than 1, and the M and N are selected from one of the Al, Ti, Cr, Mg, V, Zn and Zr, x is equal to 0.01-0.8, y is equal to 0.01-0.8, z is equal to 0.01-0.8 and r is equal to 0.01-0.8. The preparation method comprises: preparing a precursor mixture, mixing and sintering. Comparing with the prior art, the invention prepares the oxide lithium ion battery material by a liquid phase multi-element mixing reaction, a mixing method and a solid state sintering method, the maximum discharging capacity is larger than 150mAh/g, the primary coulomb efficiency is more than 90, the capacity conservation rate after 300 cycles is more than 95 The metal oxide lithium ion battery positive material is suitable for industrial scale production.

The invention discloses a self-cleaning antibacterial ceramic glaze and a preparation method and a ceramic product thereof. The key of the self-cleaning antibacterial ceramic glaze provided by the invention is that the ceramic glaze contains Ti element and Ag element. The ceramic glaze comprises the following components in percentage: 52-72% of SiO2, 5-9% of Al2O3, 6-10% of CaO, 2-6% of K2O, 0.5-1.5% of Na2O, 0.5-3% of ZnO, 1-3% of Li2O, 4-8% of Ti2O, 1-3% of V2O5 and 1-5% of Ag2O3. The ceramic product of the invention comprises a ceramic noumenon, which is characterized by containing a self-cleaning antibacterial ceramic glaze layer on the surface of the ceramic noumenon. The composition of the invention is suitable to be adopted in primary glazing process, and the surface of the ceramic glaze has high flatness, fined and delicate crystalloid, good smooth finish, no needle pole, extremely soft and good glass like and smooth in touch and reaches the self-cleaning antibacterial effect of ultra smooth glaze layer enamel.

A ferroelectric capacitor includes: a ferroelectric film, and a lower electrode and an upper electrode interposing the ferroelectric film, wherein the ferroelectric film includes a first ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO₃ formed by a metal organic chemical vapor deposition method, a second ferroelectric layer of ferroelectric material in which a part of B site element in ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO₃ is replaced with Nb, and a third ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO₃ formed by a sol-gel method, which are sequentially laminated from the side of the lower electrode.

A transparent protective film for polarizing plate being provided via an adhesive layer on at least one surface of a polarizer, wherein a ratio of constituent elements (oxygen ratio/carbon ratio) on the polarizer-adhering surface of the transparent protective film for polarizing plate, which is determined by X-ray photoelectron spectrometry, is larger than 0.75 has facilitate adhesion surface and no deformation without problems attributable to saponification.

The present invention provides a method for producing a homogeneous complex oxide sol comprising Si and a metal other than Si as metal elements, and a method for producing a Si-containing hologram recording material using a homogeneous complex oxide sol. A method for producing a complex oxide sol comprising Si and a metal other than Si as metal elements, the method comprising: mixing a silanol compound with an alkoxide compound of a metal other than Si so that the silanol compound is reacted with the alkoxide compound, thereby yielding a precursor of a complex oxide, and adding water to the complex oxide precursor so as to hydrolyze an alkoxyl group bonded to the metal other than Si, and then making the resulting hydrolysate undergo a condensation reaction, thereby forming a complex oxide. A hologram recording medium (11) having a hologram recording layer (21) comprising the hologram recording material obtained by the production method.

Changes of the direction of magnetization at the central region of the free magnetic layer is facilitated by using a layer comprising a magnetic material having a small exchange stiffness constant such as the NiFe layer comprising the NiaFeb alloy (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.

A semiconductor memory device comprising; (A) a transistor, (B) a capacitor member formed above said transistor through an insulating interlayer, said capacitor member comprising a lower electrode, a capacitor layer formed of a high-dielectric-constant material or a ferroelectric material and an upper electrode, (C) a contact plug formed in said insulating interlayer, for electrically connecting the lower electrode formed on the insulating interlayer with the transistor, and (D) a diffusion barrier layer formed between the lower electrode and the contact plug, said semiconductor memory device further comprising (E) an adhesion layer formed at least between the lower electrode and the diffusion barrier layer, and said adhesion layer consisting of an alloy that contains a noble metal element as a main component, and contains, as a component, a metal element that differs from any one of the noble metal element, an alkali element and an alkaline earth metal element and that contains no oxygen atom.

The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band. The core-shell magnetic material includes: core-shell magnetic particles including magnetic metal particles and an oxide coating layer, the magnetic metal particle containing magnetic metal selected from the group of Fe, Co, and Ni, nonmagnetic metal selected from the group of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and an element selected from carbon and nitrogen, and the oxide coating layer being made of an oxide containing at least one nonmagnetic metal as one of the components of the magnetic metal particle; and oxide particles existing at least a part between the magnetic metal particles and containing nonmagnetic metal selected from the group of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and in which nonmagnetic metal/magnetic metal (atomic ratio) in the particles is higher than that in the oxide coating layer.

An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.