12 results about "Heterojunction field effect transistor" patented technology

The application belongs to the microelectronic field and particularly relates to a semiconductor heterojunction field effect transistor with a P-type doped structure. A P-type doped layer structure is introduced on a substrate, the material and type of the P-type doped layer structure are set, the electric field peak of a gate edge and a drain edge and the average electric field of a channel are modulated, and the distribution is more uniform; meanwhile, the saturation output current degradation and the on-resistance increase are avoided due to the shielding effect of the thick gallium nitride buffer layer, so that the breakdown voltage and the figure of merit of the device are improved. Finally, the application effectively solves the problem of insufficient voltage resistance of the existing GaN HFET device under the premise of ensuring the performance of the device.

This invention provides a palladium diselenide / tungsten diselenide vertical heterojunction field-effect transistor, its fabrication method, and its application, belonging to the field of semiconductor device technology. The palladium diselenide / tungsten diselenide vertical heterojunction field-effect transistor comprises, from bottom to top, a substrate, a vertical heterojunction, and a metal electrode; the vertical heterojunction includes a tungsten diselenide layer covering the substrate and a palladium diselenide layer covering the tungsten diselenide layer. This invention first constructs a tungsten diselenide layer on the substrate using chemical vapor deposition (CVD), and then directly grows a palladium diselenide layer on the surface of the tungsten diselenide layer using CVD. This vertical heterojunction field-effect transistor exhibits excellent performance with high saturation current density, high carrier mobility, and a high current on / off ratio, solving the technical problem of low performance and incompatibility with two-dimensional n-type semiconductor field-effect transistors in current two-dimensional p-type semiconductor devices.

The invention discloses a heterojunction field-effect tube infrared sensor based on a surface plasmon resonance suspended gate and a preparation method thereof, the heterojunction field-effect tube infrared sensor at least comprises a source electrode, a drain electrode, a suspended gate and at least one heterojunction channel, and the source electrode and the drain electrode are electrically connected through the heterojunction channel. Wherein in the AlGaN / GaN heterostructure, the thickness of the AlGaN grid electrode position is extremely thin, and the AlGaN grid electrode position is of a groove grid structure. The surface plasmon resonance suspended gate structure can be a Pd porous nano film, a Pd nanosphere array or a Pd nanorod array and is located on the AlGaN layer. When infrared light enters, the Pd nanostructure excites the SPR effect, a local enhanced electromagnetic field is generated on a metal / semiconductor interface, and hot electrons are excited. The high-energy electrons can be injected into an under-gate AlGaN barrier layer to regulate and control the 2DEG concentration, so that the channel carrier density and the photoconductive effect are improved. And in combination with the high mobility of 2DEG, the infrared detection performance with high sensitivity and quick response is realized.

This application discloses a hybrid perovskite single crystal material, its preparation method, and its applications, belonging to the field of functional materials. The chemical formula of the hybrid perovskite single crystal material is (C 11 H 18 N)2(C2H8N)2Pb3I 10 Large-size hybrid perovskite single crystals were grown using a cooling method, exhibiting strong photosensitivity and optoelectronic properties. Further, through mechanical exfoliation and dry transfer, these crystals were precisely stacked layer-by-layer with the two-dimensional semiconductor molybdenum sulfide, enabling the construction of a field-effect transistor with a unique heterojunction structure. This heterojunction field-effect transistor demonstrates excellent electrical performance and stability, providing strong technical support for next-generation memory devices, sensors, and logic circuits. It also holds significant application prospects in emerging fields such as flexible electronics, intelligent electronics, and quantum computing.

This invention relates to a method for improving the transconductance and characteristic frequency of AlGaN / GaN heterojunction field-effect transistors based on device structure optimization, belonging to the field of transistor device research technology. Traditional methods for improving transconductance and characteristic frequency are complex in fabrication, require stringent experimental conditions, and have reached the physical limits of GaN materials. This invention, to a certain extent, only requires optimizing the device structure and fabricating the L… GS / L G and L GD / L G AlGaN / GaN HFETs with larger ratios, and the fabrication of L G Smaller AlGaN / GaN HFETs enhance polarized Coulomb field scattering, thereby improving the gate voltage's ability to modulate electron velocity, or fabricate L... GS and L G Smaller AlGaN / GaN HFETs enhance the electron velocity in the channel, thus achieving the same effect of increasing the transconductance and characteristic frequency of AlGaN / GaN HFETs. They are simple, direct, and highly operable.

The application provides an ultra-low on-resistance fin-type heterojunction field effect transistor, comprising: a first conductive type substrate; a drain metal layer; a first conductive type drift layer; a first conductive type first conductive layer; the side of the first conductive type first conductive layer, which is away from the first conductive type drift layer, comprises at least one protrusion; a second conductive type first semiconductor layer; a second conductive type second semiconductor layer; a gate metal layer; a first conductive type second conductive layer; a passivation layer; and a source metal layer. The application utilizes the heterojunction interface electron accumulation effect, and on the basis of the super-junction structure, the on-resistance of the device is further reduced, and the power figure of merit is obviously improved.

The invention discloses a field effect transistor device with a double-plane body heterojunction structure and capable of improving the current switching ratio and a preparation method, and belongs to the field of organic field effect transistors. The field effect transistor device structure sequentially comprises an N-type heavily-doped silicon grid (6), a SiO2 dielectric layer (5), a P-type organic material (4), an N-type organic material and P-type organic material blending layer (3), an N-type organic material (2) and an electrode (1) made of copper. The preparation method comprises the steps of cleaning a silicon wafer, evaporating the pentacene active layer, evaporating the pentacene / hexadecafluorophthalocyanine copper blending layer, evaporating the hexadecafluorophthalocyanine copper active layer, preparing the source / drain electrode and the like. Compared with the conventional heterojunction technology, the field effect transistor with the double-heterojunction structure is formed by adding the blending layer formed by mixing and growing two materials, the performance of the field effect transistor is greatly broken through, the advantage of lower leakage current is shown, the current switching ratio is greatly increased, and meanwhile, the mobility is increased.

This invention relates to a two-dimensional heterojunction field-effect transistor, its fabrication method, and its application, belonging to the field of transistor technology. The transistor includes a conductive substrate, an insulating dielectric layer disposed on the conductive substrate, a gate electrode disposed on the insulating dielectric layer, a first two-dimensional material layer disposed on the gate electrode, a second two-dimensional material layer disposed on the first two-dimensional material layer, and source and drain electrodes respectively disposed at both ends of the second two-dimensional material layer, with a channel region between the source and drain electrodes. The first and second two-dimensional material layers are made of different materials; the first two-dimensional material layer is a ferroelectric material. The second two-dimensional material layer can form ohmic contacts with the source and drain electrodes. The two-dimensional heterojunction field-effect transistor provided by this invention has a high strength of up to 10. 6 The on / off ratio is close to the theoretical limit of the subthreshold swing.

A switching circuit forming a bidirectional switch between a first node and a second node and resting on a substrate includes a first branch with a first diode in series with a first heterojunction field-effect transistor, and a second branch with a second heterojunction field-effect transistor in series with a second diode, the first branch and the second branch being mounted in parallel to one another and so that the first diode and the second diode are arranged in antiparallel or in anti-series with respect to one another. The first transistor and the second transistor are each provided with a control gate facing a heterojunction band forming an active zone in which an electron gas is capable of being formed. The first diode is a Schottky diode with a metal electrode in contact with the heterojunction band, and the second diode is a Schottky diode with a metal electrode in contact with the heterojunction band. The first diode, the first transistor, the second diode, and the second transistor share the same active zone.

The invention relates to the technical field of semiconductors, in particular to a heterojunction field effect transistor-based biosensor and a preparation method thereof, the biosensor comprises a substrate, a graphene / molybdenum disulfide heterojunction, a liquid metal electrode and a microfluidic module; a central liquid flow channel, a grid electrode pore channel and two groups of electrode channels are formed in the micro-fluidic module; each group of electrode channels comprises two electrode hole channels of which the bottoms are communicated, and the inlet end of one electrode hole channel is used for inserting a wire of external connecting equipment; and the inlet end of the other electrode hole channel is used for infusing liquid gallium-indium alloy to form a liquid metal electrode so as to connect the heterojunction with a wire. According to the invention, by introducing a modular heterojunction film construction method, the assembled preparation of each functional component of the biosensor is realized, the overall manufacturing complexity and time cost are remarkably reduced, the experimental repeatability and the feasibility of large-scale preparation are improved, and the high sensitivity and high specificity of extremely low concentration biomolecule detection are realized.

The invention discloses an organic-inorganic Van der Waals heterojunction field effect transistor and a preparation method thereof.The organic-inorganic Van der Waals heterojunction field effect transistor comprises a substrate, a dielectric layer, an active layer, a source electrode and a drain electrode, and the substrate, the dielectric layer and the active layer are arranged in parallel and connected in the vertical direction from bottom to top; the source electrode and the drain electrode are arranged in parallel and are connected to the upper surface of the active layer, the active layer is a two-dimensional ultrathin Van der Waals heterojunction, and the two-dimensional ultrathin Van der Waals heterojunction comprises an n-type semiconductor two-dimensional single crystal layer and a p-type semiconductor two-dimensional single crystal layer placed on the n-type semiconductor two-dimensional single crystal layer. According to the organic-inorganic Van der Waals heterojunction field effect transistor, the electron mobility is up to 118.42 cm < 2 > V <-1 > s <-1 >, the hole mobility is 2.3 cm < 2 > V <-1 > s <-1 >, and the switch ratio is up to 107. In the aspect of photoelectric detection performance, the responsivity reaches 68312.78 A / W, the response speed is 33 / 27ms, and the specific detection rate reaches 1.05 * 10 < 14 > Jones.

The present application relates to a kind of with auxiliary gate structure's side gate AlGaN / GaN heterojunction field effect transistor and working method and application, belong to microelectronic research technical field, relative to with auxiliary gate structure's open gate AlGaN / GaN heterojunction field effect transistor, the present application introduces by a pair of not with channel contact, symmetrically distributed in the two sides of channel and the shape same metal electrode composition side gate, the two-dimensional electron gas under side gate does not participate in conduction, only drain-source channel conduction, so that the present application is used as low-power class A voltage amplifier, input voltage signal can be from 0V start to negative bias variation. By applying different bias to side gate and auxiliary gate, different device operating modes can be obtained, making the application of the present application in the circuit more flexible and more suitable for the increasingly complex integrated circuit field.