The invention discloses a source-field-plate heterojunction field-effect transistor and a manufacturing method, and mainly solves the problems of low breakdown voltage and low power gain in the conventional field-plate technology. The source-field-plate heterojunction field-effect transistor comprises a substrate (1), a transition layer (2), a potential barrier layer (3), a source electrode (4), a drain electrode (5), a passivating layer (6), a Gamma-shaped grid (8) and a protective layer (11), wherein the passivating layer (6) is provided with a groove (7); a part of the Gamma-shaped grid (8) is positioned in the groove (7), and the other part of the Gamma-shaped grid (8) is positioned at the upper part of the passivating layer (6); the passivating layer (6) between the Gamma-shaped grid (8) and the drain electrode (5) is provided with a source field plate (9) and n floating metal field plates (10); the source field plate (9) is connected with the source electrode (4); the floating metal field plates are same in length, and the distances among the field plates are same; and the Gamma-shaped grid (8), the source field plate (9) and the n floating metal field plates (10) are manufactured by using a same metal deposition process so as to form the source-field-plate heterojunction field-effect transistor. The source-field-plate heterojunction field-effect transistor and the method have the advantages of high breakdown voltage, little grid-drain feedback capacitance, high power grain and simpleness for process, and is applicable to high-frequency and large-power III-V compound microwave power devices.