Two-dimensional material heterojunction field effect transistor, preparation method thereof and transistor array device

Abstract

The invention provides a two-dimensional material heterojunction field effect transistor, a preparation method thereof and a transistor array device. The transistor comprises a conductive substrate, an insulating dielectric layer, a source electrode, a drain electrode, a first two-dimensional material layer and a second two-dimensional material layer, wherein the insulating dielectric layer is arranged on the conductive substrate; the source electrode and the drain electrode are arranged at two ends of the insulating dielectric layer respectively and a channel region is arranged between the source electrode and the drain electrode; the first two-dimensional material layer is arranged on the source electrode and the channel region connected with the source electrode; the second two-dimensional material layer is arranged on the drain electrode and one part of first two-dimensional material layer on the channel region; the first two-dimensional material layer is different from the second two-dimensional material layer in material; the first two-dimensional material layer, the second two-dimensional material layer, the source electrode and the drain electrode can form ohmic contact. The transistor provided by the invention has good properties of output characteristics and the like and is low in cost. The preparation method of the transistor provided by the invention is high in substrate utilization rate and high in preparation efficiency; the damage of metal evaporation to a two-dimensional material can be avoided; and the array device can also be prepared.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a two-dimensional material heterojunction field effect transistor, a preparation method thereof and a transistor array device. Background technique [0002] As the earliest discovered two-dimensional nanomaterial, graphene has great application potential in the field of nano-optoelectronics due to its unique physical and chemical properties, and has attracted a lot of attention and research in recent years. However, the zero-bandgap property of graphene limits its wide practical application in the field of nanoelectronics. Although people use various methods to open its band gap, the opened band gap is still very small and has little effect. In recent years, as an alternative to graphene, two-dimensional transition metal chalcogenides (TMDs) are gradually emerging. They have a certain size band gap (1-3eV) and exhibit excellent optoelectronic properties. For example, b...

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Problems solved by technology

[0004] However, the main problem brought by the above two technologies is that only one device can be prepared on one substrate, and the utilization rate of the substrate is low.

More importantly, although photolithography can produce electrodes with regular patterns, it is easy to cause damage to the two-dimensional material during the process of evaporating metal electrodes, which will affect the performance of the transistor, and the cost is high, which is not conducive to application.

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