Enhanced GaN heterojunction field effect transistor based on metal oxide semiconductor (MOS) control

Abstract

The invention provides an enhanced GaN heterojunction field effect transistor based on metal oxide semiconductor (MOS) control and belongs to the technical field of power semiconductor devices. The enhanced GaN heterojunction field effect transistor comprises a monolithic integrated low-voltage MOS tube and a depletion mode GaN heterojunction field effect transistor, wherein the drain of the MOS tube is connected with the source of the depletion mode GaN heterojunction field effect transistor; the grid of the MOS tube and the grid of the depletion mode GaN heterojunction field effect transistor are connected with each other or the grid of the GaN heterojunction field effect transistor is connected with the source of the MOS tube; and the MOS tube and the depletion mode GaN heterojunction field effect transistor are isolated from each other by using a medium isolation slot. In the enhanced GaN heterojunction field effect transistor based on MOS control, transformation from the depletion mode GaN heterojunction field effect transistor to the enhanced GaN heterojunction field effect transistor is realized by controlling an on / off state of the low-voltage MOS tube connected in series with the depletion mode GaN heterojunction field effect transistor; the enhanced GaN heterojunction field effect transistor has the normally off characteristic of the low-voltage MOS tube and the advantages of high-voltage resistance, low-conductivity resistance and the like of the depletion mode GaN heterojunction field effect transistor, has good frequency characteristic and high output power and density, and is applicable to the high-frequency and high-power fields.

Description

Technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a GaN heterojunction field effect transistor (AlGaN / GaN HFET), in particular to an enhancement mode GaN heterojunction field effect transistor. Background technique [0002] After years of development, silicon (Si)-based power devices have now entered a period of stable performance, and further improvements in their performance are often accompanied by a significant increase in cost. At the same time, many new applications place higher requirements on the size, efficiency, and stability of the power management unit. However, the performance of traditional Si-based power devices has approached its theoretical limit, making wide-bandgap semiconductors an ideal alternative material for power management. As a typical representative of the third generation of semiconductor materials, the wide bandgap semiconductor gallium nitride (GaN) has excellent properties that many ...

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Literature Y.Ohmaki, et.al., "Enhancement-mode AlGaN / AlN / GaN high electron mobility transistor with low on-state resistance and high breakdown voltage," Jpn.J.Appl.Phys., vol.45, no. 44, pp.L1168-L1170, Nov.2006 proposed a method of thinning the AlGaN barrier layer to realize a normally-off AlGaN / GaN HFET, and through SiO 2 Passivation to reduce the turn-on resistance, however, the source-drain current obtained by this method is relatively small, and the thickness of the AlGaN barrier layer is difficult to control accurately; the literature W.Saito, et.al., "Recessed-gate structure approach toward normally off high- voltage AlGaN / GaN HEMT for power electronics applications," IEEE Trans.Electron Devices, vol.53, no.2, pp.356-362, Feb.2006 proposed the concave gate method, but this method also has a source-drain current comparison Small, the problem that the thickness of the AlGaN barrier layer is difficult to control precisely, and the integrity of the AlGaN lattice may be destroyed,; literature Yong Cai, et.al., "Control of Threshold Voltage of AlGaN / GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode "IEEE Trans.Electron Devices, vol.53, no.9, pp.2207-2215, CF proposed by Sep.2006 4 Plasma implantation, through the depletion of channel charges by F ions to achieve normally-off devices, but the integrity of the AlGaN lattice may be destroyed, and the stability of the device remains to be studied

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