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30results about How to "Free diffusion" patented technology

Method for improving gallium nitride based transistor material and device performance using indium doping

The invention discloses a method of increasing the properties of the gallium nitride-based transistor material and device with indium doping and applies in the field of making gallium nitride-based HEMT or HFET materials and devices. The method and process is to form the gallium nitride-based high electron mobility transistor or heterostructure field effect transistor materials on SiC or Si single crystal substrate grown by metal-organic chemical vapor deposition epitaxial growth system. After the AlN or AlGaN nucleating layer and the GaN buffer layer are grown on the SiC or Si single crystal substrate, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN capped layer are grown, and trimethyl indium is added in the growth atmosphere to do epitaxial growth with indium doping. The dislocation of the material or device made by the method of the invention is reduced greatly. The invention improves the interfacial smoothness, increases the electron mobility of the material, increases the growth window, ensures the material grow easier, improves the current collapse of the device, reduces the leakage current and increases transconductance and gain and increases the output power of microwave power devices.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

Graded porous nano alumina/gold composite film electrode and preparation method thereof

The invention relates to a composite film electrode and a preparation method thereof. The electrode is a graded porous nano composite film which is composed of an insulating substrate, a first binding layer, a conductive gold layer, a second binding layer and a modified aluminum layer, wherein small holes with a hole diameter of 2-20 nm are uniformly distributed on the conductive gold layer according to a distribution density of 1010/cm2-1012/cm2, and the small holes with the hole diameter of 20-400 nm are uniformly distributed on the second binding layer and the modified material layer according to the distribution density of 109/cm2-1012/cm2; and the preparation method of the electrode comprises the following steps of: firstly, preparing a multi-layer composite film on the insulating substrate, then, performing anodizing and hole enlargement on the multi-layer composite film to implement that an aluminum layer becomes a porous alumina layer, a gold layer becomes a nano porous structure, the second binding layer becomes a porous oxide of tantalum, niobium or titanium, and cleaning and drying the multi-layer composite film to get a finished product of the graded porous nano alumina/gold composite film electrode. The graded porous nano alumina/gold composite film electrode has high in electroanalytical activity and the dual advantages of a nano porous gold and a porous anodizedaluminum; and the preparation method is simple and reliable, solves the defect of inconvenience in operation caused by high brittleness of an AAO, and fits for mass production.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

Method for growing upright three-dimensional netlike noble metal nano-plate on boron-doped diamond substrate

InactiveCN101570872AGood reproducibilityOvercome the disadvantage of low catalytic activityAnodisationMaterial typeNanostructure
The invention relates to a method for growing an upright three-dimensional netlike noble metal nano-plate on a boron-doped diamond substrate, which comprises the following steps: firstly, when electro-deposition is used in an electrochemical technique, using hydrogen bubbles generated on the surface of a boron-doped diamond film substrate material as a dynamic template so as to obtain an upright three-dimensional netlike nano metal plate; and secondly, in the process of performing a chemical method, using the upright three-dimensional netlike nano metal plate as a template, and through substitution reactions, using high valent noble metal to replace the upright three-dimensional netlike nano metal plate so as to obtain the upright three-dimensional netlike noble metal nano-plate on a boron-doped diamond film. The special structure obtained by the method not only can give full play to the advantages of the boron-doped diamond, but also can greatly improve the specific surface area of the noble metal and effectively promote the diffusion of active reaction molecules in a hole pipeline by a netlike nano structure. Simultaneously, the special combination ensures that a working electrode obtains high electrochemical properties in material types and structural shapes.
Owner:TONGJI UNIV

Preparation method of anti-ultraviolet aging polyphenylene benzodioxazole fiber

The invention relates to a preparation method of an anti-ultraviolet aging polyphenylene benzodioxazole fiber, which comprises the following steps: adding raw materials into a prepolymerizer according to the mixing ratio, removing chlorine hydride gas at certain temperature, gradually increasing the temperature to 160-180 DEG C, carrying out reaction for 12-48h, then transferring into a twin-screw reactor for carrying out postpolymerization, obtaining PBO / PPA spinning solution which is in line with requirements, and quantitatively conveying into a spinning component by a metering pump; and extruding the PBO / PPA spinning solution by a spinneret plate at 150-200 DEG C, passing through an air gap layer of 50-300cm for stretching, then entering into a coagulation bath, passing through a washing process of 50-300m with warm water at about 30-50 DEG C after passing through the coagulation bath, drying at 70-110 DEG C, then winding at the speed of 50-200m, obtaining a PBO protofilament, continuously carrying out heat treatment at 550-650 DEG C and obtaining the high-modulus PBO fiber, wherein an anti-aging agent is added in coagulation bath solution in advance. The anti-ultraviolet aging polyphenylene benzodioxazole fiber has the advantages that the anti-aging agent is closed and retained in the fiber, thereby giving the durable anti-aging property to the fiber; and the process is simple and applicable to the industrial operation.
Owner:EAST CHINA UNIV OF SCI & TECH

Method for extracting and separating polysaccharide from codium fragile

InactiveCN110724207APromote rupturePromotes the release of polysaccharidesAntiviralsChromatographic columnEnvironmental chemistry
The invention relates to the technical field of polysaccharide extraction. Aiming at solving the problems of low polysaccharide extraction rate from codium fragile and difficult separation, the invention provides a method for extracting and separating polysaccharide from codium fragile. The method comprises the following steps: performing pretreatment comprising degreasing on codium fragile; thenperforming extracting on the codium fragile with hot water, performing alcohol precipitation, performing standing overnight, performing suction filtration, adding ethanol for washing, and carrying outdehydrating and drying to obtain a crude polysaccharide which is extracted from the codium fragile with hot water; and finally separating the crude polysaccharide which is extracted from the codium fragile with hot water by using a strong anion exchange chromatographic column: concretely performing gradient elution with an NaCl solution, collecting the polysaccharide by a fraction collector, performing pressure-reduced concentration on the eluent of the components, performing dialysis for desalination, and performing freeze drying to obtain the product polysaccharide. According to the method,cell wall rupture and polysaccharide release are greatly promoted through fatty acid ether sodium sulfate and polysorbate-80 active polypeptide in advance, so that the extraction time is reduced, thepolysaccharide extraction rate is reduced, and the polysaccharide with anti-HPV activity is prepared through proper gradient elution in the strong anion exchange chromatographic column.
Owner:ZHEJIANG OCEAN UNIV

Rotating device of mobile satellite antenna

The invention discloses a rotating device of a mobile satellite antenna. The rotating device comprises an antenna rack, a base, a motor, a driving belt pulley and a driven belt pulley, the base is fixedly connected with a mobile carrier, the antenna rack is rotatably connected with the base, the driving belt pulley is coaxially and fixedly connected with a driving shaft of the motor, the driven belt pulley is coaxially arranged with the central axis of the antenna rack and fixed to the antenna rack, the device is characterized in that a planetary gear train angle limiting mechanism is arrangedon the antenna rack, a winding column is fixedly arranged in the center of the base, a spiral cable sleeves the winding column, a winding fixing seat is fixedly arranged on the antenna rack, one endof the spiral cable is fixed to the winding fixing seat, and the other end of the spiral cable is fixed to the top of the winding column. The rotating device has the advantages that the limiting device is prevented from being triggered possibly when the mobile carrier turns around quickly and reverses by 180 degrees, the phenomenon of satellite loss is avoided, and in addition, a coil of the spiral cable can shrink and diffuse freely in the rotating process of the antenna rack, so that the cable is prevented from being twisted off.
Owner:迪泰(浙江)通信技术有限公司

Glass welding method

ActiveCN113105106AWeld tightlyThe method of welding, including bonding the glass tightlyGlass reforming apparatusGlass productionSiliconHigh heat
The invention relates to a glass welding method. The method comprises the following steps: carrying out laminating treatment on glass; carrying out microwave treatment on the laminated glass; and carrying out welding treatment on the glass subjected to microwave treatment. Firstly, laminating is performed on the glass to enhance the surface interface activity of the glass and promote the combination between glass interfaces; microwave treatment is conducted on the attached glass, microwaves penetrate into the glass, the temperature of the glass is increased through friction generated by the interaction of the microwaves and the glass, the interior and the exterior of the glass are almost heated at the same time, a body heat source state is formed, and the interior and the exterior of the material are heated uniformly and consistently; extra pressurization is not needed, and the glass interface can be freely diffused in the microwave treatment process, so that the effects of tight attachment and no bubble between the glass are realized; and meanwhile, the high temperature generated by the microwaves can enable the interface group of the glass group to have weak connection, and after high-temperature welding, silicon-oxygen bond combination between the glass is promoted, so that the effect of tight connection of the glass plates can be realized.
Owner:WEIDALI IND CHIBI CO LTD

Method for growing upright three-dimensional netlike noble metal nano-plate on boron-doped diamond substrate

The invention relates to a method for growing an upright three-dimensional netlike noble metal nano-plate on a boron-doped diamond substrate, which comprises the following steps: firstly, when electro-deposition is used in an electrochemical technique, using hydrogen bubbles generated on the surface of a boron-doped diamond film substrate material as a dynamic template so as to obtain an upright three-dimensional netlike nano Zn plate; and secondly, in the process of performing a chemical method, using the upright three-dimensional netlike nano Zn plate as a template, and through substitution reactions, using high valent noble metal to replace the upright three-dimensional netlike nano Zn plate so as to obtain the upright three-dimensional netlike noble metal nano-plate on a boron-doped diamond film. The special structure obtained by the method not only can give full play to the advantages of the boron-doped diamond, but also can greatly improve the specific surface area of the noble metal and effectively promote the diffusion of active reaction molecules in a hole pipeline by a netlike nano structure. Simultaneously, the special combination ensures that a working electrode obtains high electrochemical properties in material types and structural shapes.
Owner:TONGJI UNIV

Method for improving gallium nitride based transistor material and device performance using indium doping

The invention discloses a method of increasing the properties of the gallium nitride-based transistor material and device with indium doping and applies in the field of making gallium nitride-based HEMT or HFET materials and devices. The method and process is to form the gallium nitride-based high electron mobility transistor or heterostructure field effect transistor materials on SiC or Si single crystal substrate grown by metal-organic chemical vapor deposition epitaxial growth system. After the AlN or AlGaN nucleating layer and the GaN buffer layer are grown on the SiC or Si single crystal substrate, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN capped layer are grown, and trimethyl indium is added in the growth atmosphere to do epitaxial growth with indium doping. The dislocation of the material or device made by the method of the invention is reduced greatly. The invention improves the interfacial smoothness, increases the electron mobility of the material, increases the growth window, ensures the material grow easier, improves the current collapse of the device, reduces the leakage current and increases transconductance and gain and increases the output power of microwave power devices.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

Preparation method of anti-ultraviolet aging polyphenylene benzodioxazole fiber

The invention relates to a preparation method of an anti-ultraviolet aging polyphenylene benzodioxazole fiber, which comprises the following steps: adding raw materials into a prepolymerizer according to the mixing ratio, removing chlorine hydride gas at certain temperature, gradually increasing the temperature to 160-180 DEG C, carrying out reaction for 12-48h, then transferring into a twin-screw reactor for carrying out postpolymerization, obtaining PBO / PPA spinning solution which is in line with requirements, and quantitatively conveying into a spinning component by a metering pump; and extruding the PBO / PPA spinning solution by a spinneret plate at 150-200 DEG C, passing through an air gap layer of 50-300cm for stretching, then entering into a coagulation bath, passing through a washing process of 50-300m with warm water at about 30-50 DEG C after passing through the coagulation bath, drying at 70-110 DEG C, then winding at the speed of 50-200m, obtaining a PBO protofilament, continuously carrying out heat treatment at 550-650 DEG C and obtaining the high-modulus PBO fiber, wherein an anti-aging agent is added in coagulation bath solution in advance. The anti-ultraviolet agingpolyphenylene benzodioxazole fiber has the advantages that the anti-aging agent is closed and retained in the fiber, thereby giving the durable anti-aging property to the fiber; and the process is simple and applicable to the industrial operation.
Owner:EAST CHINA UNIV OF SCI & TECH

A low-cost method for uniformly preparing graphene films

The invention provides a low-cost method for uniformly preparing a graphene film. The method comprises the following steps: heating inlet air, performing high-temperature annealing on a base, introducing a carbon source, performing graphene film growth, and finally cooling. The method is capable of greatly reducing the dosage of reaction gases, effectively utilizing the reaction gases to prepare graphene and lowering the graphene preparation cost; during a preparation process, a continuous pumping link is omitted, so that the loss and energy consumption of a vacuum pump are greatly reduced; graphene growth is rapid, and the method has the advantage of industrialization; the growth environment stability is high, and the problem that growth environment pressure and gas proportion fluctuate due to instable original continuous inlet gas flow and an instable pumping valve is solved; a method of introducing the gases to achieve reaction pressure and then stopping gas introduction without pumping is adopted to maintain cavity pressure, so that the gases freely diffuse on the surface of a metal catalyst and are uniformly distributed, the sheet resistance uniformity of the graphene film is obviously improved, and thus the graphene quality is improved.
Owner:CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI

Graded porous nano alumina/gold composite film electrode and preparation method thereof

The invention relates to a composite film electrode and a preparation method thereof. The electrode is a graded porous nano composite film which is composed of an insulating substrate, a first binding layer, a conductive gold layer, a second binding layer and a modified aluminum layer, wherein small holes with a hole diameter of 2-20 nm are uniformly distributed on the conductive gold layer according to a distribution density of 1010 / cm2-1012 / cm2, and the small holes with the hole diameter of 20-400 nm are uniformly distributed on the second binding layer and the modified material layer according to the distribution density of 109 / cm2-1012 / cm2; and the preparation method of the electrode comprises the following steps of: firstly, preparing a multi-layer composite film on the insulating substrate, then, performing anodizing and hole enlargement on the multi-layer composite film to implement that an aluminum layer becomes a porous alumina layer, a gold layer becomes a nano porous structure, the second binding layer becomes a porous oxide of tantalum, niobium or titanium, and cleaning and drying the multi-layer composite film to get a finished product of the graded porous nano alumina / gold composite film electrode. The graded porous nano alumina / gold composite film electrode has high in electroanalytical activity and the dual advantages of a nano porous gold and a porous anodizedaluminum; and the preparation method is simple and reliable, solves the defect of inconvenience in operation caused by high brittleness of an AAO, and fits for mass production.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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