A low-cost method for uniformly preparing graphene films

A graphene film, low-cost technology, applied in graphene, gaseous chemical plating, metal material coating process and other directions, can solve the problems of increased cost, low gas utilization rate, fluctuation of growth pressure, etc., to reduce vacuum pump loss and High energy consumption, high growth environment stability, and improved square resistance uniformity

Inactive Publication Date: 2018-03-09
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the growth of graphene only requires a very small amount of carbon source and carrier gas, so the gas utilization rate is extremely low, causing most of the reaction gases to be wasted for no reason, especially the cost of large-scale preparation is greatly increased
High-quality graphene has extremely high requirements on the growth environment. Unstable vacuum pumping will lead to fluctuations in growth pressure, resulting in poor uniformity of the prepared graphene film, resulting in the overall electrical properties of the graphene film being far lower than the theoretical value.

Method used

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  • A low-cost method for uniformly preparing graphene films
  • A low-cost method for uniformly preparing graphene films

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Embodiment 1

[0022] This embodiment provides a method for uniformly preparing a graphene film at low cost, the flow chart of the method is as follows figure 1 As shown, the specific steps are:

[0023] 1. Put a piece of copper foil substrate into the CVD reaction chamber, evacuate the CVD reaction chamber to below 2Pa, stop pumping, and pass in hydrogen gas with a flow rate of 10 sccm. When the chamber pressure is 3000Pa, stop the ventilation.

[0024] 2. Raise the temperature of the reaction chamber to 1050° C., anneal the metal substrate, and keep it for 40 minutes.

[0025] 3. Vacuumize the reaction chamber to below 2Pa and stop pumping. A mixed gas of methane and hydrogen is introduced, and the gas flow rates are 2 sccm and 10 sccm respectively. When the chamber pressure is 200 Pa, the ventilation is stopped, so that the reaction gas is cracked at high temperature and freely diffuses to the metal surface.

[0026] 4. Keep the environment shown in step 3 for 10 minutes to make graphen...

Embodiment 2

[0030] This embodiment provides a method for uniformly preparing a graphene film at low cost, the flow chart of the method is as follows figure 1 As shown, the specific steps are:

[0031] 1. Put 2 pieces of copper foil between 3 pieces of quartz plates, put them into the CVD reaction chamber together, evacuate the CVD reaction chamber to below 2Pa, stop the pumping, and let the hydrogen gas with a flow rate of 10sccm, when the chamber When the body pressure was 3000Pa, the ventilation was stopped.

[0032] 2. Raise the temperature of the reaction chamber to 1050° C., anneal the metal substrate, and keep it for 40 minutes.

[0033] 3. Vacuumize the reaction chamber to below 2Pa and stop pumping. Introduce a mixed gas of methane and hydrogen, the gas flow rate is 2sccm and 100scmm respectively, when the chamber pressure is 100Pa, stop the ventilation, so that the reaction gas is cracked at high temperature, diffuses freely to the metal surface, and keeps for 3 minutes to comp...

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Abstract

The invention provides a low-cost method for uniformly preparing a graphene film. The method comprises the following steps: heating inlet air, performing high-temperature annealing on a base, introducing a carbon source, performing graphene film growth, and finally cooling. The method is capable of greatly reducing the dosage of reaction gases, effectively utilizing the reaction gases to prepare graphene and lowering the graphene preparation cost; during a preparation process, a continuous pumping link is omitted, so that the loss and energy consumption of a vacuum pump are greatly reduced; graphene growth is rapid, and the method has the advantage of industrialization; the growth environment stability is high, and the problem that growth environment pressure and gas proportion fluctuate due to instable original continuous inlet gas flow and an instable pumping valve is solved; a method of introducing the gases to achieve reaction pressure and then stopping gas introduction without pumping is adopted to maintain cavity pressure, so that the gases freely diffuse on the surface of a metal catalyst and are uniformly distributed, the sheet resistance uniformity of the graphene film is obviously improved, and thus the graphene quality is improved.

Description

technical field [0001] The invention relates to the technical field of preparing graphene films, in particular to a method for uniformly preparing graphene films at low cost. Background technique [0002] Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent properties such as force, heat, light, and electricity. The electron mobility of graphene at room temperature exceeds 15,000 cm2 / V s, surpassing carbon nanot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/02C23C16/44C01B32/186
CPCC23C16/0209C23C16/26C23C16/44
Inventor 高翾杨贵奇李占成姜浩史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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