The invention discloses a
light emitting diode epitaxial
wafer and a manufacturing method of the
light emitting diode epitaxial
wafer, and belongs to the technical field of semiconductors. The epitaxial
wafer comprises a substrate, a nucleating layer, a buffer layer, an undoped GaN layer, an n-type layer, a multiple-
quantum-well layer, a first p-type GaN layer, a second p-type GaN layer, an
electron barrier layer and a p-type layer, wherein the nucleating layer, the buffer layer, the undoped GaN layer, the n-type layer, the multiple-
quantum-well layer, the first p-type GaN layer, the second p-type GaN layer, the
electron barrier layer and the p-type layer grow upwards on the substrate. The thickness of the
electron barrier layer ranges from 50 nm to 150 nm, the growth temperature of the first p-type GaN layer ranges from 600 DEG C to 800 DEG C, the
growth pressure of the first p-type GaN layer ranges from 400
Torr to 800
Torr, the growth temperature of the second p-type GaN layer ranges from 800 DEG C to 1000 DEG C, the
growth pressure of the second p-type GaN layer ranges from 50
Torr to 500 Torr. The first p-type GaN layer growing under
high pressure and low temperature is arranged, and a hole injection channel is provided, so that hole injection efficiency is improved; through the second p-type GaN layer growing under low pressure and high temperature, crystalline quality is improved, the thickness of the electron barrier layer is limited, and hole injection efficiency is improved.