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ZnO substrate-based graphene CVD direct epitaxial growth method and manufactured device

A technology of epitaxial growth and graphene, applied in the direction of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as damage, affecting graphene material and device performance, graphene film pollution, etc., and achieve the effect of avoiding damage

Inactive Publication Date: 2013-01-30
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conductivity of the metal substrate under the native graphene prepared by CVD epitaxy makes it impossible to be directly applied, and the substrate transfer technology must be relied on to remove the metal substrate and then transfer it to a suitable substrate, and it is inevitable in the transfer process Earth will pollute and damage graphene films, affecting the performance of graphene materials and devices

Method used

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  • ZnO substrate-based graphene CVD direct epitaxial growth method and manufactured device
  • ZnO substrate-based graphene CVD direct epitaxial growth method and manufactured device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1 A graphene film is prepared on a zinc oxide substrate.

[0021] (1) Put the ZnO substrate into acetone, ethanol and deionized water successively for cleaning, each time for 10 minutes, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0022] (2) Put the ZnO substrate into the chemical vapor deposition CVD reaction chamber, draw a vacuum to 10 -5 Torr, to remove the residual gas in the reaction chamber;

[0023] (3) Pass high-purity Ar into the reaction chamber, keep the temperature at 150°C for 10 minutes, and then evacuate to 10 -5 Torr, discharge the adsorbed gas on the substrate surface.

[0024] (4) Introduce H into the reaction chamber 2 Perform substrate surface pretreatment, gas flow rate 1sccm, reaction chamber vacuum 0.1Torr, substrate temperature 900°C, treatment time 1min;

[0025] (5) Pass H into the reaction chamber 2 and CH 4 , keep H 2 and CH 4 The flow ratio is 10:1, H 2 Flow 20sccm, CH...

Embodiment 2

[0028] Example 2 prepares a graphene film on a zinc oxide substrate.

[0029] (1) Put the ZnO substrate into acetone, ethanol and deionized water successively for cleaning, each time for 8 minutes, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0030] (2) Put the ZnO substrate into the chemical vapor deposition CVD reaction chamber, draw a vacuum to 10 -6 Torr, to remove the residual gas in the reaction chamber;

[0031] (3) Pass high-purity Ar into the reaction chamber, keep the temperature at 250°C for 30 minutes, and then evacuate to 10 -6 Torr, discharge the adsorbed gas on the substrate surface.

[0032] (4) Introduce H into the reaction chamber 2 Perform substrate surface pretreatment, gas flow rate 20sccm, reaction chamber vacuum 1Torr, substrate temperature 1000°C, processing time 10min;

[0033] (5) Pass H into the reaction chamber 2 and CH 4 , keep H 2 and CH 4 The flow ratio is 2:1, H 2 Flow 200sccm, CH ...

Embodiment 3

[0036] Example 3 Prepare a graphene film on a zinc oxide substrate.

[0037] (1) Put the ZnO substrate into acetone, ethanol and deionized water successively for cleaning, each time for 10 minutes, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0038] (2) Put the ZnO substrate into the chemical vapor deposition CVD reaction chamber, draw a vacuum to 10 -6 Torr, to remove the residual gas in the reaction chamber;

[0039] (3) Pass high-purity Ar into the reaction chamber, keep the temperature at 100°C for 20 minutes, and then evacuate to 10 -6 Torr, discharge the adsorbed gas on the substrate surface.

[0040] (4) Introduce H into the reaction chamber 2 Perform substrate surface pretreatment, gas flow rate 10sccm, reaction chamber vacuum 0.5Torr, substrate temperature 950°C, processing time 5min;

[0041] (5) Pass H into the reaction chamber 2 and CH 4 , keep H 2 and CH 4 The flow ratio is 5:1, H 2Flow 100sccm, CH 4...

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Abstract

The invention discloses a ZnO substrate-based graphene CVD direct epitaxial growth method. By adopting an II-VI family compound semiconductor ZnO as a substrate, through reasonably preprocessing the ZnO substrate, regulating the growth pressure, flow and temperature, the optimization of the graphene growth is realized, graphene directly grows on the ZnO without using metal as a catalyst, the growing graphene is not transferred, provides a material for a ZnO-graphene structure device, and can be directly used for manufacturing various devices, thus electrical properties and reliability of the devices are improved, and complexity of device manufacture is lowered. According to the ZnO substrate-based graphene CVD direct epitaxial growth method, a large-area graphene material with semiconductor cleanness can be grown.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and device manufacturing, and relates to a growth method of semiconductor materials, in particular to a graphene CVD epitaxial growth method based on II-VI group semiconductor zinc oxide substrates, which can be used for large-area graphene materials without transfer The growth and preparation of zinc oxide-graphene photoelectric and piezoelectric devices provide materials. Background technique [0002] Graphene is a two-dimensional crystal composed of carbon atoms. It is the lightest and thinnest material known so far. It has very peculiar physical and chemical properties and has outstanding industrial advantages. Material. [0003] Transition metal-catalyzed chemical vapor deposition (CVD) epitaxy is a method widely used in the world to prepare large-area graphene. It is not limited by the size of the substrate, the equipment is simple, and it can be mass-produced. However, the...

Claims

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Application Information

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IPC IPC(8): H01L21/205C30B25/18C23C16/26
Inventor 王东宁静韩砀闫景东柴正张进成郝跃
Owner XIDIAN UNIV
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