17 results about "Oxide substrate" patented technology

A method includes forming a semiconductor region, forming a gate spacer over the semiconductor region, forming a source / drain region aside of the semiconductor region, wherein the source / drain region is of p-type, and forming a gate dielectric over the semiconductor region. The gate dielectric is formed in a space between opposing portions of the gate spacer. A ruthenium oxide layer is formed over the gate dielectric, and acts as a part of a work-function layer of a gate electrode. The method further includes incorporating silicon into the ruthenium oxide layer.

This invention discloses a hole transport material, its preparation method, and its applications, relating to the field of photovoltaic materials technology. The hole transport material provided by this invention has the chemical formula shown in Formula I. The conjugated direction groups used as end groups are selected from carbazole, phenothiazine, phenoxazine, or dibenzocarbazole groups, which possess excellent carrier transport performance. Simultaneously, this invention selects α-hydroxyphosphonic acid groups as unique anchoring groups for self-assembled molecules, enabling the self-assembled molecules to form a stronger anchor with the metal oxide substrate, thereby forming a dense and uniform self-assembled layer, significantly improving the photoelectric conversion efficiency and stability of perovskite solar cells. The α-hydroxyphosphonic acid groups also have an interface passivation effect. This hole transport material, as a perovskite material layer in HTMs (Hyperoxyterephthalic Acid Transformers) cells or modules, helps improve cell efficiency and lifespan, optimize cell structure, reduce costs, and achieve large-area production and industrialization.

The application discloses a kind of composite positive electrode materials, including layered oxide and cladding layer, cladding layer is coated outside layered oxide, layered oxide general formula is NaMeO2, wherein, Me is one or several of Ni, Fe, Mn, Co and the combination of Cu, cladding layer is sulfur-doped carbon-coated Cu-Sn alloy, and S-Sn chemical bond exists in cladding layer.The application also discloses its preparation method, which is to mix and grind layered oxide, Cu powder, Sn powder, organic carbon source solid powder and sulfur source solid powder, and then sinter at 500-600 DEG C for 2-3 hours in a protective atmosphere.The application also discloses a positive plate and a sodium-ion battery with the composite positive electrode material.The application enhances the bonding force between the cladding layer and the layered oxide substrate, and the S-Sn bond effectively inhibits the interlayer peeling of the cladding layer material during the cycle process, thereby improving the battery capacity retention rate.

This invention proposes a boron-phosphorus co-doped multi-element alloy catalyst supported on a metal oxide substrate, its preparation method, and its application. It belongs to the technical field of sodium borohydride hydrolysis hydrogen production materials. The method involves loading cobalt salts (such as cobalt chloride or cobalt nitrate), iron salts (such as ferric chloride or ferric nitrate), and hypophosphite (such as sodium hypophosphite) onto a support (such as γ-alumina or titanium dioxide) using an initial wet impregnation method. Sodium borohydride solution is added for chemical reduction, and boron is added for doping. After washing the reduction product, the catalyst is dried to obtain the supported boron-phosphorus co-doped multi-element alloy catalyst. When used as a sodium borohydride hydrolysis hydrogen production catalyst, it provides a maximum hydrogen production rate of 12729.78 mL·g under optimal conditions. cat ‑1 ·min ‑1 It produces 100% of the theoretical hydrogen yield and features good catalytic performance, simple preparation method, abundant raw materials, and low cost.

The present application provides a kind of high C 2+ The application discloses a preparation method, product and application of a selective carbon dioxide electro-reduction catalyst Ag / AgBr / Cu2O. The preparation method adopts a one-pot solvothermal reduction method, and by controlling the reaction conditions, silver species is synchronously generated in the form of metallic silver and silver bromide and firmly combined with a cuprous oxide substrate. The method route is simple, the reaction conditions are mild, and the product is controllable. When the obtained catalyst is applied to a carbon dioxide electro-reduction reaction, the introduction of Ag and the doping of Br in the catalyst produce a synergistic catalytic effect, effectively promote the C-C coupling path, and significantly improve the C 2+ product selectivity, the C 2+ product faraday efficiency reaches 82.7%, and the local current density reaches 121.7 mA·cm ‑2 -2. At the same time, the hydrogen evolution side reaction is effectively inhibited. The research provides a new idea for designing a high-performance CO2 conversion catalyst, and has important scientific value and industrial application potential.

A semiconductor structure according to the present disclosure includes a semiconductor structure including a backside dielectric layer, a backside etch stop layer (ESL) over the backside dielectric layer, a first source / drain feature and a second source / drain feature over the backside ESL and spaced apart from one another along a first direction, a frontside source / drain contact disposed over the first source / drain feature and the second source / drain feature, a backside contact feature through the backside dielectric layer and the backside ESL to couple to the first source / drain feature, a through via extending through the backside dielectric layer and the backside ESL, a base fin between the backside ESL and the second source / drain feature; and an isolation feature including a portion extending along sidewalls of the base fin. The backside contact feature interfaces the through via in the backside dielectric layer and the isolation feature includes an oxide-based material.

This invention provides a method for preparing infinite-layer nickel-based high-temperature superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based high-temperature superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin film prepared using this method exhibits zero resistance below 40 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.

This invention discloses a composite cathode material comprising a layered oxide and a coating layer. The coating layer covers the layered oxide, which has the general formula NaMeO2, wherein Me is one or more of Ni, Fe, Mn, and Co combined with Cu. The coating layer is a sulfur-doped carbon-coated Cu-Sn alloy, and the coating layer contains S-Sn chemical bonds. This invention also discloses its preparation method, which involves mixing and grinding the layered oxide, Cu powder, Sn powder, organic carbon source solid powder, and sulfur source solid powder, followed by sintering at 500–600°C for 2–3 hours in a protective atmosphere. This invention also discloses a cathode sheet and a sodium-ion battery incorporating this composite cathode material. This invention enhances the adhesion between the coating layer and the layered oxide substrate, while the S-Sn bonds effectively suppress interlayer delamination of the coating layer material during cycling, thereby improving the battery capacity retention rate.

The application discloses an aluminum-based metal organic framework (MOF) in-situ grown on a metal and metal oxide substrate and a preparation method thereof, and the preparation method comprises the following steps: performing surface treatment on an aluminum net to obtain a pretreated aluminum net carrier; putting active alumina balls into deionized water for soaking until the water is clear; drying the soaked active alumina balls to obtain a pretreated active alumina ball carrier; uniformly dispersing organic ligands into a solvent to obtain an organic ligand solution; mixing the pretreated aluminum net carrier or the pretreated active alumina ball carrier with the organic ligand solution and placing them in a reaction kettle to hydrothermally synthesize an aluminum-based MOF material; taking out the aluminum-based MOF material after being cooled to room temperature; and sequentially performing soaking, cleaning and drying on the taken-out aluminum-based MOF material. The aluminum-based MOF material can be quickly and simply synthesized without an additional aluminum source.

The present invention relates to a process for the preparation of a catalyst, said process comprising: a) a step of preparing an organic solution comprising: a metal precursor of a metal element selected from the elements of groups 3, 4 and 5 of the periodic table, such as tantalum and zirconium, and an additive, wherein said metal precursor and said additive are present in the organic solution in such amounts that the additive / metal molar ratio is greater than 2; b) a step of depositing said metal precursor onto an oxide substrate by contacting said organic solution with said oxide substrate; followed by c) a heat treatment step. The present invention also relates to the catalyst obtained and its use for the conversion of a feedstock comprising ethanol into butadiene.

This invention belongs to the technical field of inorganic functional antibacterial materials, and provides a rare earth composite antibacterial material and its preparation process. The material comprises spherical nano-zinc oxide substrate particles, rare earth oxide nanodomains distributed on and / or near the surface of these particles, an interface anchoring layer between them, and a surface compatibility layer coating the outer surface of the composite particles. The rare earth oxides are selected from one or more of CeO2, La2O3, Nd2O3, Sm2O3, and Y2O3. The process includes preparing spherical nano-zinc oxide through zinc salt atomization pyrolysis or aerosol reaction, followed by pre-anchoring treatment, introduction of rare earth salt adsorption and alkalization deposition, heat treatment to form nanodomains, and then surface compatibility treatment to obtain the product. This material exhibits high dispersion stability, the active components are not easily migrated or detached, and the antibacterial effect is long-lasting, making it suitable for coatings, plastics, fibers, and building material systems.

The application provides a diamond and aluminum nitride composite substrate high-frequency power load and a preparation method thereof, which comprises a composite substrate layer, a high-frequency power absorption and conversion structure formed on the composite substrate layer and used for realizing power absorption and impedance matching of a high-frequency signal, and a back electrode formed on a lower surface of the composite substrate layer opposite to the high-frequency power absorption and conversion structure and used for providing a grounding path and a heat dissipation path, wherein the composite substrate layer comprises a diamond substrate and an aluminum nitride film epitaxially grown on a surface of the diamond substrate to form a diamond and aluminum nitride heterojunction structure. The application can effectively solve the problem of excessively high junction temperature of an existing aluminum oxide substrate load and meet the demand of high-frequency and high-power application.

This invention provides a method for preparing infinite-layer nickel-based superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin films prepared using this method exhibit zero resistance below 20 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.

This invention relates to the field of radar communication filtering technology, and particularly to a modular alumina substrate low-pass filter and its fabrication method. The fabrication method includes generating substrate characteristic values ​​based on the warpage and surface roughness of the alumina substrate collected during heating; determining the corresponding adjustment method based on the degree of deviation, such as thickening the metal plating layer or increasing the density of thermally conductive vias; determining the brazing method between the alumina substrate and the metal casing based on the degree of deviation and processing classification to obtain the low-pass filter; determining whether to adjust the characteristic threshold during the brazing process based on the proportion of low-pass filters marked as low-power adaptable to the total number of low-pass filters within a preset period, and obtaining substrate migration values ​​and casing migration values ​​to determine the adjustment of the substrate characteristic threshold and / or casing characteristic threshold. This invention significantly improves the reliability of the fabrication method for the modular alumina substrate low-pass filter.

The application provides a substrate-loaded antiferromagnetic manganese-iridium intermetallic compound nanofilm and a preparation method and application thereof, and relates to the technical field of electrocatalytic materials.The substrate-loaded antiferromagnetic manganese-iridium intermetallic compound nanofilm comprises a substrate and an antiferromagnetic manganese-iridium intermetallic compound nanofilm formed by magnetron sputtering and loaded on the surface of the substrate; and the substrate comprises any one of a magnesium oxide substrate, a strontium titanate substrate and a metal niobium-doped strontium titanate substrate.The substrate-loaded antiferromagnetic manganese-iridium intermetallic compound nanofilm electrocatalytic material prepared by the application has super-high catalytic activity and excellent stability in oxygen evolution reaction, is low-sensitive to parameters such as the substrate type and the film thickness, and has strong material design flexibility.The preparation by using the magnetron sputtering process breaks the bottleneck of existing electrocatalytic materials in activity, stability and preparation cost, and provides a high-quality solution for the large-scale application of clean energy conversion and storage technology.

This invention provides a method and apparatus for localized anodizing patterning of graphene. The patterning method includes: providing a patterned oxide substrate mask with grooves of a preset pattern; bonding the oxide substrate mask to graphene, forming a contact interface and a non-contact interface between the oxide substrate mask and graphene; applying a temperature field and an electric field to the bonded oxide substrate mask and graphene, causing oxygen ions in the oxide substrate mask to migrate to the contact interface under the influence of the temperature field and the electric field, and performing anodizing etching at the contact interface to remove the graphene at the contact interface, thereby transferring the pattern of the oxide substrate mask to the graphene. This invention can achieve high-fidelity pattern transfer of graphene at the submicron level and can achieve wafer-level patterning of graphene.