292 results about "Oxide substrate" patented technology

A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.

A method is described for strengthening or restoring strength to a flat brittle oxide substrate which includes the steps of coating the edges of the brittle oxide substrate with a strengthening composition without coating a significate portion of the flat surfaces. The strengthen brittle oxide substrate such as glass and a window containing as the window pane the edge strengthen glass are also provided.

A method of making and the resulting non-metallic CMP conditioning pad comprising a non-metallic substrate and a single layer of abrasive particles bonded to the substrate by a non-metallic bonding medium. Preferred substrates include aluminum oxide and graphite. A bonding system employing finely powdered aluminum oxide particles mixed with a suitable adhesive is employed to bond the abrasive layer to the aluminum oxide substrate. Silicon carbide particles mixed into a compatible adhesive carrier including a polymer composition is preferred for bonding the abrasive particle layer to a graphite or carbide substrate.

A method is described for strengthening or restoring strength to a brittle oxide substrate which includes the steps of coating the brittle oxide substrate with an aqueous solution containing a silane-based composition, and curing the coating to form a transparent layer on the brittle oxide substrate. Also disclosed are novel compositions used to coat brittle oxide substrates, and silane-coated brittle oxide containers.

Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems incorporating the oxide material are provided.

Process for reducing charge leakage in a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on the semiconductor substrate to form an oxide/silicon interface having a first oxygen content adjacent the oxide/silicon interface; treating the bottom oxide layer to increase the first oxygen content to a second oxygen content adjacent the oxide/silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer. In another embodiment, process for reducing charge leakage in a SONOS flash memory device, including forming a bottom oxide layer of an ONO structure on a surface of the semiconductor substrate having an oxide/silicon interface with a super-stoichiometric oxygen content adjacent the oxide/silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer.

A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitaxy on a crystalline zinc oxide substrate. The zinc oxide layer incorporates a p-type dopant, such as nitrogen, in an atomic concentration adequate to provide p-type conduction. The p-type zinc oxide layer may further incorporate an atomic concentration of a compensating species, such as lithium, sufficient to electronically occupy excess donors therein so that the efficiency of the p-type dopant may be increased.

An alumina comprising composition protective overlayer (20) for protecting a ceramic matrix composite material (12) from a high temperature, moisture-containing environment. Alumina may be used as a protective overlayer to protect an underlying mullite layer to temperatures in excess of 1,500° C. The coating may have porosity of greater than 15% for improved thermal shock protection. To prevent the ingress of oxygen to an underlying ceramic material, an oxide barrier layer may be optionally disposed between the alumina coating and the ceramic material. Such a protective overlayer may be used for an article having a ceramic oxide or non-oxide substrate.

In a process of preparing a via in a semiconductor substrate wafer in which vias are landed on tungsten, and in which resist is stripped using plasma or chemical based processes that do not remove the veils formed during the etch, the improvement of concurrently removing veil material, controlling the interface of the tungsten, and stripping the resist, comprising:a) depositing and patterning tungsten on a substrate;b) depositing an oxide as an interlevel dielectric on the tungsten;c) patterning the oxide using photolithography and a photoresist;d) etching the oxide using a plasma generated etching method in which veils made up of metals, carbon based materials and oxide based materials are formed on the tungsten and sidewalls of the vias; ande) stripping the resist using a dry polymer removal method employing process gases and reducing gases to concurrently cause resist stripping, removal of the veils, and control of the tungsten interface.

A pearlescent pigment comprising a substrate and a first layer, wherein the first layer comprises iron oxide, wherein the iron has from about 1% to about 30% Fe(II) and from about 70% to about 99% Fe(III). A process for making these pearlescent pigment, comprise reducing a metal oxide substrate with a hydrogen source in the presence of a noble metal catalyst in a liquid medium. The pigments may be used in a variety of applications including cosmetics, plastics, automotive or architectural coatings.

The invention discloses a simple preparation method for a one-piece high load copper base catalyst, which belongs to the technical field of catalyst preparation. Precursors of a metal oxide and active metal are blended at high speed by using a colloid mill, the nucleation process and the crystallization process of precursors of a carrier and an active component are isolated to obtain highly dispersed hydroxide nanoparticle sol, and finally the one-piece high load copper base catalyst which is controllable in metal nucleus diameter and uniform in dispersion is prepared by roasting and reduction. The one-piece high load copper base catalyst is characterized in that nano metal copper is dispersed and anchored in a single magnesium oxide substrate, the specific surface area is 50 to 150 m<2>/g, and the percentage mass content of the copper is 50 to 90 %. After the catalyst is used for hydrogenation preparation of 1, 4-cyclohexanedimethanol by 1, 4-dimethyl cyclohexanedicarboxylic acid and hydrogenation preparation of furfuryl alcohol by furfural, the reaction conversion rate can reach 90 to 99%, and the selectivity to a main product reaches 90 to 99%.

A capacitor element includes a pair of conductor layers, a plurality of generally tube-shaped dielectric substances, a first electrode outside the dielectric substances and second electrodes in the insides thereof, and insulation caps for insulating the first electrode from the conductor layer, wherein an electrode material is filled in gaps of a structure of an oxide base material resulting from anodic oxidation of a metal, and then, the structure is removed and replaced by a high permittivity material.

A process for the release of a biologically active species comprising the steps of:

• • providing a mesoporous oxide-based material having structural order and at least one level of porosity;
  • fixing or immobilizing said biologically active species in said ordered mesoporous oxide; and
  • providing said ordered mesoporous oxide with said fixed or immobilized biologically active species in vivo thereby realizing intraluminally induced substantially pH-independent supersaturation of said biologically active species resulting in enhanced transepithelial transport; wherein said biologically active species is a poorly soluble therapeutic drug classified as belonging to Class II or Class IV of the Biopharmaceutical Classification System and said ordered mesoporous oxide has a pore size in the range of 4 to 14 nm.

The present invention provides a method for storing thermal energy, such as solar energy, as a fuel, by heating a reactive oxide substrate to a first temperature, such that the reactive oxide substrate is reduced, wherein the reactive oxide substrate includes a cerium oxide. The method also includes contacting the reduced reactive oxide substrate at a second temperature with a gas mixture including carbon dioxide, wherein the first temperature is greater than the second temperature, thereby preparing the fuel. The present invention also provides a method for preparing the reactive oxide substrates by heating a mixture including a doped cerium oxide and a pore-forming agent, such that pores are formed in the doped cerium oxide, thereby forming the reactive oxide substrate.

Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1-xAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.