61 results about "Oxide substrate" patented technology

The present application provides a positive electrode material, and a preparation method therefor and the use thereof. The positive electrode material of the present application comprises a substrate and an island-shaped coating layer provided on the surface of the substrate, wherein the substrate is a lithium-ion layered oxide having an O2 stacking structure; and the coating layer is selected from one or more of the oxides of the element M, the element M being selected from one or more of Al, Mg, Ti, Y, Zr, La, Ce, Pr, Si, Sn, Cu, W, Sm, Gd, In, Zn, and Fe. In the positive electrode material of the present application, by coating the surface of the lithium-ion layered oxide substrate having an O2 stacking structure with the specific island-shaped oxide coating layer, the positive electrode material is made to have relatively high specific capacity, structural stability and positive electrode interface stability at high voltages, thereby obtaining good cycling performance.

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.

The invention belongs to the field of hydrogen sensors, and particularly relates to an MEMS hydrogen sensor based on a high-entropy alloy and a preparation method of the MEMS hydrogen sensor. The hydrogen sensor comprises an insulating substrate, an interdigital electrode and a hydrogen sensitive layer, the hydrogen sensitive layer is formed by compounding high-entropy alloy nanoparticles composed of at least five transition metal elements and a semiconductor metal oxide substrate, and the high-entropy alloy nanoparticles are uniformly dispersed on the surface of the semiconductor metal oxide substrate to form a heterojunction; the atomic percent of each transition metal element in the high-entropy alloy nanoparticles is 5%-35%; the semiconductor metal oxide substrate is of a SnO2 or ZnO nano structure, and the specific surface area is larger than or equal to 50 m < 2 > / g. The preparation method is the preparation method of the hydrogen sensor. The hydrogen sensor provided by the invention has an ultralow hydrogen detection limit, the response speed is within a second level, the consumption of noble metal is greatly reduced, and the activity attenuation in a high-temperature environment is small.

A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed between the semiconductor section and the first face and having a reflective spectrum configured to provide an optical window; a first DBR mirror; and a second DBR mirror disposed at a curved surface of the second face. The first DBR mirror, the semiconductor section, the dielectric filter layer, the oxide substrate, and the second DBR mirror are arranged in a first axial direction to form an extended cavity. The semiconductor section is disposed between the dielectric filter layer and the first DBR mirror, and includes a p-type III nitride region, an n-type III nitride region, and a III nitride active region between the p-type and n-type III nitride regions.

The invention belongs to the field of microwave sensors, and particularly relates to a wireless passive tunable temperature sensor in a severe environment. The objective of the invention is to optimize the adjustment adaptability of the wireless passive temperature sensor in a severe environment, thereby improving the measurement precision. The temperature sensor comprises an upper-layer metal structure, an aluminum oxide substrate, a lower-layer metal structure and a photosensitive structure. The upper-layer metal structure is arranged on the surface of one side of the aluminum oxide substrate, and the lower-layer metal structure and the photosensitive structure are arranged on the surface of the other side of the aluminum oxide substrate; the surfaces of the sides, away from the upper metal structure, of the lower metal structure and the photosensitive structure are covered with transparent aluminum oxide film structures; and the photosensitive structure is a silicon-doped material and is configured to adjust the dielectric constant of the equivalent LC circuit of the temperature sensor under the condition of receiving near-infrared light pumps with different powers, so that the resonant frequency and the amplitude are controllably changed.

The invention discloses a post-treatment liquid and application thereof in an anode foil formation post-treatment process, and the post-treatment liquid comprises the following components in percentage by mass: 0.1-5% of a main film-forming agent, 0.05-3% of a synergistic stabilizer and the balance of a solvent, the main film-forming agent is selected from at least one of a waterborne polyurethane emulsion and a silane coupling agent; the synergistic stabilizer is selected from at least one of organophosphate, molybdate and tungstate. The main film-forming agent and the synergistic stabilizer are compounded to obtain the post-treatment liquid, on one hand, the synergistic stabilizer is firmly combined with an aluminum oxide substrate to carry out deep passivation treatment on an oxidation film on the surface of the anode foil, and on the other hand, the synergistic stabilizer is subjected to network crosslinking with a hydrophobic protection layer formed by the main film-forming agent; the three-dimensional composite protective film can effectively isolate water molecules, repair microdefects on the surface of an oxidation film, prevent the phenomena of specific volume attenuation, leakage current increase and the like of the anode foil, and improve the long-term working reliability of the capacitor.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The invention belongs to the technical field of polymer light diffusion plates, and relates to a micro-nano composite structure polymer light diffusion plate and a preparation method and application thereof.The preparation method comprises the following steps that S1, an aluminum substrate is sequentially subjected to high-strength oxidation, denudation, mild oxidation and chambering treatment; constructing an aluminum oxide substrate with a micron pit and ordered nano gradient hole composite structure; s2, nickel is deposited on the aluminum oxide substrate through electrochemical deposition; further modifying fluorosilane to obtain a flexible reusable nickel template; s3, coining a flexible reusable nickel template on the polymer plate, or spin-coating the pre-polymerized precursor on the surface of the polymer plate and then coining; and after curing, stripping the flexible reusable nickel template to obtain the polymer light diffusion plate with the micro-nano composite structure. The micro-nano composite structure polymer light diffusion plate prepared by the invention has relatively high total light transmittance and diffusion light transmittance, has efficient radiation cooling and super-hydrophobic antifouling capabilities, and is used in LED illumination display and / or heat dissipation.

A method includes forming a semiconductor region, forming a gate spacer over the semiconductor region, forming a source / drain region aside of the semiconductor region, wherein the source / drain region is of p-type, and forming a gate dielectric over the semiconductor region. The gate dielectric is formed in a space between opposing portions of the gate spacer. A ruthenium oxide layer is formed over the gate dielectric, and acts as a part of a work-function layer of a gate electrode. The method further includes incorporating silicon into the ruthenium oxide layer.

The present application relates to the field of optical technology, more particularly to a visible to mid-infrared super-wideband absorber and a preparation method thereof, the method comprising the following steps: self-assembling polystyrene microspheres on a polyimide substrate to form a monolayer hexagonal close-packed structure substrate, and then forming a nano-cone array substrate through ion etching; placing a copper substrate into a coating chamber and introducing argon, and sputtering to obtain a reflection layer; placing a zirconium substrate into the coating chamber and introducing argon and oxygen, and sputtering to obtain a first metal absorption film layer; continuously introducing argon and oxygen, and sputtering to obtain a second metal absorption film layer; continuously introducing argon and oxygen, and sputtering to obtain a third metal absorption film layer; placing an aluminum oxide substrate into the coating chamber, and then introducing argon, and sputtering to obtain a dielectric antireflection layer, thereby forming the absorber. The present application can have extremely high absorption in the visible light and near-infrared regions, and has good angle tolerance, polarization insensitivity, bending resistance and heat resistance.

The invention relates to the field of electronic ceramic substrates, provides a preparation method of a black aluminum oxide substrate, and solves the defects of low heat conductivity and low mechanical strength of the existing black aluminum oxide substrate due to the defects of a preparation process. The preparation method comprises the following steps: (1) preparing raw materials; (2) preparing slurry; (3) tape casting; (4) discharging glue; (5) sintering; (6) annealing; and (7) surface treatment.

The present invention provides a method for producing oxide-based materials that can reduce the degradation of their properties. [Solution] The method for manufacturing oxide-based materials includes a step of firing a lithium-containing material, the firing step of placing a firing jig containing the material into a furnace and firing the material while flowing an atmospheric gas into the furnace. Multiple holes connecting the inside and outside of the firing jig are provided in the firing jig. The holes provided in the firing jig are located on the upstream and downstream sides of the atmospheric gas, respectively. At this time, the material can be fired while transporting the firing jig toward the upstream side of the atmospheric gas.

This invention discloses a hole transport material, its preparation method, and its applications, relating to the field of photovoltaic materials technology. The hole transport material provided by this invention has the chemical formula shown in Formula I. The conjugated direction groups used as end groups are selected from carbazole, phenothiazine, phenoxazine, or dibenzocarbazole groups, which possess excellent carrier transport performance. Simultaneously, this invention selects α-hydroxyphosphonic acid groups as unique anchoring groups for self-assembled molecules, enabling the self-assembled molecules to form a stronger anchor with the metal oxide substrate, thereby forming a dense and uniform self-assembled layer, significantly improving the photoelectric conversion efficiency and stability of perovskite solar cells. The α-hydroxyphosphonic acid groups also have an interface passivation effect. This hole transport material, as a perovskite material layer in HTMs (Hyperoxyterephthalic Acid Transformers) cells or modules, helps improve cell efficiency and lifespan, optimize cell structure, reduce costs, and achieve large-area production and industrialization.

The application discloses a kind of composite positive electrode materials, including layered oxide and cladding layer, cladding layer is coated outside layered oxide, layered oxide general formula is NaMeO2, wherein, Me is one or several of Ni, Fe, Mn, Co and the combination of Cu, cladding layer is sulfur-doped carbon-coated Cu-Sn alloy, and S-Sn chemical bond exists in cladding layer.The application also discloses its preparation method, which is to mix and grind layered oxide, Cu powder, Sn powder, organic carbon source solid powder and sulfur source solid powder, and then sinter at 500-600 DEG C for 2-3 hours in a protective atmosphere.The application also discloses a positive plate and a sodium-ion battery with the composite positive electrode material.The application enhances the bonding force between the cladding layer and the layered oxide substrate, and the S-Sn bond effectively inhibits the interlayer peeling of the cladding layer material during the cycle process, thereby improving the battery capacity retention rate.

The invention discloses a two-dimensional strain superlattice material and a preparation method and application thereof, and belongs to the technical field of two-dimensional semiconductor material preparation. The invention discloses a method for preparing a two-dimensional strain superlattice material. The method comprises the following steps: S1, carrying out heat treatment on a single crystal aluminum oxide substrate in an air atmosphere, and then carrying out heat treatment in a sulfur steam atmosphere to obtain a surface structure with sulfur passivation; and S2, a transition metal element source and a non-metal source are subjected to chemical vapor deposition on the nano-structure substrate in a protective gas atmosphere to form a thin film, and then the thin film is transferred to the substrate to obtain the two-dimensional strain superlattice material with the nano periodic folds. The invention provides a method for growing a high-quality two-dimensional strain superlattice material by using a single crystal aluminum oxide substrate with a nano-structure surface, a nano-structure is formed by heat treatment of the single crystal aluminum oxide substrate, and a chemical vapor deposition reaction is carried out on the substrate with transition metal and a non-metal source in the atmosphere of protective gas. Therefore, the high-quality two-dimensional strain superlattice material can be obtained.

A manufacturing method of a memory device, including forming a hard mask layer over a substrate, in which the hard mask layer is made of an oxide-based material, and the hard mask layer has a first width, forming a trench in the substrate through the hard mask layer, performing a first cleaning process to the substrate, in which the first width of the hard mask layer is reduced to a second width after the first cleaning process is complete, forming a first dielectric layer lining the trench, forming a first word line layer in the trench, forming a second word line layer in the trench and over the first word line layer, forming a cap layer in the trench and over the second word line layer, removing the hard mask layer, and forming a gate contact layer over the cap layer.

The invention discloses a preparation method of a gallium-doped zinc oxide single crystal material, and belongs to the field of semiconductors. Comprising the following steps: 1) performing standard cleaning on a zinc oxide single crystal, and blow-drying the zinc oxide single crystal with nitrogen to serve as a substrate; 2) depositing a gallium oxide film on the surface of the zinc oxide substrate by adopting a magnetron sputtering method; and 3) putting the deposited substrate into laser irradiation equipment, and performing continuous irradiation through two-dimensional strip-shaped light spot laser, thereby completing the preparation of the gallium-doped zinc oxide single crystal material. Gallium doping of the zinc oxide single crystal is successfully achieved through laser induction, and the conductivity of the zinc oxide single crystal can be effectively adjusted. The method has the advantages of being simple in process, convenient to operate, controllable in doping area and concentration and capable of being completed in one step, and has high industrial application value.

A catalyst may include a metal oxide substrate comprising a nickel species, wherein an exposed surface of the catalyst comprises at least some of the nickel species and the exposed surface is substantially nonporous.

The semiconductor structure disclosed by the invention comprises a semiconductor structure, the semiconductor structure includes a backside dielectric layer, a backside etch stop layer (ESL) over the backside dielectric layer, a first source / drain feature and a second source / drain feature over the backside ESL and spaced apart from each other along a first direction, a front side source / drain contact disposed over the first source / drain feature and the second source / drain feature, a backside contact feature through the backside dielectric layer and the backside ESL to couple to the first source / drain feature, a through-via extending through the backside dielectric layer and the backside ESL, a base fin between the backside ESL and the second source / drain feature; and an isolation feature including a portion extending along a sidewall of the base fin. The backside contact feature is in contact with the through-via in the backside dielectric layer, and the isolation feature includes an oxide-based material. The embodiment of the invention also relates to a method for forming the semiconductor structure.

The invention belongs to the technical field of partial discharge ultraviolet detection, and particularly relates to a nickel oxide / zinc gallate heterojunction solar-blind ultraviolet photoelectric detector and application thereof. The invention discloses a nickel oxide / zinc gallate heterojunction solar-blind ultraviolet photoelectric detector, and the detector comprises an aluminum oxide substrate; the zinc gallate epitaxial layer grows on the aluminum oxide substrate through metal organic chemical vapor deposition; the lithium-doped p-type nickel oxide layer grows on the zinc gallate epitaxial layer through a pulse laser deposition technology; and the titanium / gold metal electrode layer is deposited on the lithium-doped p-type nickel oxide layer. The device has a high rectification ratio of 106, an ultralow dark current of 0.1 pA under a bias voltage of 6V, an excellent detection rate of 7.1 * 10 < 18 > Jones and an extremely low noise equivalent power of 2.56 * 10 <-19 > W / Hz < 1 / 2 >, so that the device becomes an ideal candidate material for partial discharge detection, security monitoring, environmental monitoring, space exploration and other applications.

The invention provides an aluminum oxide base material magnetron sputtering through hole side wall adhesive force improving technology which comprises the following steps that S1, an aluminum oxide base plate is provided, and the aluminum oxide base plate is provided with a through hole; s2, the aluminum oxide substrate is cleaned; s3, forming a self-assembled monomolecular layer on the side wall of the through hole of the aluminum oxide substrate; s4, performing magnetron sputtering on the aluminum oxide substrate on which the self-assembled monomolecular layer is formed, and depositing an adhesion layer and a seed layer; and S5, performing patterning and electroplating on the aluminum oxide substrate after magnetron sputtering. According to the invention, the molecular-level interface engineering is realized by constructing the self-assembled monomolecular layer on the side wall of the aluminum oxide through hole. The molecular layer is in bridge connection with the ceramic substrate and the metal layer in a chemical bonding mode, and the interface bonding force and stability are remarkably enhanced.

This invention proposes a boron-phosphorus co-doped multi-element alloy catalyst supported on a metal oxide substrate, its preparation method, and its application. It belongs to the technical field of sodium borohydride hydrolysis hydrogen production materials. The method involves loading cobalt salts (such as cobalt chloride or cobalt nitrate), iron salts (such as ferric chloride or ferric nitrate), and hypophosphite (such as sodium hypophosphite) onto a support (such as γ-alumina or titanium dioxide) using an initial wet impregnation method. Sodium borohydride solution is added for chemical reduction, and boron is added for doping. After washing the reduction product, the catalyst is dried to obtain the supported boron-phosphorus co-doped multi-element alloy catalyst. When used as a sodium borohydride hydrolysis hydrogen production catalyst, it provides a maximum hydrogen production rate of 12729.78 mL·g under optimal conditions. cat ‑1 ·min ‑1 It produces 100% of the theoretical hydrogen yield and features good catalytic performance, simple preparation method, abundant raw materials, and low cost.

The present invention relates to a transparent metal oxide substrate and a method of manufacturing the same, and particularly, to a low-reflective coating and anti-fouling coating technology. According to an embodiment, it is possible to provide a transparent metal oxide substrate including: a transparent substrate; and an aluminum compound bilayer consisting of a first coating layer disposed on the transparent substrate with a refractive index of n1 as a high refractive index compound layer and a second coating layer disposed on the first coating layer with a refractive index of n2 as a low refractive index compound layer, and wherein the refractive indices satisfy a condition of n1>n2.

The invention provides a non-vacuum preparation method of an infinite-layer nickel-based superconducting thin film. The main conception of the method is as follows: dissolving a metal cation soluble precursor in a solvent according to a stoichiometric ratio, and spin-coating the metal cation soluble precursor on the surface of a single crystal nickel-based perovskite oxide substrate to form a thin film precursor; annealing in a high oxygen pressure atmosphere to obtain a thermodynamic metastable-phase perovskite structure intermediate; and finally, converting the thin film into the infinite-layer nickel-based superconducting thin film by using a reduction condition. The method has the advantages that the dependence on vacuum equipment is completely avoided, the operation is simple and convenient, the cost is low, and flexible regulation and high-repeatability preparation of film components can be realized. The prepared infinite-layer nickel-based superconducting thin film has an abnormal superconducting characteristic, the superconducting temperature of the thin film can break through the McMilan limit, and the thin film shows a high upper critical field and critical current density. The material has application value in the fields of superconducting quantum interference devices (SQUID), strong field magnet coils, high-frequency low-loss power transmission cables and magnetic confinement nuclear fusion device magnet systems.

The present application provides a kind of high C 2+ The application discloses a preparation method, product and application of a selective carbon dioxide electro-reduction catalyst Ag / AgBr / Cu2O. The preparation method adopts a one-pot solvothermal reduction method, and by controlling the reaction conditions, silver species is synchronously generated in the form of metallic silver and silver bromide and firmly combined with a cuprous oxide substrate. The method route is simple, the reaction conditions are mild, and the product is controllable. When the obtained catalyst is applied to a carbon dioxide electro-reduction reaction, the introduction of Ag and the doping of Br in the catalyst produce a synergistic catalytic effect, effectively promote the C-C coupling path, and significantly improve the C 2+ product selectivity, the C 2+ product faraday efficiency reaches 82.7%, and the local current density reaches 121.7 mA·cm ‑2 -2. At the same time, the hydrogen evolution side reaction is effectively inhibited. The research provides a new idea for designing a high-performance CO2 conversion catalyst, and has important scientific value and industrial application potential.

A catalyst may include a metal oxide substrate comprising a nickel species, wherein an exposed surface of the catalyst comprises at least some of the nickel species and the exposed surface is substantially nonporous.

The invention discloses a preparation method of a catalyst for producing hydrogen peroxide through oxygen deficiency tandem piezoelectric-mechanical redox, and the preparation process of the catalyst comprises the following steps: firstly, constructing a zinc oxide substrate with a litchi-shaped structure through a water-phase thermally-induced self-assembly reaction; then introducing oxygen defects with controllable content on the surface of zinc oxide by adopting a liquid-phase mediated chemical reduction mode; and finally, performing in-situ auto-polymerization on the surface of the defective zinc oxide to form a polydopamine coating, thereby obtaining the target catalyst. The catalyst can efficiently and highly selectively prepare hydrogen peroxide through ultrasonic excitation under the conditions of pure water and normal temperature, has the advantages of mild reaction conditions, high generation rate, good stability, environmental protection and the like, and is suitable for the application scene of distributed hydrogen peroxide in-situ preparation.

A semiconductor structure according to the present disclosure includes a semiconductor structure including a backside dielectric layer, a backside etch stop layer (ESL) over the backside dielectric layer, a first source / drain feature and a second source / drain feature over the backside ESL and spaced apart from one another along a first direction, a frontside source / drain contact disposed over the first source / drain feature and the second source / drain feature, a backside contact feature through the backside dielectric layer and the backside ESL to couple to the first source / drain feature, a through via extending through the backside dielectric layer and the backside ESL, a base fin between the backside ESL and the second source / drain feature; and an isolation feature including a portion extending along sidewalls of the base fin. The backside contact feature interfaces the through via in the backside dielectric layer and the isolation feature includes an oxide-based material.

The present invention provides a method for manufacturing oxide-based materials that can reduce yield deterioration. [Solution] The method for producing an oxide-based material comprises a step of firing a lithium-containing material, the step of firing the material placed on a firing jig in a furnace, the firing jig being made of metal at least in the part that comes into contact with the material. The metal can be mainly composed of at least one of W, Mo, and Ni. The metal composition can be such that the proportions of Si, Al, Cr, and Ti are each less than 1 wt%.

This invention provides a method for preparing infinite-layer nickel-based high-temperature superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based high-temperature superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin film prepared using this method exhibits zero resistance below 40 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.