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Growing method of GaN-based light emitting diode epitaxial wafer

A technology of light-emitting diodes and growth methods, applied in the field of growth of GaN-based light-emitting diode epitaxial wafers, can solve problems such as insufficient stress release, high-density defects, lattice mismatch, etc., and achieve relief of concave deformation, crystal quality and optoelectronics Effects of performance improvement and temperature difference reduction

Active Publication Date: 2017-05-24
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] There is a lattice mismatch between the GaN-based epitaxial wafer and the sapphire substrate, resulting in high-density defects and a large thermal expansion coefficient, insufficient stress relief, and resulting in uneven surface of the epitaxial wafer
Compared with small-sized epitaxial wafers, large-sized epitaxial wafers have higher warpage and are easily broken, which seriously restricts the development of large-sized epitaxial wafers

Method used

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  • Growing method of GaN-based light emitting diode epitaxial wafer
  • Growing method of GaN-based light emitting diode epitaxial wafer
  • Growing method of GaN-based light emitting diode epitaxial wafer

Examples

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Embodiment 1

[0028] An embodiment of the present invention provides a method for growing a GaN-based light-emitting diode epitaxial wafer, see figure 1 , the growth method includes:

[0029] Step 101: Provide a substrate.

[0030] In this embodiment, the substrate may be a sapphire substrate.

[0031] Step 102: growing a buffer layer on the substrate.

[0032] In this embodiment, the buffer layer may be a GaN layer.

[0033] Step 103: growing an undoped GaN layer on the buffer layer.

[0034] Step 104: growing an n-type layer on the undoped GaN layer.

[0035] In this embodiment, the n-type layer may be a GaN layer doped with Si.

[0036] Step 105: growing a stress release layer on the n-type layer.

[0037] In this example, see figure 2 , the stress release layer includes a first sublayer 11 , a second sublayer 12 and a third sublayer 13 grown on the n-type layer in sequence. The first sublayer 11 is Si-doped In x Ga 1-x N layers, 0≤xy Ga 1-y N layer 12a and GaN layer 12b, 0z ...

Embodiment 2

[0058] An embodiment of the present invention provides a method for growing a GaN-based light-emitting diode epitaxial wafer, and the growth method provided in this embodiment is a specific realization of the growth method provided in Embodiment 1. In this embodiment, high-purity hydrogen (H 2 ) or nitrogen (N 2 ) as carrier gas, trimethylgallium (TMGa), trimethylaluminum (TMAl), trimethylindium (TMIn) and ammonia (NH 3 ) as Ga, Al, In and N sources respectively, with silane (SiH 4 ), Magnesium (Cp 2 Mg) as n-type and p-type dopants, respectively.

[0059] Specifically, see image 3 , the growth method includes:

[0060] Step 201: The temperature of the substrate is first raised to 500°C, then raised to 800°C and stabilized for 30s, then raised to 1000°C and stabilized for 30s, then raised to 1230°C and stabilized for 10 minutes, and then heat-treated in a pure hydrogen atmosphere.

[0061] It should be noted that the purpose of heat treatment is to clean the substrate s...

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Abstract

The invention discloses a growing method of a GaN-based light emitting diode epitaxial wafer, and the growing method belongs to the technical field of semiconductors. The growing method comprises the steps of: providing a substrate; and successively growing a buffer layer, an un-doped GaN layer, an n-type layer, a stress release layer, a multi-quantum well layer, a p-type electron blocking layer, a p-type layer and a p-type contact layer on the substrate, wherein the stress release layer comprises a first sub-layer, a second sub-layer and a third sub-layer which are successively grown on the n-type layer, the first sub-layer is an In<x>Ga<1-x>N layer doped with Si, 0<=x<1, the second sub-layer comprises In<y>Ga<1-y>N layers and GaN layers which are laminated alternately, 0<y<1, the third sub-layer is an In<z>Ga<1-z>N layer doped with Si, 0<=z<1, the growth pressure of the second sub-layer is lower than that of the first sub-layer, and the growth pressure of the third sub-layer is lower than that of the first sub-layer. The growing method of the GaN-based light emitting diode epitaxial wafer improves the warping degree and enhances the crystal quality and the photoelectric performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing GaN-based light-emitting diode epitaxial wafers. Background technique [0002] Light Emitting Diodes (English: Light Emitting Diodes, referred to as: LED) has the advantages of small size, colorful colors, and long service life. It is a very influential new product in the emerging industry of information optoelectronics. , backlight, toys and other fields. GaN is an ideal material for making LEDs. On the one hand, group III nitrides represented by GaN are wide-bandgap semiconductors with direct band gaps, which have high thermal conductivity, high luminous efficiency, stable physical and chemical properties, and can realize P-type or N-type The advantages of doping, on the other hand, the quantum well structure composed of GaN's multi-element alloy InGaN and GaN, not only the emission wavelength can cover the entire visible light region, but also has ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0066H01L33/0075H01L33/325
Inventor 杨兰万林胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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