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Growth method for controlling grain size of polycrystalline diamond by microwave CVD method

A polycrystalline diamond, grain size technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve problems such as processing difficulties, multi-crack grains, defects, etc., to reduce lattice defects, reduce Effects of growth stress and increased growth rate

Inactive Publication Date: 2021-11-26
天津本钻科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This method provides a method for controlling the growth of polycrystalline diamond grain size by microwave CVD, which solves the technical problems of large diamond film grains obtained in the prior art, which lead to post-processing difficulties, and are prone to lattice defects and multi-crack grains.

Method used

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  • Growth method for controlling grain size of polycrystalline diamond by microwave CVD method
  • Growth method for controlling grain size of polycrystalline diamond by microwave CVD method
  • Growth method for controlling grain size of polycrystalline diamond by microwave CVD method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] A kind of microwave CVD method controls the growth method of polycrystalline diamond grain size:

[0051] Pretreatment: Grind the surface of the single crystal silicon substrate with diamond micropowder, and grind for 20 minutes to produce uniform scratches; then place the substrate in alcohol, acetone, and alcohol for ultrasonic cleaning for 10 minutes, and finally use a dryer to dry the substrate drying.

[0052] Open the equipment chamber door, place the processed substrate on the molybdenum holder and place it on the water-cooled deposition table in the reaction chamber, close the chamber door, and vacuum the reaction chamber to a background vacuum of 1×10 -2 below torr.

[0053] Start to feed hydrogen into the reaction chamber, adjust the reaction pressure to 5-10torr, turn on the microwave power supply, adjust the microwave input power to 600-1000W, and excite the plasma.

[0054] Adjust the microwave power and reaction pressure so that the substrate temperature...

Embodiment 2

[0060] A kind of microwave CVD method controls the growth method of polycrystalline diamond grain size:

[0061] Pretreatment: Grind the surface of the molybdenum substrate with diamond micropowder, and grind for 20 minutes to produce uniform scratches; then place the substrate in alcohol, acetone, and alcohol for ultrasonic cleaning for 10 minutes, and finally use a dryer to dry the substrate drying.

[0062] Open the equipment chamber door, place the processed substrate on the molybdenum holder and place it on the water-cooled deposition table in the reaction chamber, close the chamber door, and vacuum the reaction chamber to a background vacuum of 1×10 -2 below torr.

[0063] Start to feed hydrogen into the reaction chamber, adjust the reaction pressure to 5-10torr, turn on the microwave power supply, adjust the microwave input power to 600-1000W, and excite the plasma.

[0064] Adjust the microwave power and reaction pressure so that the substrate temperature is in the r...

Embodiment 3

[0070] A kind of microwave CVD method controls the growth method of polycrystalline diamond grain size:

[0071] Pretreatment: Grind the surface of the single crystal silicon substrate with diamond micropowder, and grind for 20 minutes to produce uniform scratches; then place the substrate in alcohol, acetone, and alcohol for ultrasonic cleaning for 10 minutes, and finally use a dryer to dry the substrate drying.

[0072] Open the equipment chamber door, place the processed substrate on the molybdenum holder and place it on the water-cooled deposition table in the reaction chamber, close the chamber door, and vacuum the reaction chamber to a background vacuum of 1×10 -2 below torr.

[0073] Start to feed hydrogen into the reaction chamber, adjust the reaction pressure to 5-10torr, turn on the microwave power supply, adjust the microwave input power to 600-1000W, and excite the plasma.

[0074] Adjust the microwave power and reaction pressure so that the substrate temperature...

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Abstract

The invention relates to a growth method for controlling the grain size of polycrystalline diamond by a microwave CVD method, which comprises the following steps: in a deposition process, setting N groups of time periods, and continuously introducing mixed gases with different volume ratios into each group of time periods after the first group of time periods; along with the increase of the time periods, enabling the volume ratio of each gas in the mixed gas introduced after the N group of time periods to be higher than the volume ratio of the corresponding gas introduced after the (N-1) group of time periods; and after the N group of time periods, continuously introducing the mixed gas based on the volume ratio of each gas in the mixed gas until the growth is finished. According to the method, the carbon source concentration and the oxygen concentration are gradually increased in different time periods, the nucleation rate of the diamond is stepwise increased to control the grain size of the diamond, and therefore the quality of a diamond film is improved; meanwhile, the growth rate of the diamond film can be increased step by step, and lattice defects of the epitaxial layer are reduced, so that the growth stress can be reduced, and the complete crack-free diamond film can be obtained.

Description

technical field [0001] The method belongs to the technical field of diamond preparation by chemical vapor deposition, and in particular relates to a growth method for controlling the grain size of polycrystalline diamond by microwave CVD. Background technique [0002] Due to its excellent properties such as high hardness, high thermal conductivity, high chemical inertness, high optical transparency, high band gap and high carrier concentration, diamond is widely used in mechanical processing, heat sinks of high-power devices, and high-power wave-transparent windows. It has great application value in high-tech fields such as semiconductor devices and semiconductor chips. [0003] In the above applications, not only the thickness and quality of the diamond film are required, but also the surface morphology and smoothness of the diamond film. Therefore, the prepared diamond film needs to be post-processed such as grinding and polishing to meet the use requirements. In the post...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/14C30B29/04
CPCC30B28/14C30B29/04
Inventor 李庆利甄西合赵丽媛徐悟生刘畅朱逢旭刘得顺杨春晖
Owner 天津本钻科技有限公司
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