InGaN epitaxy film and growth method and application in solar cell

Abstract

The high-crystal InGaN monocrystal epitaxial membrane comprises: with MOCVD system, at 500-700Deg, growing the 20-200nm low-temperature GaN buffer on sapphire substrate, growing high-crystal 1-80 mum InxGa1-x (0<=x<=1); then, growing high-quality InxGa1-xN on buffer layer at 500-1050Deg; wherein, controlling the growth pressure in 0-700Torr,special in 300-700Torr. As an application, the solar cell uses the In0.3Ga0.7N film, and MSM electrode structure.

Description

technical field [0001] The present invention relates to the structure and growth method of a novel semiconductor material for solar cells. In particular, a new type of solar cell material, In x Ga 1-x N's method. technical background [0002] With the rapid development of productivity, the world's demand for energy is increasing violently, and economic development is increasingly dependent on energy. Traditional energy sources (such as coal, oil, etc.) are non-renewable resources. After years of exploitation, the reserves of these energy sources are currently decreasing day by day, and will eventually be used up. In addition, the construction of hydroelectric power stations will destroy the ecological balance, and the combustion of fossil fuels will produce a large amount of waste gas, which not only causes air pollution, but also makes the global climate more and more abnormal. These environmental problems have also attracted the attention of ...

AI Technical Summary

Problems solved by technology

[0007] Therefore, InGaN is an excellent material that is very suitable for manufacturing solar cells, but since the research on it has just started, many characteristics of this material are still under study, especially the solar cells prepared with it have not been reported in the literature.

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