The invention discloses a growth method of
gallium oxide crystals, and belongs to the technical field of
crystal growth. According to the method, the
crystal growth space is arranged below the mold for growth, so that
pollution of
raw material volatile matters to a growth interface is fundamentally avoided; an
oxygen-containing gas flow is accurately supplied to a
gallium oxide melt in a capillary slit through a gas path channel specially arranged above the mold, so that the oxidation volatilization cost of an iraurita part is greatly reduced while the
crystal oxygen vacancy is effectively inhibited; remote
continuous feeding is carried out through the
raw material supply device located above the
crucible, the limitation of the
melt depth on the feeding amount is overcome, and the interference of the feeding process on a
core temperature field is extremely small; by controlling the relative positions of the mold and the
crucible in the vertical direction, the low-cost, flexible and dynamic adjustment of the
temperature gradient of the growth interface is realized, so that the
optimal growth requirements of various stages of
diameter shrinkage, seeding, shouldering and equal
diameter of the crystal are met; after the growth is finished, the crystal can be subjected to in-situ uniform annealing in the straight-through cavity in the
crucible, and the stress is fully released.