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Method for fast stripping of graphene

A graphene, exfoliating graphene technology, applied in graphene, nano-carbon and other directions, can solve the problems of pollution, corrosion of metal substrates, easy to produce cracks, etc., to achieve the effect of promoting basic research, short peeling time, and low cost

Inactive Publication Date: 2014-04-23
HUAZHONG UNIV OF SCI & TECH
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  • Claims
  • Application Information

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Problems solved by technology

There are several problems in this process. One is time-consuming, which usually takes several to ten hours; the other is the waste of transition metals, which needs to completely corrode the metal substrate; the third is the damage and pollution of graphene, which takes a long time to corrode. A large number of impurity particles will be attached to the graphene, and the peeling process is very easy to cause cracks, which greatly affects the application of graphene
It can be seen that the defects in the current graphene exfoliation technology restrict its basic research and application.

Method used

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  • Method for fast stripping of graphene

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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0021] The invention provides a method for growing graphene on a nickel sheet without damage and rapid stripping and reusing the nickel sheet to grow graphene again. Such as figure 1 As shown, the method is applicable to chemical vapor deposition (thermal, plasma-enhanced) graphene grown on nickel sheets. By controlling the concentration of the ferric chloride solution in the etching soluti...

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Abstract

The invention provides a method for fast stripping of graphene. The method includes the steps: S1, growing graphene on a nickel sheet by a chemical vapor deposition method with the growth temperature of 750 DEG C-1000 DEG C and the growth time of 10-30 minutes, during growth, introducing gases comprising 10-80 sccm of methane and 5-10 sccm of hydrogen gas, and keeping the growth pressure of the atmospheric pressure; and S2, immersing the nickel sheet attached with graphene in a ferric chloride solution, and carrying out electrochemical corrosion to obtain the stripped graphene. Graphene can be stripped from the substrate nickel sheet without damage and within a time from tens of seconds to a few minutes. A new rapid way is provided for basic research and application of graphene. The method is simple in operation, and can quickly transfer graphene to any substrate; the stripped graphene has no damage and no impurities; and the nickel sheet having graphene stripped can be continued to be used for preparing graphene.

Description

technical field [0001] The invention belongs to the technical field of nano-conductive thin film materials, and more specifically relates to a new method for rapidly stripping graphene and nickel sheets for reuse after growing graphene on nickel sheets by chemical vapor deposition. Background technique [0002] Since 2004, when Geim et al. from the University of Manchester in the United Kingdom prepared and observed single-layer graphene on a piece of graphite for the first time by mechanical separation method, the research boom of graphene materials has started. Graphene is stacked from a single layer of atoms and has a two-dimensional honeycomb crystal structure consisting of hexagonal lattices. This special structure endows graphene materials with unique optical, electrical, thermal and mechanical properties. These superior properties make it show great application potential in nanoelectronic devices, lithium ion battery electrode materials, supercapacitors, solar battery...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/186
Inventor 魏合林朱大明刘宇昊
Owner HUAZHONG UNIV OF SCI & TECH
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