61results about How to "Short stripping time" patented technology

The invention provides a method for preparing graphene through a large-scale aqueous phase. According to the method, graphite serves as a raw material. The method comprises the following steps: intercalating the graphite by adopting an intercalator, so that interlayer spacing between graphene sheet layers is enlarged, and the interaction force between the layers is weakened; and directly treating the intercalated graphite through ultrasonic waves, stripping and uniformly dispersing the graphite in an alkaline aqueous solution with the pH value of 10-14, wherein the content of graphene in the dispersion can be over 100mg / mL (about 10 weight percent of graphene), the content of single-layer graphene in the aqueous phase dispersion is more than 90 percent, the equivalent diameter of the graphene sheet layers can be over 1-10 microns, and a graphene film formed by filtering has a complete lattice structure and high electric conductivity. The prepared high-concentration aqueous phase graphene paste can be stored for a long time and is convenient to transport and use. The method is simple in process flow, high in production efficiency, low in energy consumption and low in cost, a commercially available low-cost reagent is adopted, the reagent is easy to recover, and the production process is environment-friendly and pollution-free.

The invention provides a method for producing a wafer. The purpose of the present invention is to shorten the peeling time when a wafer is generated from the peeling of a SiC ingot. The wafer production method includes a wafer production step in which ultrasonic water is sprayed onto an end surface of an ingot on which a peeling layer is formed to peel the wafer from the ingot, thereby producing the wafer. Therefore, compared with a structure of simultaneously transmitting ultrasonic vibration to the whole end face of the ingot to strip the wafer, the stripping time can be shortened, and the ultrasonic water spraying nozzle and the ultrasonic vibration plate of the ultrasonic water spraying nozzle can be miniaturized. As a result, it is possible to achieve efficiency and cost reduction related to wafer peeling.

The invention discloses a method for centrifugally extracting and recovering titanium from titanium white waste sulfuric acid. The method comprises the following steps: 1) primary amine centrifugally extracts titanium in waste sulfuric acid, and performs centrifugal extraction reaction with waste sulfuric acid produced by sulfuric acid method to produce titanium dioxide; 2) dilute sulfuric acid single-stage washes the titanium-rich organic phase, and 1) The extracted titanium-rich organic phase is single-stage washed in a container with stirring equipment, the washing liquid is dilute sulfuric acid with a mass concentration of 5-10%, and the phases are separated after single-stage washing; 3) The titanium-rich organic phase is centrifugally stripped , mixing the washed titanium-rich organic phase obtained in step 2) with lye with a concentration of 0.5-1 mol / L, and performing centrifugal stripping, and stripping the titanium-rich organic phase to obtain a titanium-containing solution and a blank organic phase. The method of the present invention does not need a synergistic extraction agent, and the cost is low, and the single-stage washing process of the titanium-rich organic phase is added, which can reduce the iron content in the titanium-rich organic phase, and the titanium-rich organic phase is centrifugally stripped with lye, The stripping time is short and the stripping rate is high.