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Gallium-nitride-based maser epitaxial structure and growth method thereof

An epitaxial structure, GaN-based technology, used in lasers, laser parts, semiconductor lasers, etc., can solve problems such as electron leakage

Inactive Publication Date: 2016-12-07
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Abstract
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  • Application Information

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Problems solved by technology

[0008] The present invention aims at the problem of electron accumulation caused by the compositional mutation between the final barrier layer and the pAlGaN electron blocking layer in the existing GaN-based laser (LD) growth technology, and provides a method that can improve and solve the problems of electron accumulation and electron leakage, and improve Refractive index of pAlGaN layer, GaN-based laser epitaxial structure to reduce light loss inside the laser

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  • Gallium-nitride-based maser epitaxial structure and growth method thereof

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Embodiment Construction

[0034] like figure 1 As shown, the gallium nitride-based laser epitaxial structure of the present invention includes a substrate 1, a nucleation layer 2, a high-temperature GaN layer 3, an n-type GaN / AlGaN superlattice optical confinement layer 4, and an n-type waveguide layer from bottom to top 5. Emitting layer 6. pAl x Ga 1-x N / pIn y Ga 1- y N superlattice electron blocking layer 7 , P-type GaN layer waveguide layer 8 , P-type GaN / AlGaN superlattice light confinement layer 9 and surface ohmic contact layer 10 . The substrate 1 is a C-plane sapphire substrate, a SiC substrate or a GaN substrate. The n-type waveguide layer 5 is a GaN or InGaN layer, where the In composition is 0-0.5, doped or not doped with Si, and the doping concentration is 0-1E+19cm -3 Si. The light-emitting layer is 1-10 periods of In a Ga 1-a N / In b Ga 1-b N, where the quantum well layer In a Ga 1-a N layer thickness 1-15nm, a is 0.1-0.2; quantum well barrier layer In b Ga 1-b N thickness ...

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Abstract

The invention discloses a gallium-nitride-based maser epitaxial structure and a growth method thereof. The gallium-nitride-based maser epitaxial structure sequentially comprises a substrate, a nucleating layer, a high-temperature GaN layer, a n-type GaN / AlGaN superlattice optical limiting layer, a n-type waveguide layer, a luminous layer, a pAlxGa1-xN / pInyGa1-yN superlattice electron blocking layer, a P-type GaN waveguide layer, a P-type GaN / AlGaN superlattice optical limiting layer and a surface ohmic contact layer from bottom to top. The growth method includes the steps that all the layers sequentially grow on the substrate, the growth pressure of the pAlxGa1-xN / pInyGa1-yN superlattice electron blocking layer is 80 torr to 260 torr, and the growth temperature of the pAlxGa1-xN / pInyGa1-yN superlattice electron blocking layer is 800 DEG C to 1,000 DEG C. According to the gallium-nitride-based maser epitaxial structure and the growth method thereof, a pAlGaN / pInGaN superlattice electron blocking layer is adopted, the pressure stress led by growth of a pAlGaN layer is relieved through the tensile stress led by growth of a pInGaN layer, growth of the pAlGaN layer is facilitated, energy band structure change caused by the pAlGaN layer can also be improved, electron accumulation is improved, the electron leakage problem is solved accordingly, and the refractive index of the pAlGaN layer can be increased.

Description

technical field [0001] The invention relates to an epitaxial structure and a growth method of a gallium nitride-based laser, which are used to improve and solve the problems of electron accumulation and electron leakage in gallium nitride-based laser products, and at the same time reduce the laser in the n-type confinement layer and p-type confinement layer. The invention relates to the light loss inside the laser during refraction between layers, and the function of improving the performance of laser (LD) products, belonging to the technical field of laser (LD) preparation. Background technique [0002] Wide bandgap semiconductors are the third-generation semiconductor materials after silicon and gallium arsenide. In recent years, people have paid more and more attention to them. At present, extensive research mainly includes III-V and II-VI compound semiconductor materials, silicon carbide (SiC) and diamond thin films, etc., have been widely used in blue-green, ultraviolet...

Claims

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Application Information

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IPC IPC(8): H01S5/343
CPCH01S5/34333H01S5/34346
Inventor 马旺王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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