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Light emitting diode epitaxial wafer and manufacture method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the luminous efficiency of LEDs, lattice defects, etc., so as to improve the luminous efficiency of LEDs, reduce the density of line dislocations, and improve the growth quality. Effect

Active Publication Date: 2014-10-08
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem in the prior art that the epitaxial substrate material causes lattice defects, thereby affecting the luminous efficiency of the LED, an embodiment of the present invention provides a light-emitting diode epitaxial wafer and a manufacturing method thereof

Method used

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  • Light emitting diode epitaxial wafer and manufacture method thereof
  • Light emitting diode epitaxial wafer and manufacture method thereof
  • Light emitting diode epitaxial wafer and manufacture method thereof

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Embodiment 1

[0035] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 1 , the epitaxial wafer includes a substrate 01, a buffer layer 02, an N-type layer 03, a light-emitting layer 04, and a P-type layer 05 sequentially covering the substrate 01. The epitaxial wafer also includes a three-dimensional recrystallization layer 06, and a three-dimensional recrystallization layer 06 It grows between the buffer layer 02 and the N-type layer 03, and the three-dimensional recrystallization layer 06 is a GaN layer formed by segmented three-dimensional growth, and the growth pressure of each segment of the three-dimensional recrystallization layer is different.

[0036] Specifically, the substrate 01 can be Al with crystal orientation [0001] 2 o 3 Sapphire as the substrate.

[0037] Specifically, the buffer layer 02 is a GaN buffer layer with a thickness between 15 and 40 nm.

[0038] Specifically, the three-dimensional recrystallization layer 06 is...

Embodiment 2

[0050] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 2 , the structure of the epitaxial wafer is similar to that of the embodiment, including a substrate 01, a buffer layer 02 covering the substrate 01, an N-type layer 03, a light-emitting layer 04, and a P-type layer 05, and the epitaxial wafer also includes a three-dimensional recrystallization layer 06 , the three-dimensional recrystallized layer 06 is grown between the buffer layer 02 and the N-type layer 03 .

[0051] The difference from the first embodiment is that the growth temperature of the three-dimensional recrystallized layer 06 is also limited in this embodiment. which is

[0052] In an implementation of the embodiment of the present invention, the three-dimensional recrystallization layer 06 includes: a first recrystallization sublayer 61 and a second recrystallization sublayer 62 grown at the same temperature but under different pressures, the first recryst...

Embodiment 3

[0062] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, which is applicable to the epitaxial wafer in Embodiment 1, see image 3 , the method includes:

[0063] Step 301: providing a substrate and growing a buffer layer on the substrate.

[0064] Specifically, the substrate is Al with a crystal orientation of [0001] 2 o 3 Sapphire is used as the substrate, and it is annealed in a hydrogen atmosphere for 1-10 minutes to clean the surface of the substrate, and then nitriding is performed at a temperature between 1000°C and 1200°C to form a thin layer of free state on the surface of the substrate Nitrogen is more favorable for buffer layer nucleation.

[0065] Specifically, the buffer layer is a GaN buffer layer with a thickness between 15 nm and 40 nm, a growth temperature between 400° C. and 600° C., and a growth pressure between 400 Torr and 600 Torr.

[0066] Step 302 : growing a three-dimensional recrystal...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacture method thereof, and belongs to the field of a light emitting diode. The epitaxial wafer comprises a substrate, and a buffer layer, an N-type layer, a luminescent layer and a P-type layer which successively cover the substrate. The epitaxial wafer further comprises a three-dimensional recrystallization layer. The three-dimensional recrystallization layer grows between the buffer layer and the N-type layer and is a GaN layer generated by use of a sectionalized three-dimensional growth mode, wherein the growth pressure of the segments of the three-dimensional recrystallization layer are different. According to the invention, the three-dimensional recrystallization layer is grown between the buffer layer and the N-type layer, polycrystalline recrystallizations generated by the buffer layer are GaN monocrystallines, these monocrystallines become bigger and bigger gradually to form a nucleus island, and a sectionalized growth mode is employed, the bottom-layer wire dislocation density is effecitvley reduced, the bottom-layer growth quality of GaN epitaxy growth is improved, a quite good bottom-layer condition is provided for the growth of a subsequent quantum well layer, radiative recombination of cavities and electrons is facilitated, and the LED luminescence efficiency is improved.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Semiconductor light emitting diode (Light Emitting Diode, referred to as "LED") has the advantages of small size, high efficiency and energy saving, low light decay, long service life, high color purity, wide color gamut and durability, especially in large outdoor display screens, background light sources and other fields are widely used. [0003] Light-emitting diodes are mainly composed of brackets, silver glue, chips, gold wires, and epoxy resin. Among them, the chip is the core component of the light-emitting diode, which is processed by epitaxial wafers through multiple processes. Therefore, the structure of the epitaxial wafer determines the quality of the LED. The epitaxial wafer is mainly composed of a substrate, a buffer layer, a P (Positive, positively charged...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/16H01L33/00
CPCH01L33/007H01L33/16
Inventor 陶章峰乔楠胡加辉韩杰魏世祯
Owner HC SEMITEK SUZHOU
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