GaN-based LED epitaxy structure and preparation method thereof

Abstract

The invention provides a GaN-based LED epitaxy structure and a preparation method thereof. The method comprises the following steps: providing a growth substrate, and growing a nucleating layer on the growth substrate; growing an undoped GaN layer on the nucleating layer under a condition of linear-gradient growth pressure or a condition of the growth pressure with linear gradient and pressure maintaining being combined; growing an N-type GaN layer on the undoped GaN layer; growing an InGaN / GaN superlattice quantum well structure on the N-type GaN layer; growing an InGaN / GaN multi-quantum-well luminescent layer structure on the InGaN / GaN superlattice quantum well structure; growing an AlGaN layer, a low-temperature P-type layer and a P-type electron blocking layer on the InGaN / GaN multi-quantum-well luminescent layer structure in sequence; and growing a P-type GaN layer on the P-type electron blocking layer. Warpage degree of the epitaxy structure in the growing process can be changed by adjusting the growth pressure conditions; and the method is large in amplitude in adjusting the warpage degree, so that it is convenient to find an appropriate warpage degree to enable the epitaxy structure to be well matched with a carrier disc when growing the multi-quantum-well luminescent layer structure, and wavelength uniformity of the single epitaxy structure is effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor luminescence, and in particular relates to a GaN-based LED epitaxial structure and a preparation method thereof. Background technique [0002] The application range of GaN-based LEDs is getting wider and wider, and the requirements for the LED epitaxy process in the production and preparation process are getting higher and higher. Among them, the wavelength uniformity of the epitaxial structure monolithic is a very important aspect. The wavelength uniformity of the epitaxial structure is closely related to the uniformity of the surface temperature of the epitaxial structure when it grows multiple quantum wells, and the surface temperature of the epitaxial structure is related to the contact degree of the carrier plate. Because the epitaxial layer GaN and the growth substrate sapphire lattice constant and thermal expansion The different coefficients lead to different degrees of warpage in the epitaxial...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a GaN-based LED epitaxial structure and its preparation method, which is used to solve the problem of the PSS growth substrate in the prior art due to the trend of large bottom width and high depth. , the warping of the epitaxial structure is getting bigger and bigger, and the effect of adjusting the matching between multi-quantum wells and the carrier plate through the buffer layer is becoming more and more limited, and the design of the carrier plate takes a long time, and the process level is also limited.

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