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Method for directly and conformally covering graphene film on full surface of substrate with three-dimensional structure

A graphene film and three-dimensional structure technology, applied in the field of materials, can solve the problems of high production cost, long production cycle, surface adsorption pollution, etc., and achieve the effects of simple operation, short production cycle and low production cost

Active Publication Date: 2014-09-03
重庆石墨烯研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned graphene transfer process is not only complicated in operation, long in production cycle, and high in production cost, but also may cause metal residue and surface adsorption pollution. More importantly, it is difficult to conformally cover the entire surface of a three-dimensional structure with a graphene film.

Method used

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  • Method for directly and conformally covering graphene film on full surface of substrate with three-dimensional structure
  • Method for directly and conformally covering graphene film on full surface of substrate with three-dimensional structure
  • Method for directly and conformally covering graphene film on full surface of substrate with three-dimensional structure

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Experimental program
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Effect test

Embodiment 1

[0024] A method for conformally covering the entire surface of a graphene film directly on a three-dimensional structure substrate, comprising the following steps:

[0025] A. will have a three-dimensional surface structure (such as figure 1 The silicon wafers with the spherical structure shown in ) were ultrasonically cleaned in acetone, 95vol% ethanol, and pure water for 2 minutes respectively, and dried with nitrogen;

[0026] B. putting the silicon chip after step A drying is in the tube type CVD system vacuum chamber of 50mm (such as figure 2 shown), seal the vacuum chamber; pump the sealed vacuum chamber to 1Pa with a vacuum pump, fill the vacuum chamber with argon gas to 1atm, and then pump it to 1Pa with a vacuum pump, and repeat the operation three times to make the air in the vacuum chamber exhausted, and then fill the vacuum chamber with hydrogen, maintaining the air pressure at 5×10 3 Pa;

[0027] C. Raise the temperature of the vacuum chamber filled with hydro...

Embodiment 2

[0030] A method for conformally covering the entire surface of a graphene film directly on a three-dimensional structure substrate, comprising the following steps:

[0031] A. A copper sheet with a periodic surface structure (such as image 3 The substrate with the three-dimensional structure shown in ) was placed in acetone, 95vol% ethanol, and pure water for 2 minutes, and then dried with nitrogen;

[0032] B. the copper sheet after step A drying is put pipe diameter in the tube type CVD system vacuum chamber of 50mm (as figure 2 shown), seal the vacuum chamber; pump the sealed vacuum chamber to 1Pa with a vacuum pump, fill the vacuum chamber with argon gas to 1atm, and then pump it to 1Pa with a vacuum pump, and repeat the operation three times to make the air in the vacuum chamber exhausted, and then fill the vacuum chamber with hydrogen, maintaining the air pressure at 1×10 3 Pa;

[0033] C. Raise the temperature of the vacuum chamber filled with hydrogen in step B to...

Embodiment 3

[0036] A method for conformally covering the entire surface of a graphene film directly on a three-dimensional structure substrate, comprising the following steps:

[0037] A. will have a three-dimensional surface structure (such as figure 1The microporous structure shown in ) germanium slices were placed in acetone, 95vol% ethanol, and pure water for 2 minutes, and then dried with nitrogen;

[0038] B. the germanium sheet after the drying of step A is put in the tube type CVD system vacuum chamber of 50mm (such as figure 2 shown), seal the vacuum chamber; pump the sealed vacuum chamber to 2Pa with a vacuum pump, fill the vacuum chamber with argon to 1 atm, and then pump it to 2Pa with a vacuum pump, and repeat the operation three times to make the air in the vacuum chamber Exhaust, then fill the vacuum cavity with hydrogen, and maintain the air pressure at 150Pa;

[0039] C. The temperature of the vacuum chamber filled with hydrogen in step B is raised to 780° C., 10 sccm ...

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Abstract

The invention discloses a method for directly and conformally covering a graphene film on the full surface of a substrate with a three-dimensional structure. The method comprises the steps of placing a cleaned and dried substrate with a three-dimensional structure in a vacuum cavity of a chemical vapor deposition device, and exhausting air in the cavity; then, filling protective gas into the cavity; next, heating the cavity to the graphene growth temperature; introducing carbon source gas and protective gas taking a current-carrying effect, maintaining the air pressure at the graphene growth pressure, and enabling graphene to directly grow on the surface of the substrate with the three-dimensional structure; after the growth of graphene is ended, stopping introducing the carbon source gas into the cavity, cooling the cavity to 10-30 DEG C in the existence of the protective gas and at the graphene growth pressure, and taking out the substrate with the three-dimensional structure to obtain the substrate with the continuous and uniform graphene film covered on the full surface. The method disclosed by the invention is simple and convenient in operation, short in manufacturing period, low in manufacturing cost and capable of directly covering the continuous and uniform high-quality graphene film on the full surface of the substrate with the complex three-dimensional structure.

Description

technical field [0001] The invention belongs to the technical field of materials and relates to a method for covering graphene on the surface of a three-dimensional structure. Background technique [0002] Graphene is a two-dimensional crystal with a hexagonal honeycomb lattice composed of a single layer of carbon atoms based on sp2 hybridization. Due to the low-dimensional quantum properties of graphene and the large π bonds formed by the unique sp2 hybridization, its free electron gas behaves as a two-dimensional massless Dirac fermion gas, thus exhibiting many excellent properties. Graphene has good light transmission, and the optical absorption from visible light to far infrared is only 2.3%. Electron mobility in graphene up to 15,000 cm 2 V -1 the s -1 , so graphene can maintain high conductivity (resistivity is only 10 -6 ohm-cm). At the same time, graphene materials also have high thermal conductivity and super strong mechanical properties. These excellent chara...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/44
Inventor 魏大鹏杨俊朱鹏余崇圣张永娜姜浩黄德萍李占成史浩飞杜春雷
Owner 重庆石墨烯研究院有限公司
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