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SiC substrate-based graphene CVD (Chemical Vapor Deposition) direct epitaxial growth method and manufactured device

An epitaxial growth, graphene technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as damage, affect the performance of graphene materials and devices, and cannot be directly applied, and achieve the effect of avoiding damage.

Inactive Publication Date: 2013-01-23
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conductivity of the metal substrate under the native graphene prepared by CVD epitaxy makes it impossible to be directly applied, and the substrate transfer technology must be relied on to remove the metal substrate and then transfer it to a suitable substrate, and it is inevitable in the transfer process Earth will pollute and damage graphene films, affecting the performance of graphene materials and devices

Method used

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  • SiC substrate-based graphene CVD (Chemical Vapor Deposition) direct epitaxial growth method and manufactured device
  • SiC substrate-based graphene CVD (Chemical Vapor Deposition) direct epitaxial growth method and manufactured device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1 A graphene film is prepared on a silicon carbide substrate.

[0021] (1) Put the SiC substrate into acetone, ethanol and deionized water successively for cleaning, each time for 10 minutes, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0022] (2) Put the SiC substrate into the chemical vapor deposition CVD reaction chamber, and draw a vacuum to 10 -5 Torr, to remove the residual gas in the reaction chamber;

[0023] (3) Pass high-purity Ar into the reaction chamber, keep the temperature at 150°C for 10 minutes, and then evacuate to 10 -5 Torr, discharge the adsorbed gas on the substrate surface.

[0024] (4) Introduce H into the reaction chamber 2 Perform substrate surface pretreatment, gas flow rate 1sccm, reaction chamber vacuum 0.1Torr, substrate temperature 1000°C, processing time 1min;

[0025] (5) Pass H into the reaction chamber 2 and CH 4 , keep H 2 and CH 4 The flow ratio is 10:1, H 2 Flow...

Embodiment 2

[0028] Example 2 A graphene film is prepared on a silicon carbide substrate.

[0029] (1) Put the SiC substrate into acetone, ethanol and deionized water successively for 8 minutes each time, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0030] (2) Put the SiC substrate into the chemical vapor deposition CVD reaction chamber, and draw a vacuum to 10 -6 Torr, to remove the residual gas in the reaction chamber;

[0031] (3) Pass high-purity Ar into the reaction chamber, keep the temperature at 250°C for 30 minutes, and then evacuate to 10 -6 Torr, discharge the adsorbed gas on the substrate surface.

[0032] (4) Introduce H into the reaction chamber 2 Perform substrate surface pretreatment, gas flow rate 20sccm, reaction chamber vacuum degree 1Torr, substrate temperature 1100°C, processing time 10min;

[0033] (5) Pass H into the reaction chamber 2 and CH 4 , keep H 2 and CH 4 The flow ratio is 2:1, H 2 Flow 200sccm,...

Embodiment 3

[0036] Example 3 A graphene film is prepared on a silicon carbide substrate.

[0037] (1) Put the SiC substrate into acetone, ethanol and deionized water successively for cleaning, each time for 5 minutes, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0038] (2) Put the SiC substrate into the chemical vapor deposition CVD reaction chamber, and draw a vacuum to 10 -6 Torr, to remove the residual gas in the reaction chamber;

[0039] (3) Pass high-purity Ar into the reaction chamber, keep the temperature at 100°C for 20 minutes, and then evacuate to 10 -6 Torr, discharge the adsorbed gas on the substrate surface.

[0040] (4) Introduce H into the reaction chamber 2 Perform substrate surface pretreatment, gas flow rate 10sccm, reaction chamber vacuum 0.5Torr, substrate temperature 1200°C, processing time 50min;

[0041] (5) Pass H into the reaction chamber 2 and CH 4 , keep H 2 and CH 4 The flow ratio is 5:1, H 2 Flow...

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PUM

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Abstract

The invention discloses a SiC substrate-based graphene CVD (Chemical Vapor Deposition) direct epitaxial growth method. By using a semiconductor SiC as a substrate and reasonably preprocessing the SiC substrate, the growth pressure, the flow and the temperature are regulated, graphene directly grows on the SiC substrate without using metal as a catalyst, the growing graphene does not need to be transferred and can be directly used for manufacturing various kinds of devices, so that electrical properties and the reliability of the devices are improved, and the complexity of device manufacture is lowered. According to the SiC substrate-based graphene CVD direct epitaxial growth method, a large-area graphene material with semiconductor cleanness can grow, the growth preparation of the large-area graphene material without transfer can be used, and a material is provided for the manufacture of a silicon carbide-graphene device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and device manufacturing, and relates to a growth method of semiconductor materials, in particular to a graphene CVD epitaxial growth method of a semiconductor silicon carbide substrate, which can be used for the growth and preparation of large-area graphene materials without transfer, and Provide materials for the fabrication of silicon carbide-graphene devices. Background technique [0002] Graphene is a two-dimensional crystal composed of carbon atoms. It is the lightest and thinnest material known so far. It has very peculiar physical and chemical properties and has outstanding industrial advantages. Material. [0003] Transition metal-catalyzed chemical vapor deposition (CVD) epitaxy is a method widely used in the world to prepare large-area graphene. It is not limited by the size of the substrate, the equipment is simple, and it can be mass-produced. However, the conductivi...

Claims

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Application Information

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IPC IPC(8): H01L21/04
Inventor 王东宁静韩砀闫景东柴正张进成郝跃
Owner XIDIAN UNIV
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