213 results about "Gold layer" patented technology

The invention provides a micro-nano optical fiber probe for biochemical component detection based on infrared spectroscopy and detection equipment, and a preparation method of the micro-nano optical fiber probe comprises the following steps: S1, selecting one section of a multimode quartz optical fiber as a sensing area, and then removing a cladding layer and a coating layer of the sensing area to expose a bare fiber; s2, dripping a mixed acid solution prepared from hydrofluoric acid and citric acid to the bare fiber to corrode the bare fiber, and then cleaning and blow-drying; immersing the treated multimode quartz optical fiber into a silane coupling agent solution, reacting for 0.5-1 hour, and then drying; s3, immersing the multimode quartz optical fiber treated in the step S2 into a solution containing silver nanoparticles, and reacting for 10-20 minutes to obtain an optical fiber modified by the silver nanoparticles; and S4, sputtering a gold layer on the surface of the silver-modified optical fiber by adopting a vacuum magnetron sputtering technology to obtain the micro-nano optical fiber probe with the silver-gold film layer. After the surface of the silver nanostructure is covered with the gold film, oxygen, water, corrosive molecules and the like are effectively prevented from making direct contact with silver. In addition, both the gold and the silver can support a surface plasmon resonance (SPR) effect, and particularly, the prepared detection equipment can ensure the sensitivity of the SPR.

Aiming at the limitation of the existing metal bump corrosion prevention technology, the invention provides an innovative process: pure silver electroplating is adopted to form a bump main body, a complete gold wrapping structure is formed on all exposed surfaces of the bump main body through secondary electroplating of pure gold, and the process can be used for accurately regulating and controlling the parameters of the secondary electroplating and the size of a secondary photoetching pattern. The exposed surface of the silver bump is uniformly wrapped by the thin gold layer, so that the problem that metal interconnection is easy to corrode in a severe environment in the traditional technology is effectively solved, and comprehensive breakthrough in corrosion resistance, electrical properties and cost effectiveness is realized through innovative silver core and gold shell layered structure design and precise process control.

The invention belongs to the technical field of sensors, and particularly relates to a TSV-based MEMS capacitive accelerometer wafer-level packaging structure and packaging method. A gold-silicon bonding and TSV (Through Silicon Via) combined technology is adopted, and a gold layer is used as a bonding medium and a sensor capacitor polar plate, so that the problem of integration of a polar plate structure and signal lead-out in an MEMS sensor is solved, the design that an independent electrode layer or an additional polar plate is needed in traditional packaging is avoided, and the packaging complexity is reduced. Meanwhile, the gold layer has low resistance and good conductivity, compared with a traditional electrode material, signals can be better transmitted, and the electrical performance of the MEMS sensor is improved. After the TSV technology is combined, short-path signal extraction can be realized in the wafer, signal attenuation and interference are reduced, and signal integrity and precision are improved.

The invention discloses an interconnection method of isolated electrodes. The method comprises the following steps of: primarily filling an isolation trench of a chip with an electric isolation structure by using benzocyclobutene resin; first coating of metal stripping glue and photoresist is carried out on the wafer surface of the chip and in the isolation trench after preliminary filling; opening a to-be-thickened electrode window on the surface of the chip, and covering a first metal layer on the surface of the whole wafer through first thin gold sputtering; coating the metal stripping glue and the photoresist for the second time; opening a to-be-thickened electrode window on the surface of the chip through a photoetching technology, and covering a second metal layer on the surface of the wafer through secondary thin gold sputtering; electroplating the wafer integrally covered with the second metal layer; the electroplated chip is placed in an organic solvent for gold layer stripping, and metal layers formed after sputtering and electroplating of other functional areas are removed. The technical problem that an electric isolation structure cannot be spanned by an electroplating process is solved, and the reliability and the conductivity of electrode connection can be effectively ensured.

The invention relates to a striker type micro-nano robot for cell membrane breakthrough and a preparation process of the striker type micro-nano robot, in particular to a striker type micro-nano robot driving control method based on a photomagnetic coupling field and a rotary blasting type cell membrane breakthrough method. The invention discloses a striker type micro-nano robot for cell membrane breakthrough. The striker type micro-nano robot consists of a magnetic iron oxide core and a silicon dioxide needle handle, wherein the surface of one side of the magnetic iron oxide core is coated with a gold layer. The invention discloses a preparation process of a firing pin type micro-nano robot. The preparation process of the firing pin type micro-nano robot comprises the steps of sol-gel core preparation, magnetron sputtering and chemical precipitation needle handle preparation. Under the cooperative driving of an external magnetic field and a near-infrared light field, rotary blasting type breakthrough can be performed on a mononuclear membrane through the tip end of the needle handle.

The invention provides a one-dimensional nano material with wave-absorbing performance as well as a preparation method and application of the one-dimensional nano material. The preparation method comprises the following steps: (1) sequentially carrying out heavy ion beam irradiation, ultraviolet light sensitization and chemical etching on a high polymer material template to obtain an etched template; (2) spraying metal on one side of the etching template to form a gold layer; and (3) electrochemical deposition is conducted on the side, not sprayed with metal, of the etching template obtained in the step (2), deposition liquid adopted in the electrochemical deposition is an aqueous solution containing TiF4 and CoCl2, and therefore the Co / TiO2 composite nanowire is generated. Through the preparation method, the Co / TiO2 composite wave-absorbing material which is arranged in parallel, high in impedance matching capability and excellent in microwave absorption performance can be obtained.

The present invention discloses an ultra-wideband, multi-frequency switchable terahertz absorber based on vanadium dioxide, belonging to the field of terahertz wave technology. The absorber comprises: an ultra-wideband, multi-frequency switchable terahertz absorber unit having a multi-layer structure, wherein, from top to bottom, a mutually bonded upper patterned VO2 layer, an upper SiO2 dielectric layer, a lower VO2 layer, an intermediate patterned gold layer, a lower SiO2 dielectric layer, and a bottom gold layer are sequentially arranged; the upper patterned VO2 layer is disc-shaped, with a square annular slit disposed within the disc; the intermediate patterned gold layer comprises an inner ring, an outer ring, and an open square ring, spaced from the inside out, with the opening of the open square ring disposed in the middle of each edge. The present invention is based on an ultra-wideband, multi-frequency switchable terahertz absorber based on vanadium dioxide. The designed absorber can achieve switching from ultra-wideband absorption to multi-frequency absorption by adjusting the conductivity of the vanadium dioxide through temperature control.

A base layer (3) and a gold layer (4) are sequentially formed on a semiconductor substrate (1). A resist pattern (5) is formed on the gold layer (4). A plating film (6) is formed on portions of the gold layer (4), which are not covered with the resist pattern (5). Portions of the gold layer (4), which are exposed by removing the resist pattern (5), and the base layer (3) are etched by ion milling so as to form a metal mask (8). The semiconductor substrate (1) is plasma-etched using the metal mask (8) so as to form a via (9). The base layer (3) is composed of at least one metal layer that is formed of any one metal selected from among Ti, Ta, W, Ni, Co, and Nb or an alloy of two or more of those metals. The film thickness of the gold layer (4) is 20 nm or less, and the film thickness of the base layer (3) is 100 nm or more.

The invention relates to the technical field of medical instruments for treating aneurysm, and particularly discloses a vascular spring ring and a coating preparation process thereof. The preparation process of the coating of the vascular spring ring comprises the following steps: S1, taking a tungsten filament, and cleaning the tungsten filament; and S2, the tungsten filament is etched through ion plating. And S3, the surface of the tungsten filament is cleaned through titanium ions, a titanium layer is deposited on the surface of the tungsten filament, and the thickness of the titanium layer is 0.015-0.025 microns. And S4, a gold layer is deposited on the surface of the titanium layer, the thickness of the gold layer is 0.15-0.25 [mu] m, and the raw material wire is obtained. And S5, the raw material wire is manufactured and formed, and the vascular spring ring is obtained. In the process, the tungsten filament is etched through ion plating, so that the surface roughness is improved, and the adhesive force of a subsequent coating is enhanced. And titanium ion cleaning is carried out, and ion plating etching residues are removed. And the thin titanium layer enhances the adhesive force of the pure gold layer. Due to the outermost gold layer, the vascular spring ring has good biocompatibility and corrosion resistance.

The invention provides a glass nanopore probe based on an aptamer and application of the glass nanopore probe in dopamine detection, and belongs to the technical field of electrochemical sensing and scanning probe microscopy. The sensor comprises: a glass nanopore probe, the inner wall of which is modified with a gold layer; a cDNA (complementary deoxyribonucleic acid) single chain is fixed on the gold layer through a gold-sulfur bond; a part of the sequence of the dopamine aptamer is hybridized and combined with the cDNA single chain; wherein the combination of the dopamine and the dopamine aptamer causes the change of an ion current rectification signal of the glass nanopore probe, so that the detection of the dopamine is realized based on the change of the ion current rectification signal of the glass nanopore probe. The invention provides a valuable scheme for developing an aptamer nanopore scanning electrochemical sensor for single cell analysis and researching neurotransmitter-related diseases.

The present invention discloses a preparation method of a radio frequency thin film capacitor, relating to the technical field of capacitors. The method includes: preparing a layer of photoresist on a substrate, and sequentially performing exposure and development operations on the photoresist to obtain a first mask structure; sputtering a layer of gold layer on the first mask structure to obtain a bottom electrode mask structure; depositing a layer of thin film dielectric layer on the bottom electrode mask structure to obtain a dielectric layer mask structure; sputtering a layer of gold layer on the dielectric layer mask structure to obtain a top electrode mask structure; preparing a layer of photoresist on the top electrode mask structure, and sequentially performing exposure and development operations on the photoresist prepared on the top electrode mask structure to obtain a second mask structure; sequentially performing etching, scribing and photoresist removal operations on the second mask structure to obtain a radio frequency thin film capacitor. The present invention can minimize the insertion loss introduced due to the sample size and improve the operating frequency of the capacitor.

This provides an improvement to the rewiring line structure of die packaging. [Solution] This invention provides an improvement to the redistribution line structure of die packaging, which mainly consists of one die, multiple redistribution lines, and multiple nickel-gold layers. Each redistribution line is formed on the surface of the die by being stretched horizontally using a redistribution layer (RDL) process. Each nickel-gold layer is formed on the surface of each redistribution line by being plated using a chemical nickel-gold (ENIG) process. Each nickel-gold layer consists of a nickel (Ni) layer and a gold (Au) layer, with the gold layer positioned on top of the nickel layer. This structure effectively solves the problems of uneven thickness and process complexity that occur in conventional die packaging when nickel-gold layers are formed using an electroplating process, and the RDL process can improve the design space and reliability of the die packaging.

The invention discloses a chemical gold plating anti-corrosion process for a gold-silver alloy or pure silver bump. The chemical gold plating anti-corrosion process comprises the following steps: forming a metal bump structure on the surface of a substrate; performing patterning processing on the metal bump structure to form a metal bump with a required pattern; carrying out pretreatment on the metal bump, wherein the pretreatment comprises acid washing and deionized water rinsing; immersing the pretreated metal bump into a chemical gold plating solution to form a continuous metal gold layer on the surface of the metal bump; and rinsing and drying the gold-plated structure to obtain the metal bump structure with the anti-corrosion performance.

The invention belongs to the technical field of preparation of SERS (Surface Enhanced Raman Scattering) substrates, and particularly relates to a preparation method of a tubular SERS substrate with a structured inner wall, which comprises the following steps: processing a plurality of upper through grooves side by side in a flat single crystal copper surface to form an upper substrate sheet; a plurality of lower through grooves completely matched with the upper through grooves in outline are symmetrically machined in the other flat single crystal copper surface, and a lower substrate sheet is formed; the surfaces, with the through grooves, of the upper substrate sheet and the lower substrate sheet are cleaned; spraying gold layers on the cleaned surfaces, with the through grooves, of the upper substrate sheet and the lower substrate sheet by using a multi-layer cold spraying method, and then performing polishing treatment by using a mechanical grinding process; and the upper substrate sheet and the lower substrate sheet are aligned and buckled, so that the upper through groove and the lower through groove are accurately butted, a micro-pipeline structure is formed, and the tubular SERS substrate structure is obtained. The detection laser utilization rate can be improved, and then the detection sensitivity and the detection signal intensity amplification factor are improved.

The invention provides a relief embroidery gold painting and a processing method. The processing method comprises the following steps: coating a gold layer on a stamped substrate; coating and curing a photo-curing adhesive layer on the gold layer, and forming a first micropore with the diameter of 50-200 nanometers in the gold layer through laser penetrating through the photo-curing adhesive layer; the substrate with the first micropores formed in the photocuring adhesive layer and the gold layer is placed in an electrolyte solution to be electrolyzed, so that an oxidation reaction is generated on the inner wall of each first micropore to generate a gold trioxide layer; and the substrate in the electrolyte solution is taken out, and organic pigment is sprayed to the outer surface of the photocuring adhesive layer, so that the organic pigment permeates into the first micropores and is subjected to a bonding reaction with the gold trioxide layer on the inner walls of the first micropores, and the organic pigment is adsorbed on the inner walls of the first micropores. According to the invention, only the inner wall of the first micropore is subjected to electrolytic oxidation to form the gold trioxide layer, and the gold trioxide layer and the coated organic pigment layer are subjected to bonding reaction to adsorb the organic pigment layer into the first micropore, so that the adsorption capacity is enhanced.

The invention discloses an anti-corrosion process for chemically plating nickel and gold on a gold-silver alloy or pure silver bump, which is characterized by comprising the following steps of: forming a metal bump structure on the surface of a substrate; performing patterning processing on the metal bump structure to form a metal bump of a target pattern; performing pretreatment on the metal bump, wherein the pretreatment comprises acid pickling, micro-etching, dilute nitric acid cleaning and deionized water rinsing; performing zinc replacement treatment on the pretreated metal bump for at least two times to activate the surface; the activated metal bump is placed in a chemical nickel plating solution for reaction, so that a continuous nickel metal layer is formed on the surface of the metal bump; after the nickel layer is formed, the nickel layer is further placed in a chemical gold plating solution for reaction, and a continuous metal gold layer is formed on the surface of the nickel layer; and rinsing and drying the gold-plated structure to obtain the metal bump structure with the anti-corrosion performance.

The application provides a relief embroidery gold picture and a processing method, which comprises the following steps: coating a gold layer on a substrate after stamping is completed; coating and solidifying a photocuring adhesive layer on the gold layer, and opening a first micropore with a diameter of 50-200 nanometers on the gold layer by laser penetration of the photocuring adhesive layer; placing the substrate with the first micropore opened on the photocuring adhesive layer and the gold layer in an electrolyte solution for electrolysis, so that an oxidation reaction occurs at the inner wall of each first micropore to generate a gold trioxide layer; taking out the substrate in the electrolyte solution, and spraying an organic pigment to the outer surface of the photocuring adhesive layer, so that the organic pigment penetrates into the first micropore and bonds with the gold trioxide layer on the inner wall of the first micropore to be adsorbed on the inner wall of the first micropore. The inner wall of the first micropore is subjected to electrolytic oxidation to form a gold trioxide layer, so that the organic pigment layer is adsorbed in the first micropore by bonding reaction, and the adsorption force is enhanced.

The present invention discloses a low heat leakage thin film composite ribbon line structure and a design method for cryogenic packaging. The low heat leakage thin film composite ribbon line structure for cryogenic packaging of the present invention is composed of a type A lead merged conductive layer, a type A lead conductive layer, a film coating layer, via holes, a type B lead conductive layer, a type B lead merged conductive layer, a bonding wire finger layer, a strengthening layer, a gold layer, and a soldering pad gold plating layer. The present invention systematically expounds the design principles and implementation methods of the low heat leakage thin film composite ribbon line structure, materials, electricity, heat, etc., and obtains a low heat leakage thin film composite ribbon line assembly. The present invention adopts a multi-layer composite structure compatible with the ordinary flexible cable process. On the premise of ensuring performance matching with the detector, low thermal conductivity alloys, multi-layer structure lead merging, and specific surface treatment are used to reduce the heat leakage of the leads and solve the reliability problems brought by high-density leads.

The invention relates to the technical field of materials for integrated circuits, in particular to a lanthanum target material and a preparation method thereof.The method comprises the steps that a micro-lubricating-oil-based cutting fluid is adopted for conducting tooth turning on the welding face of a lanthanum target blank, and then a back gold layer with the thickness of at least 0.5 micrometer is formed on the welding face in a sputtering plating mode; the rotating speed of the gear turning machining is 50-100 r / min, the feeding speed is 0.1-0.5 mm / r, and the cutting depth is 0.1-0.5 mm; the welding face of the back plate is subjected to tooth turning machining, and a back gold layer is plated on the welding face in a sputtering mode; and a middle layer is placed between the lanthanum target blank and the back gold layer of the back plate, vacuum diffusion welding is conducted for 1-4 h, and the lanthanum target material is subjected to aftertreatment. The problem of oxidation of the welding surface of the high-activity lanthanum target can be effectively solved, high-quality welding of the lanthanum target surface and the back plate is achieved, the welding rate and the welding strength of the target material are greatly improved, the surface of the target material is free of ablation marks, and the target material can be stored for a long time and better meets the requirements of a sputter coating process.

A gold-plated silver processing method and gold-plated silver products are disclosed, relating to the field of metal processing technology. The gold-plated silver processing method includes the following steps: S1, silver blank treatment, polishing the silver blank to remove surface impurities; S3, gold plating, applying a gold layer to the treated silver blank; S4, piercing the gold layer using a cone to create multiple vent holes; S5, pressing, applying pressure from one end of the product to the other to expel residual gas within the interlayer through the vent holes; S6, water leveling, heating and water leveling the surface of the gold layer to eliminate piercing marks; S7, wire drawing and bonding, using a wire drawing machine to draw the product to the desired outer diameter to ensure a tight bond between the gold layer and the silver blank. This technical solution has the advantages of eliminating air bubbles within the interlayer, enhancing the adhesion between gold and silver, and improving product quality.

A pressure-sensitive combination switch disclosed by the present invention comprises a pressure-sensitive switch main body composed of a circuit board, a pressure-sensitive sensor and a conductive elastic sheet, the pressure-sensitive sensor and the conductive elastic sheet are respectively arranged on two surfaces of the circuit board and are respectively connected with welding pins of the circuit board, the conductive elastic sheet is arched towards one side, and a gap between the circuit board and the conductive elastic sheet is formed between the circuit board and the conductive elastic sheet. The circuit gold layer comprises a first gold layer and a second gold layer, the first gold layer is located on the outer ring of the second gold layer, isolation is formed between the first gold layer and the second gold layer, the first gold layer makes contact with the edge of the conductive elastic piece, and the second gold layer corresponds to the arched part of the conductive elastic piece. The problems that in the prior art, pressure sensing and switch functions cannot be integrated into one device, so that the structure is complex, the machining difficulty is high, and the failure rate is high are solved.

The utility model discloses a conductive adhesive layer structure of a ceramic core body, the ceramic core body comprises a thin sheet and a thick sheet which are separated by a gap, a gold layer is arranged on one surface, facing the thick sheet, of the thin sheet, a sealing adhesive layer is arranged between the thin sheet and the thick sheet, and the sealing adhesive layer is enclosed outside the gold layer; the thick sheet is provided with a through pin hole, and the hole bottom of the pin hole is opposite to the gold layer. The pin holes are filled with conductive adhesive. From the bottom to the top of the pin hole, the conductive adhesive is divided into a bottom filling adhesive layer and a plurality of height filling adhesive layers which are formed layer by layer; the bottom glue filling layer is formed by flowing and gathering a plurality of glue points, and the glue points in the bottom glue filling layer flow and seep to fill a gap between the gold layer and the thick sheet; the bottom filling glue layer and the height filling glue layer are formed by flowing and gathering sprayed glue points, and the spraying speed of the glue points forming the bottom filling glue layer is larger than that of the glue points forming the height filling glue layer. According to the utility model, the conductive adhesive layer is not easy to break.

The application discloses a preparation method and structure for reducing the capacitance of a laser chip, and the method comprises the following steps: forming a passivated Pad layer on a P surface bonding area of a passivation layer of the chip, wherein the Pad layer is a medium layer with low adhesion to a gold layer; manufacturing a P surface electrode on the chip, and part of the P surface electrode is located on the Pad layer; based on the low adhesion between the passivated Pad layer and the gold layer, when a gold wire is bonded with the P surface electrode, the gold wire pulls up the part of the P surface electrode located on the Pad layer, and the gold wire and the P surface electrode remain connected. By filling a medium layer with low adhesion to the gold layer in the P surface electrode bonding area, the P electrode layer is pulled up when the gold wire is bonded through the bonding process, which is equivalent to greatly reducing the metal area of the P surface electrode, so that the capacitance of the chip electrode is greatly reduced.

The invention discloses a multi-layer composite structure gold-plated inner layer drinking water conveying pipeline and a preparation method thereof, and belongs to the field of drinking water conveying pipelines. The pipeline is of a four-layer composite structure, the outer layer is a 316L stainless steel pipe with the diameter being 1.2-3.0 mm, the middle layer is a food-grade epoxy resin layer with the diameter being 0.3-0.8 mm, the inner layer is a TP2 thin-wall copper pipe with the diameter being 0.5-1.5 mm, and the inner wall of the copper pipe is a 99.99% high-purity gold plating layer with the diameter being 0.001-0.002 mm. The preparation comprises six core processes, gold plating adopts an electroplating and chemical plating composite process, and parameters such as specific current density, plating solution temperature and the like are controlled. The designed service life of the pipeline is gt; 100 years later, sanitation and mechanical performance are excellent, the gold layer is firmly attached, the problems that a traditional pipeline is poor in corrosion resistance, and the gold layer is prone to falling off are solved, and the composite pipe is suitable for drinking water conveying scenes such as high-end residences and medical treatment.

A high-density multi-level interconnect device for harsh environment applications combines thin-film and thick-film processing technologies to achieve superior performance in extreme conditions. The device comprises an alumina substrate with a thin-film metal layer deposited via electron beam evaporation, including a 20 nm titanium adhesion layer and a 400 nm gold layer, followed by a screen-printed thick-film gold layer. The layers are annealed at 850° C. for 10 minutes to promote strong adhesion. This hybrid approach provides improved die shear strength and enhanced thermal cycling resistance. The interconnects are suitable for wide bandgap semiconductor devices operating at temperatures up to 500° C. in harsh environments including elevated temperature, high pressure, and acidic conditions.

The invention belongs to the technical field of lining gold removal, and discloses a lining gold removal device and a using method thereof.The lining gold removal device comprises a material carrying unit, a tin coating unit, a gold removal unit, a temperature control unit and a control unit; the tinning unit and the gold removing unit are arranged side by side and fixedly installed at the upper end of the control unit, the temperature control unit is arranged in the tinning unit and the gold removing unit, the material carrying unit is used for sending a photoelectric signal and determining a station of a machined part according to the photoelectric signal, and the tinning unit is used for coating tinning on the inner wall of the machined part. The gold removing unit is used for removing gold from a machined part, the material carrying unit is used for rapidly recognizing the station of the machined part through photoelectric signal positioning, and manual operation errors are reduced; the tinning unit and the gold removing unit are arranged above the control unit side by side, the temperature of a machining area is regulated and controlled through the temperature control unit, it is ensured that a tinning layer evenly covers the inner wall of a bush to improve the gold removing effect, the gold removing unit removes a gold layer through temperature-controllable melting, and the completeness of the surface of a machined workpiece is ensured.

In embodiments herein, a surface finish (SF) is formed on conductive contacts of a package substrate for connection to an embedded interconnect bridge circuit module die. In some embodiments, the SF may be electroless nickel plating and electroless palladium immersion gold (ENEPIG). In other embodiments, SF may be gold leaching electroless palladium leaching (IGEPIG). In other embodiments, the SF may include an electrolytic palladium gold layer on the indium layer or on the ferrocobalt layer.

The invention discloses a copper-nickel-gold multi-layer electroplating process in semiconductor packaging. The process mainly comprises the steps of substrate pretreatment (degreasing, micro-etching and activation), copper layer electroplating, low-stress nickel aminosulfonate barrier layer electroplating, nickel layer weak acid activation, thin gold layer electroplating and post-treatment. The core of the method is that the internal stress of the nickel layer and the thickness and compactness of the gold layer are accurately controlled, and interlayer activation treatment is optimized, so that high binding force, excellent weldability, excellent diffusion resistance and long-term reliability of the plating layer are realized, and meanwhile, the gold consumption and the production cost are remarkably reduced. The process is particularly suitable for semiconductor packaging components such as lead frames and packaging substrates.

The invention discloses a manufacturing method of an ultra-fine and ultra-thick gold film circuit, and relates to the technical field of PCBs, and the method comprises the following steps: S1, cleaning a substrate; s2, performing double-sided sputtering of a gold seed layer on the cleaned substrate to form a gold-plated sheet; s3, photoresist is sprayed on the gold-plated sheet in a photoresist spraying mode, and exposure and development are carried out; s4, carrying out stepped electroplating on the gold-plated sheet; s5, removing redundant metal regions on the front surface by using an etching means, and etching a cutting channel on the back surface; and S6, finally, cutting is conducted along the cutting channel, and a plurality of products can be obtained. According to the scheme, after thin gold is sputtered to serve as the seed layer, the photoresist pattern is manufactured on the gold-plated sheet in a glue spraying mode, and therefore the inductor product of the superfine and ultra-thick electrode with the line width meeting the requirement of 20 + / -3 microns and the gold layer thickness meeting the requirement of 10-12 microns is manufactured, and the manufactured film inductor series product can meet the high inductance value.

The disclosure is related to structures and methods of making thermoelectric devices. The methods may include preparing an electrically and thermally nonconductive substrate covered with gold-nickel-gold layers. In another step, cylindrical or frustum-shaped tunnels may be formed through the substrate and the gold-nickel-gold layers. Another step may include depositing a barrier layer on the walls of the tunnels that resists diffusion. N-type and p-type thermoelectric materials may be individually associated with and deposited on the barrier layers of the tunnels, and a metal layer may be deposited on the thermoelectric materials. The thermoelectric layers may be formed by combining alternating layers of thermoelectric materials and interlayers of phonon blocking materials. The method may include forming notches in the gold-nickel-gold layers to break electrical continuity. The method may also include a step of partially or fully capping the tunnels with sintered nano-silver or solder.