155 results about "Gold layer" patented technology

Aiming at the limitation of the existing metal bump corrosion prevention technology, the invention provides an innovative process: pure silver electroplating is adopted to form a bump main body, a complete gold wrapping structure is formed on all exposed surfaces of the bump main body through secondary electroplating of pure gold, and the process can be used for accurately regulating and controlling the parameters of the secondary electroplating and the size of a secondary photoetching pattern. The exposed surface of the silver bump is uniformly wrapped by the thin gold layer, so that the problem that metal interconnection is easy to corrode in a severe environment in the traditional technology is effectively solved, and comprehensive breakthrough in corrosion resistance, electrical properties and cost effectiveness is realized through innovative silver core and gold shell layered structure design and precise process control.

The invention provides a one-dimensional nano material with wave-absorbing performance as well as a preparation method and application of the one-dimensional nano material. The preparation method comprises the following steps: (1) sequentially carrying out heavy ion beam irradiation, ultraviolet light sensitization and chemical etching on a high polymer material template to obtain an etched template; (2) spraying metal on one side of the etching template to form a gold layer; and (3) electrochemical deposition is conducted on the side, not sprayed with metal, of the etching template obtained in the step (2), deposition liquid adopted in the electrochemical deposition is an aqueous solution containing TiF4 and CoCl2, and therefore the Co / TiO2 composite nanowire is generated. Through the preparation method, the Co / TiO2 composite wave-absorbing material which is arranged in parallel, high in impedance matching capability and excellent in microwave absorption performance can be obtained.

The present invention discloses an ultra-wideband, multi-frequency switchable terahertz absorber based on vanadium dioxide, belonging to the field of terahertz wave technology. The absorber comprises: an ultra-wideband, multi-frequency switchable terahertz absorber unit having a multi-layer structure, wherein, from top to bottom, a mutually bonded upper patterned VO2 layer, an upper SiO2 dielectric layer, a lower VO2 layer, an intermediate patterned gold layer, a lower SiO2 dielectric layer, and a bottom gold layer are sequentially arranged; the upper patterned VO2 layer is disc-shaped, with a square annular slit disposed within the disc; the intermediate patterned gold layer comprises an inner ring, an outer ring, and an open square ring, spaced from the inside out, with the opening of the open square ring disposed in the middle of each edge. The present invention is based on an ultra-wideband, multi-frequency switchable terahertz absorber based on vanadium dioxide. The designed absorber can achieve switching from ultra-wideband absorption to multi-frequency absorption by adjusting the conductivity of the vanadium dioxide through temperature control.

The invention provides a glass nanopore probe based on an aptamer and application of the glass nanopore probe in dopamine detection, and belongs to the technical field of electrochemical sensing and scanning probe microscopy. The sensor comprises: a glass nanopore probe, the inner wall of which is modified with a gold layer; a cDNA (complementary deoxyribonucleic acid) single chain is fixed on the gold layer through a gold-sulfur bond; a part of the sequence of the dopamine aptamer is hybridized and combined with the cDNA single chain; wherein the combination of the dopamine and the dopamine aptamer causes the change of an ion current rectification signal of the glass nanopore probe, so that the detection of the dopamine is realized based on the change of the ion current rectification signal of the glass nanopore probe. The invention provides a valuable scheme for developing an aptamer nanopore scanning electrochemical sensor for single cell analysis and researching neurotransmitter-related diseases.

This provides an improvement to the rewiring line structure of die packaging. [Solution] This invention provides an improvement to the redistribution line structure of die packaging, which mainly consists of one die, multiple redistribution lines, and multiple nickel-gold layers. Each redistribution line is formed on the surface of the die by being stretched horizontally using a redistribution layer (RDL) process. Each nickel-gold layer is formed on the surface of each redistribution line by being plated using a chemical nickel-gold (ENIG) process. Each nickel-gold layer consists of a nickel (Ni) layer and a gold (Au) layer, with the gold layer positioned on top of the nickel layer. This structure effectively solves the problems of uneven thickness and process complexity that occur in conventional die packaging when nickel-gold layers are formed using an electroplating process, and the RDL process can improve the design space and reliability of the die packaging.

The invention belongs to the technical field of preparation of SERS (Surface Enhanced Raman Scattering) substrates, and particularly relates to a preparation method of a tubular SERS substrate with a structured inner wall, which comprises the following steps: processing a plurality of upper through grooves side by side in a flat single crystal copper surface to form an upper substrate sheet; a plurality of lower through grooves completely matched with the upper through grooves in outline are symmetrically machined in the other flat single crystal copper surface, and a lower substrate sheet is formed; the surfaces, with the through grooves, of the upper substrate sheet and the lower substrate sheet are cleaned; spraying gold layers on the cleaned surfaces, with the through grooves, of the upper substrate sheet and the lower substrate sheet by using a multi-layer cold spraying method, and then performing polishing treatment by using a mechanical grinding process; and the upper substrate sheet and the lower substrate sheet are aligned and buckled, so that the upper through groove and the lower through groove are accurately butted, a micro-pipeline structure is formed, and the tubular SERS substrate structure is obtained. The detection laser utilization rate can be improved, and then the detection sensitivity and the detection signal intensity amplification factor are improved.

The invention discloses an anti-corrosion process for chemically plating nickel and gold on a gold-silver alloy or pure silver bump, which is characterized by comprising the following steps of: forming a metal bump structure on the surface of a substrate; performing patterning processing on the metal bump structure to form a metal bump of a target pattern; performing pretreatment on the metal bump, wherein the pretreatment comprises acid pickling, micro-etching, dilute nitric acid cleaning and deionized water rinsing; performing zinc replacement treatment on the pretreated metal bump for at least two times to activate the surface; the activated metal bump is placed in a chemical nickel plating solution for reaction, so that a continuous nickel metal layer is formed on the surface of the metal bump; after the nickel layer is formed, the nickel layer is further placed in a chemical gold plating solution for reaction, and a continuous metal gold layer is formed on the surface of the nickel layer; and rinsing and drying the gold-plated structure to obtain the metal bump structure with the anti-corrosion performance.

The application provides a relief embroidery gold picture and a processing method, which comprises the following steps: coating a gold layer on a substrate after stamping is completed; coating and solidifying a photocuring adhesive layer on the gold layer, and opening a first micropore with a diameter of 50-200 nanometers on the gold layer by laser penetration of the photocuring adhesive layer; placing the substrate with the first micropore opened on the photocuring adhesive layer and the gold layer in an electrolyte solution for electrolysis, so that an oxidation reaction occurs at the inner wall of each first micropore to generate a gold trioxide layer; taking out the substrate in the electrolyte solution, and spraying an organic pigment to the outer surface of the photocuring adhesive layer, so that the organic pigment penetrates into the first micropore and bonds with the gold trioxide layer on the inner wall of the first micropore to be adsorbed on the inner wall of the first micropore. The inner wall of the first micropore is subjected to electrolytic oxidation to form a gold trioxide layer, so that the organic pigment layer is adsorbed in the first micropore by bonding reaction, and the adsorption force is enhanced.

The invention relates to the technical field of materials for integrated circuits, in particular to a lanthanum target material and a preparation method thereof.The method comprises the steps that a micro-lubricating-oil-based cutting fluid is adopted for conducting tooth turning on the welding face of a lanthanum target blank, and then a back gold layer with the thickness of at least 0.5 micrometer is formed on the welding face in a sputtering plating mode; the rotating speed of the gear turning machining is 50-100 r / min, the feeding speed is 0.1-0.5 mm / r, and the cutting depth is 0.1-0.5 mm; the welding face of the back plate is subjected to tooth turning machining, and a back gold layer is plated on the welding face in a sputtering mode; and a middle layer is placed between the lanthanum target blank and the back gold layer of the back plate, vacuum diffusion welding is conducted for 1-4 h, and the lanthanum target material is subjected to aftertreatment. The problem of oxidation of the welding surface of the high-activity lanthanum target can be effectively solved, high-quality welding of the lanthanum target surface and the back plate is achieved, the welding rate and the welding strength of the target material are greatly improved, the surface of the target material is free of ablation marks, and the target material can be stored for a long time and better meets the requirements of a sputter coating process.

A gold-plated silver processing method and gold-plated silver products are disclosed, relating to the field of metal processing technology. The gold-plated silver processing method includes the following steps: S1, silver blank treatment, polishing the silver blank to remove surface impurities; S3, gold plating, applying a gold layer to the treated silver blank; S4, piercing the gold layer using a cone to create multiple vent holes; S5, pressing, applying pressure from one end of the product to the other to expel residual gas within the interlayer through the vent holes; S6, water leveling, heating and water leveling the surface of the gold layer to eliminate piercing marks; S7, wire drawing and bonding, using a wire drawing machine to draw the product to the desired outer diameter to ensure a tight bond between the gold layer and the silver blank. This technical solution has the advantages of eliminating air bubbles within the interlayer, enhancing the adhesion between gold and silver, and improving product quality.

A pressure-sensitive combination switch disclosed by the present invention comprises a pressure-sensitive switch main body composed of a circuit board, a pressure-sensitive sensor and a conductive elastic sheet, the pressure-sensitive sensor and the conductive elastic sheet are respectively arranged on two surfaces of the circuit board and are respectively connected with welding pins of the circuit board, the conductive elastic sheet is arched towards one side, and a gap between the circuit board and the conductive elastic sheet is formed between the circuit board and the conductive elastic sheet. The circuit gold layer comprises a first gold layer and a second gold layer, the first gold layer is located on the outer ring of the second gold layer, isolation is formed between the first gold layer and the second gold layer, the first gold layer makes contact with the edge of the conductive elastic piece, and the second gold layer corresponds to the arched part of the conductive elastic piece. The problems that in the prior art, pressure sensing and switch functions cannot be integrated into one device, so that the structure is complex, the machining difficulty is high, and the failure rate is high are solved.

The application discloses a preparation method and structure for reducing the capacitance of a laser chip, and the method comprises the following steps: forming a passivated Pad layer on a P surface bonding area of a passivation layer of the chip, wherein the Pad layer is a medium layer with low adhesion to a gold layer; manufacturing a P surface electrode on the chip, and part of the P surface electrode is located on the Pad layer; based on the low adhesion between the passivated Pad layer and the gold layer, when a gold wire is bonded with the P surface electrode, the gold wire pulls up the part of the P surface electrode located on the Pad layer, and the gold wire and the P surface electrode remain connected. By filling a medium layer with low adhesion to the gold layer in the P surface electrode bonding area, the P electrode layer is pulled up when the gold wire is bonded through the bonding process, which is equivalent to greatly reducing the metal area of the P surface electrode, so that the capacitance of the chip electrode is greatly reduced.

The invention discloses a multi-layer composite structure gold-plated inner layer drinking water conveying pipeline and a preparation method thereof, and belongs to the field of drinking water conveying pipelines. The pipeline is of a four-layer composite structure, the outer layer is a 316L stainless steel pipe with the diameter being 1.2-3.0 mm, the middle layer is a food-grade epoxy resin layer with the diameter being 0.3-0.8 mm, the inner layer is a TP2 thin-wall copper pipe with the diameter being 0.5-1.5 mm, and the inner wall of the copper pipe is a 99.99% high-purity gold plating layer with the diameter being 0.001-0.002 mm. The preparation comprises six core processes, gold plating adopts an electroplating and chemical plating composite process, and parameters such as specific current density, plating solution temperature and the like are controlled. The designed service life of the pipeline is gt; 100 years later, sanitation and mechanical performance are excellent, the gold layer is firmly attached, the problems that a traditional pipeline is poor in corrosion resistance, and the gold layer is prone to falling off are solved, and the composite pipe is suitable for drinking water conveying scenes such as high-end residences and medical treatment.

A high-density multi-level interconnect device for harsh environment applications combines thin-film and thick-film processing technologies to achieve superior performance in extreme conditions. The device comprises an alumina substrate with a thin-film metal layer deposited via electron beam evaporation, including a 20 nm titanium adhesion layer and a 400 nm gold layer, followed by a screen-printed thick-film gold layer. The layers are annealed at 850° C. for 10 minutes to promote strong adhesion. This hybrid approach provides improved die shear strength and enhanced thermal cycling resistance. The interconnects are suitable for wide bandgap semiconductor devices operating at temperatures up to 500° C. in harsh environments including elevated temperature, high pressure, and acidic conditions.

The invention belongs to the technical field of lining gold removal, and discloses a lining gold removal device and a using method thereof.The lining gold removal device comprises a material carrying unit, a tin coating unit, a gold removal unit, a temperature control unit and a control unit; the tinning unit and the gold removing unit are arranged side by side and fixedly installed at the upper end of the control unit, the temperature control unit is arranged in the tinning unit and the gold removing unit, the material carrying unit is used for sending a photoelectric signal and determining a station of a machined part according to the photoelectric signal, and the tinning unit is used for coating tinning on the inner wall of the machined part. The gold removing unit is used for removing gold from a machined part, the material carrying unit is used for rapidly recognizing the station of the machined part through photoelectric signal positioning, and manual operation errors are reduced; the tinning unit and the gold removing unit are arranged above the control unit side by side, the temperature of a machining area is regulated and controlled through the temperature control unit, it is ensured that a tinning layer evenly covers the inner wall of a bush to improve the gold removing effect, the gold removing unit removes a gold layer through temperature-controllable melting, and the completeness of the surface of a machined workpiece is ensured.

In embodiments herein, a surface finish (SF) is formed on conductive contacts of a package substrate for connection to an embedded interconnect bridge circuit module die. In some embodiments, the SF may be electroless nickel plating and electroless palladium immersion gold (ENEPIG). In other embodiments, SF may be gold leaching electroless palladium leaching (IGEPIG). In other embodiments, the SF may include an electrolytic palladium gold layer on the indium layer or on the ferrocobalt layer.

The invention discloses a copper-nickel-gold multi-layer electroplating process in semiconductor packaging. The process mainly comprises the steps of substrate pretreatment (degreasing, micro-etching and activation), copper layer electroplating, low-stress nickel aminosulfonate barrier layer electroplating, nickel layer weak acid activation, thin gold layer electroplating and post-treatment. The core of the method is that the internal stress of the nickel layer and the thickness and compactness of the gold layer are accurately controlled, and interlayer activation treatment is optimized, so that high binding force, excellent weldability, excellent diffusion resistance and long-term reliability of the plating layer are realized, and meanwhile, the gold consumption and the production cost are remarkably reduced. The process is particularly suitable for semiconductor packaging components such as lead frames and packaging substrates.

The invention discloses a manufacturing method of an ultra-fine and ultra-thick gold film circuit, and relates to the technical field of PCBs, and the method comprises the following steps: S1, cleaning a substrate; s2, performing double-sided sputtering of a gold seed layer on the cleaned substrate to form a gold-plated sheet; s3, photoresist is sprayed on the gold-plated sheet in a photoresist spraying mode, and exposure and development are carried out; s4, carrying out stepped electroplating on the gold-plated sheet; s5, removing redundant metal regions on the front surface by using an etching means, and etching a cutting channel on the back surface; and S6, finally, cutting is conducted along the cutting channel, and a plurality of products can be obtained. According to the scheme, after thin gold is sputtered to serve as the seed layer, the photoresist pattern is manufactured on the gold-plated sheet in a glue spraying mode, and therefore the inductor product of the superfine and ultra-thick electrode with the line width meeting the requirement of 20 + / -3 microns and the gold layer thickness meeting the requirement of 10-12 microns is manufactured, and the manufactured film inductor series product can meet the high inductance value.

The disclosure is related to structures and methods of making thermoelectric devices. The methods may include preparing an electrically and thermally nonconductive substrate covered with gold-nickel-gold layers. In another step, cylindrical or frustum-shaped tunnels may be formed through the substrate and the gold-nickel-gold layers. Another step may include depositing a barrier layer on the walls of the tunnels that resists diffusion. N-type and p-type thermoelectric materials may be individually associated with and deposited on the barrier layers of the tunnels, and a metal layer may be deposited on the thermoelectric materials. The thermoelectric layers may be formed by combining alternating layers of thermoelectric materials and interlayers of phonon blocking materials. The method may include forming notches in the gold-nickel-gold layers to break electrical continuity. The method may also include a step of partially or fully capping the tunnels with sintered nano-silver or solder.

The application discloses a reflective terahertz metasurface sensor, a biochemical detection system and application, and the sensor comprises a resonance unit with a preset period length, and the resonance unit comprises, from top to bottom, a first gold layer, a first chromium layer, a polyimide material layer, a second gold layer, a second chromium layer and a silicon dioxide material layer; wherein the width and length of the first gold layer have a preset ratio, the first gold layer and the second gold layer have a first preset thickness, and the polyimide material layer has a second preset thickness, and the application has the advantages of improved detection precision, effective differential detection of trace biochemical samples and the like.

The application discloses a preparation method of a SERS label with Fabry-Perot optical cavity and localized surface plasmon resonance coupling effect, which comprises the following steps: depositing a copper film on the surface of a polymethyl methacrylate (PMMA) film by using a thermal evaporation technology, generating copper oxide nano spicules by reacting with a sodium hypochlorite solution, depositing silver nanoparticles on the surface of the copper oxide spicules by using a magnetron sputtering technology, and re-depositing a gold layer by using the thermal evaporation technology, so as to obtain a gold@silver nanoparticle / copper oxide spicule / PMMA flexible SERS substrate; and then the substrate is folded, heated and pressed to obtain the SERS label with Fabry-Perot optical cavity and localized surface plasmon resonance coupling effect. The SERS label provided by the application comprehensively integrates capillary action, Fabry-Perot optical cavity and localized surface plasmon resonance, effectively excites a high-intensity and large-volume hotspot, and makes trace biomarkers in a complex solution more easily captured by the large-volume hotspot, so that the in-situ SERS detection performance is improved.

The application discloses a manufacturing method of a thin-wall gold cavity with a special-shaped slot hole, and comprises the following steps: a subtractive manufacturing method and an additive manufacturing method are combined, a mandrel is processed by using a subtractive process, a polymer transition layer is grown by using a polymer 3D printing additive process, a gold layer is prepared by using a chemical electroplating or sputtering process, the excess polymer transition layer and the gold layer are removed by using a subtractive process, and finally, the polymer transition layer and the mandrel material are removed by using physical and chemical methods, so that the thin-wall gold cavity with the special-shaped slot hole structure can be obtained, and the demand of physical experiments in the field of inertial confinement fusion on the thin-wall gold cavity part with the special-shaped slot hole structure is met. The manufacturing method of the thin-wall gold cavity with the special-shaped slot hole can obtain the thin-wall gold cavity with the special-shaped slot hole structure with a minimum scale, has the advantages of a wider processing scale, no limitation on the structure by the subtractive manufacturing process and high processing efficiency of the transition layer compared with the method for manufacturing the slot hole or the transition layer by using the traditional subtractive method, and the minimum slot hole size is less than 5 microns.

This application provides a method for fabricating an LED chip and the LED chip itself. The method includes: providing a substrate, forming an epitaxial structure on the substrate, and forming a P-electrode and an N-electrode on the epitaxial structure. Forming the P-electrode includes: forming a first gold layer at a first evaporation rate, forming a second gold layer at a second evaporation rate, and forming a third gold layer at a third evaporation rate. Forming the N-electrode includes: forming a fourth gold layer at a first evaporation rate, forming a fifth gold layer at a second evaporation rate, and forming a sixth gold layer at a third evaporation rate. The second evaporation rate is greater than or less than the first and third evaporation rates, so that the pores of adjacent gold layers in the P-electrode and N-electrode are staggered, thereby suppressing the presence of pores penetrating the entire gold layer in the gold layers of the P-electrode and N-electrode as much as possible, reducing the possibility of chloride ions entering the electrode interior in a salt spray environment, and improving the reliability of the LED chip in a salt spray environment.

The invention discloses a method for growing phosphorene on a non-metal substrate, which is characterized in that a molecular beam epitaxy technology is adopted, indium phosphide is used as a precursor in a high vacuum environment, phosphorene is grown on an epitaxial growth silicon substrate, and the precise control on the phosphorene growth process is realized. The method comprises the following steps: depositing a gold layer on the surface of freshly stripped mica, and carrying out ion cleaning and annealing treatment to obtain a clean Au (111) surface; growing a silicon layer on the surface of the processed Au (111) by taking monocrystalline silicon as a silicon source under an ultrahigh vacuum condition; growing a phosphorus layer on the Au (111) substrate on which the silicon layer is deposited by taking indium phosphide crystals as a phosphorus source under an ultrahigh vacuum condition; and carrying out annealing treatment on the obtained sample, and analyzing and characterizing the sample through Auger electron spectroscopy and a scanning tunneling microscope. The method can effectively break through the limitation that phosphorene is difficult to prepare under the condition of a non-metal substrate in the existing preparation means, and is expected to promote the application of phosphorene in the field of electronic devices.

This invention discloses a method for electroplating soft gold onto a circuit board, and also discloses the circuit board. The method includes the following steps: S1: Obtaining a circuit board with a copper layer on its surface; S2: Electroplating a nickel layer on the surface of the copper layer, wherein the surface of the nickel layer has gold bonding lines and non-gold bonding lines; S3: Forming multiple arrayed and spaced bump structures in the gold bonding lines, each bump structure including a nickel substrate and a gold surface layer disposed on the surface of the nickel substrate; S4: Electroplating the circuit board with gold to form a first gold layer on the gold bonding lines and a second gold layer on the non-gold bonding lines, wherein the thickness of the first gold layer is greater than the thickness of the second gold layer. In this way, selective thickening of the gold bonding lines is achieved during the gold plating process, ensuring that the gold bonding lines have a sufficiently thick gold layer to guarantee the reliability of the gold bonding lines, while the non-gold bonding lines maintain a relatively thin gold layer, which can reduce the amount of gold used and lower the production cost of the circuit board.

The application discloses a compact double-core photonic crystal fiber polarization beam splitter based on gold layer tuning and belongs to the technical field of optical communication systems. The technical problems that the existing polarization beam splitter cannot consider high extinction ratio and device size are solved. The technical scheme is as follows: the photonic crystal fiber polarization beam splitter comprises a base material, a core area and a cladding area arranged on the base material, the cladding area comprises a plurality of small circular air holes, two large circular air holes and four elliptical air holes, the core area comprises a central elliptical air hole with an inner wall attached with a gold layer and two cores, and the two cores are formed by two regions with two continuous air holes missing. The photonic crystal fiber polarization beam splitter has the advantages of short length and high extinction ratio, the length is only 0.122 mm, the maximum extinction ratio is -65 dB, and the operation bandwidth reaches 100 nm.

The application discloses an interconnection method of isolated electrodes, comprising the following steps: using benzocyclobutene resin to preliminarily fill an isolated groove of a chip with an electric isolation structure; performing first coating of metal stripping glue and photoresist on the wafer surface of the chip and the preliminarily filled isolated groove; opening the electrode window to be thickened on the chip surface, covering the first metal layer on the surface of the whole wafer by first thin gold sputtering; performing second coating of the metal stripping glue and the photoresist; opening the electrode window to be thickened on the chip surface by photoetching technology, covering the second metal layer on the wafer surface by second thin gold sputtering; electroplating the wafer covered with the second metal layer; and placing the electroplated chip in an organic solvent to strip the gold layer, and removing the metal layer formed after sputtering and electroplating in other functional areas. The application solves the technical problem that the electroplating process cannot cross the electric isolation structure, and can effectively guarantee the reliability and conductivity of the electrode connection.

The invention discloses a tin coating protective agent and a local gold removing and tin coating process for a multi-row high-density pin connector. The tin coating protective agent is prepared from the following components in parts by mass: 40 to 50 parts of waterborne acrylic emulsion, 10 to 20 parts of organic silicon resin, 0.5 to 2 parts of fumed silica, 0.1 to 0.5 part of defoaming agent, 5 to 10 parts of filler, 0.1 to 1 part of flatting agent, 0.1 to 0.5 part of thickening agent, 1 to 5 parts of melamine cyanurate and 1 to 3 parts of cellulose ether. The multi-row high-density pin connector local gold removing and tin coating process comprises the following steps that S1, the protective agent is applied to a non-tin coating part needing to be protected, and curing is carried out to form a protective film; s2, immersing the pin part which needs to be subjected to gold removal and tin coating into a tin pot, removing a gold layer and forming a uniform tin layer; s3, carrying out repair welding treatment on the tin-connected pins; s4, removing the applied protective agent; through the process, unnecessary part tinning is avoided.

A substrate including a base including a primary surface, a conductive member disposed on the primary surface. and a covering member. The conductive member includes a first portion including a first conductive layer and an aluminum layer layered in order from a bottom of the conductive member, a second portion including a gold layer on an uppermost surface of the second portion of the conductive member, and a third portion including the gold layer, the first conductive layer, and the aluminum layer layered in order from the bottom of the conductive member. The covering member covers a first boundary, which is a boundary between the first portion and the third portion, and a second boundary, which is a boundary between the second portion and the third portion.

The application discloses an insulating circuit board, which comprises a bottom plate, a metal layer and a pre-plated solder layer arranged in sequence from inside to outside, the metal layer comprises a palladium layer and a gold layer, the palladium layer is arranged on the side close to the bottom plate, the gold layer is arranged on the side close to the pre-plated solder layer, the thickness of the palladium layer is 0.05-1 mu m, and the thickness of the gold layer is 0.05-2 mu m. The insulating circuit board provided by the application is favorable for reducing the risk of mutual migration of nickel elements and gold elements, avoiding the generation of 'black nickel' or 'black pad' in the insulating circuit board, and further improving the quality of the insulating circuit board. On the other hand, the application provides an insulating circuit board and an electronic device, which are favorable for reducing the production cost, enhancing the use stability and service life, increasing the economic benefits, and further widening the application scenarios of the insulating circuit board.