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Sensors using high electron mobility transistors

a high electron mobility, transistor technology, applied in semiconductor devices, instruments, material electrochemical variables, etc., can solve the problems of limiting the frequency of screening, high patient cost, and invasive radiation, and achieve the effect of facilitating rapid analysis of results

Inactive Publication Date: 2010-07-29
UNIV OF FLORIDA RES FOUNDATION INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a sensors that use AlGaN / GaN HEMTs to detect various molecules, including biomarkers, in bodily fluid samples. The sensors can wirelessly transmit results and are functionalized with different capture reagents to detect different molecules. The patent provides a solution for detecting breast cancer, heavy metals, changes in pH, prostate cancer, acute kidney injury or renal failure, and glucose in exhaled breath condensate. The patent also provides normalized detection for accurate detection of molecules.

Problems solved by technology

However, these methods vary significantly in sensitivity.
This procedure involves a high cost to the patient.
Moreover, the use of invasive radiation limits the frequency of screening.
However, currently saliva samples are typically obtained from a patient in a dentist's office then sent to a testing lab; it typically takes a few days to get the test results.

Method used

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Examples

Experimental program
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Effect test

example 1

Selective Detection of Hg(II) Ions from Cu(II) and Pb(II)

[0088]Hg2+ and Cu2+ ions are easily detected with sensors fabricated with Au-gated and thioglycolic acid functionalized Au-gated GaN / AlGaN HEMTs.

[0089]The HEMT structures consisted of a 2 μm thick undoped GaN buffer and 250 Å thick undoped Al0.25Ga0.75N cap layer. The epi-layers were grown by molecular beam epitaxy system on 2″ sapphire substrates at SVT Associates. Mesa isolation was performed with an Inductively Coupled Plasma (ICP) etching with Cl2 / Ar based discharges at −90 V dc self-bias, ICP power of 300 W at 2 MHz, and a process pressure of 5 mTorr. Ohmic contacts of 50×50 μm2 separated with gaps of 10, 20, and 50 μm were formed by e-beam deposition of Ti / Al / Pt / Au patterns by lift-off and annealed at 850° C. for 45 sec under flowing N2 for source and drain metal contacts. A 5-nm thin gold film was deposited as the gate metal for two sets of sample sensors. One sensor had a bare Au-gate and the other sensor had an Au-gat...

example 2

Detection of Prostate Specific Antigen

[0097]Functionalized of Au-gated AlGaN / GaN HEMTs of the invention were used to detect prostate specific antigen (PSA). The PSA was specifically recognized through PSA antibody, anchored to the gate area in the form of carboxylate succinimidyl ester. A wide range of concentrations from to 1 μg / ml to 10 pg / ml of PSA was investigated, which is lower than the cut-off value of 2.5 ng / ml that is used as an indication for the need of biopsy.

[0098]The HEMT structures consisted of a 3 μm thick undoped GaN buffer, a 30 Å thick Al0.3Ga0.7N spacer, and a 220 Å thick Si-doped Al0.3Ga0.7N cap layer. Epi-layers were grown by rf plasma-assisted Molecular Beam Epitaxy on the thick GaN buffers produced on sapphire substrates by metal organic chemical vapor deposition (MOCVD). Mesa isolation was performed with an Inductively Coupled Plasma (ICP) etching with Cl2 / Ar based discharges at −90 V dc self-bias, ICP power of 300 W at 2 MHz, and a process pressure of 5 mTo...

example 3

Detection of Changes in pH in Electrolyte Solutions

[0105]A Sc2O3 gate dielectric on AlGaN / GaN HEMTs is shown to provide high sensitivity for detecting changes in pH of electrolyte solutions, and is superior to the use of native oxide in the gate region.

[0106]The HEMT structures consisted of a 2 μm thick undoped GaN buffer and 250 Å thick undoped Al0.25Ga0.75N cap layer. The epi-layers were grown by Metal-Organic Chemical Vapor Deposition on 100 mm (111) Si substrates at Nitronex Corporation. The sheet carrier concentration was ˜1×1013 cm−2 with a mobility of 980 cm2 / V-s at room temperature. Mesa isolation was achieved by using an ICP system with Ar / Cl2 based discharges. Ohmic contacts of 50×50 μm2 separated with gaps of 10, 20, and 50 μm were formed by lift-off of e-beam deposited Ti(200 Å) / Al(800 Å) / Pt(400 Å) / Au(800 Å). The contacts were annealed at 850° C. for 45 sec under a flowing N2 ambient in a Heatpulse 610T system. A 100 Å Sc2O3 layer was deposited as a gate dielectric throu...

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Abstract

Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation-in-part of International Patent Application No. PCT / US2008 / 076885, filed Sep. 18, 2008, which claims the benefit of U.S. Provisional Application Ser. No. 60 / 973,302, filed Sep. 18, 2007, U.S. Provisional Application Ser. No. 60 / 975,907, filed Sep. 28, 2007, and U.S. Provisional Application Ser. No. 60 / 982,310, filed Oct. 24, 2007, all of which are hereby incorporated by reference herein in their entirety, including any figures, tables, or drawings.BACKGROUND OF THE INVENTION[0002]Chemical sensors can be used to analyze a wide variety of environmental and bodily gases, aerosols, and fluids for properties of interest. For example, exhaled breath condensate (EBC) is widely known to be a diagnostically important bodily fluid that can be safely collected. In particular, the breath from deep within the lungs (alveolar gas) is in equilibrium with the blood, and therefore the concentrations of molecules present ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G01N27/26H01L29/778
CPCG01N33/0045H01L29/2003G01N27/4145G01N33/54306H01L29/7787
Inventor REN, FANPEARTON, STEPHEN JOHNLELE, TANMAYWANG, HUNG-TAKANG, BYOUNG-SAM
Owner UNIV OF FLORIDA RES FOUNDATION INC
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