The invention discloses a chemical nickel-gold process of a wafer aluminum-copper base material applied to the field of IGBT power devices. The chemical nickel-gold process comprises a process flow, an activating solution formula, a chemical nickel formula, a chemical gold formula and the like. The technological process comprises the steps of oil removal, water washing, micro-etching, water washing, presoaking, activation, water washing, vacuum water washing, dry ice spray washing, thin copper electroplating, water washing, chemical nickel plating, water washing and chemical gold plating. The formula of the activating solution comprises ruthenium salt, platinum salt, concentrated sulfuric acid, a surfactant, a stabilizer, a complexing agent and a dispersing agent. The nickel plating formula comprises nickel salt, a complexing agent, a brightening agent, a reducing agent, a stabilizing agent, a bridging agent and a carrying agent. The gold plating formula comprises gold salt, a complexing agent, a stabilizing agent, an underpotential agent, a reducing agent and a nucleating agent. The excellent chemical nickel-gold plating process of the wafer aluminum-copper base material in the field of IGBT power devices can be realized, and the chemical nickel-gold plating process has the characteristics of being excellent in stability, bright and smooth, free of skip plating and diffusion plating, good in oxidation resistance, good in weldability and the like.